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IS93C46B-3GRI

EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, SOIC-8

器件类别：存储    存储   

厂商名称：Integrated Silicon Solution ( ISSI )

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Integrated Silicon Solution ( ISSI )
零件包装代码
SOIC
包装说明
0.150 INCH, SOIC-8
针数
8
Reach Compliance Code
unknown
ECCN代码
EAR99
最大时钟频率 (fCLK)
1 MHz
数据保留时间-最小值
40
耐久性
1000000 Write/Erase Cycles
JESD-30 代码
R-PDSO-G8
JESD-609代码
e0
长度
4.9 mm
内存密度
1024 bit
内存集成电路类型
EEPROM
内存宽度
16
湿度敏感等级
3
功能数量
1
端子数量
8
字数
64 words
字数代码
64
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
64X16
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP8,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
并行/串行
SERIAL
峰值回流温度（摄氏度）
NOT SPECIFIED
电源
3/5 V
认证状态
Not Qualified
座面最大高度
1.73 mm
串行总线类型
MICROWIRE
最大待机电流
0.000002 A
最大压摆率
0.003 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
2.5 V
标称供电电压 (Vsup)
2.7 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
3.9 mm
最长写入周期时间 (tWC)
10 ms
写保护
SOFTWARE
文档预览
IS93C46B
1,024-BIT SERIAL ELECTRICALLY
ERASABLE PROM
FEATURES
• Industry-standard Microwire Interface
— Non-volatile data storage
— Low voltage operation:
Vcc = 2.5V to 5.5V
— Full TTL compatible inputs and outputs
— Auto increment for efficient data dump
• x16 bit organization
• Hardware and software write protection
— Defaults to write-disabled state at power-up
— Software instructions for write-enable/disable
• Enhanced low voltage CMOS E
2
PROM
technology
• Versatile, easy-to-use Interface
— Self-timed programming cycle
— Automatic erase-before-write
— Programming status indicator
— Word and chip erasable
— Chip select enables power savings
• Durable and reliable
— 40-year data retention after 1M write cycles
— 1 million write cycles
— Unlimited read cycles
— Schmitt-trigger inputs
• Industrial and Automotive Temperature Grade
ISSI
JULY 2003
DESCRIPTION
®
The IS93C46B is a low-cost 1kb non-volatile,
ISSI
®
serial EEPROM. It is fabricated using an
enhanced CMOS design and process. The
IS93C46B contains power-efficient read/write
memory, and organization of 64 words of 16 bits.
The IS93C46B is fully backward compatible with
IS93C46.
An instruction set defines the operation of the
devices, including read, write, and mode-enable
functions. To protect against inadvertent data
modification, all erase and write instructions are
accepted only while the device is write-enabled. A
selected x16 word can be modified with a single
WRITE or ERASE instruction. Additionally, the
two instructions WRITE ALL or ERASE ALL can
program the entire array. Once a device begins
its self-timed program procedure, the data out pin
(Dout) can indicate the READY/BUSY status by
raising chip select (CS). The self-timed write cycle
includes an automatic erase-before-write
capability. The device can output any number of
consecutive words using a single READ
instruction.
FUNCTIONAL BLOCK DIAGRAM
DUMMY
BIT
R/W
AMPS
INSTRUCTION
DECODE,
CONTROL,
AND
CLOCK
GENERATION
ADDRESS
REGISTER
ADDRESS
DECODER
EEPROM
ARRAY
64x16
DATA
REGISTER
D
IN
INSTRUCTION
REGISTER
D
OUT
CS
SK
WRITE
ENABLE
HIGH VOLTAGE
GENERATOR
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
07/23/03
1
IS93C46B
ISSI
8-Pin JEDEC SOIC “G”
VCC
NC
NC
GND
®
PIN CONFIGURATIONS
8-Pin DIP, 8-Pin TSSOP
CS
SK
D
IN
D
OUT
1
2
3
4
8
7
6
5
8-Pin JEDEC SOIC “GR”
NC
GND
D
OUT
D
IN
NC
VCC
CS
SK
1
2
3
4
8
7
6
5
CS
SK
D
IN
D
OUT
1
2
3
4
8
7
6
5
VCC
NC
NC
GND
(Rotated)
PIN DESCRIPTIONS
CS
SK
D
IN
D
OUT
NC
Vcc
GND
Chip Select
Serial Data Clock
Serial Data Input
Serial Data Output
Not Connected
Power
Ground
instruction begins with a start bit of the logical “1” or
HIGH. Following this are the opcode (2 bits),
address field (6 bits), and data, if appropriate. The
clock signal may be held stable at any moment to
suspend the device at its last state, allowing clock-
speed flexibility. Upon completion of bus
communication, CS would be pulled LOW. The device
then would enter Standby mode if no internal
programming is underway.
Read (READ)
The READ instruction is the only instruction that outputs
serial data on the D
OUT
pin. After the read instruction and
address have been decoded, data is transferred from the
selected memory register into a serial shift register. (Please
note that one logical “0” bit precedes the actual 16-bit
output data string.) The output on D
OUT
changes during the
low-to-high transitions of SK (see Figure 3).
Applications
The IS93C46B is very popular in many high-volume
applications which require low-power, low-density
storage. Applications using this device include
industrial controls, networking, and numerous other
consumer electronics.
Low Voltage Read
The IS93C46B has been designed to ensure that data
read operations are reliable in low voltage environments.
They provide accurate operation with Vcc as low as 2.5V.
Endurance and Data Retention
The IS93C46B is designed for applications requiring up to
1M programming cycles (WRITE, WRALL, ERASE and
ERAL). It provides 40 years of secure data retention without
power after the execution of 1M programming cycles.
Auto Increment Read Operations
In the interest of memory transfer operation applications,
the IS93C46B has been designed to output a continuous
stream of memory content in response to a single read
operation instruction. To utilize this function, the system
asserts a read instruction specifying a start location ad-
dress. Once the 16 bits of the addressed register have
been clocked out, the data in consecutively higher address
locations is output. The address will wrap around continu-
ously with CS HIGH until the chip select (CS) control pin is
brought LOW. This allows for single instruction data dumps
to be executed with a minimum of firmware overhead.
Device Operations
The IS93C46B is controlled by a set of instructions
which are clocked-in serially on the Din pin. Before
each low-to-high transition of the clock (SK), the CS pin
must have already been raised to HIGH, and the Din
value must be stable at either LOW or HIGH. Each
2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
07/23/03
IS93C46B
ISSI
Write All (WRALL)
®
Write Enable (WEN)
The write enable (WEN) instruction must be executed
before any device programming (WRITE, WRALL,
ERASE, and ERAL) can be done. When Vcc is applied,
this device powers up in the write disabled state. The
device then remains in a write disabled state until a WEN
instruction is executed. Thereafter, the device remains
enabled until a WDS instruction is executed or until Vcc
is removed. (See Figure 4.) (Note: Chip select must
remain LOW until Vcc reaches its operational value.)
The write all (WRALL) instruction programs all registers
with the data pattern specified in the instruction. As with the
WRITE instruction, the falling edge of CS must occur to
initiate the self-timed programming cycle. If CS is then
brought HIGH after a minimum wait of 250 ns (t
CS
), the
D
OUT
pin indicates the READY/BUSY status of the chip (see
Figure 6).
Write Disable (WDS)
The write disable (WDS) instruction disables all programming
capabilities. This protects the entire device against acci-
dental modification of data until a WEN instruction is
executed. (When Vcc is applied, this part powers up in the
write disabled state.) To protect data, a WDS instruction
should be executed upon completion of each programming
operation.
Write (WRITE)
The WRITE instruction includes 16 bits of data to be
written into the specified register. After the last data bit
has been applied to D
IN
, and before the next rising edge
of SK, CS must be brought LOW. If the device is write-
enabled, then the falling edge of CS initiates the self-
timed programming cycle (see WEN).
If CS is brought HIGH, after a minimum wait of 250 ns (5V
operation) after the falling edge of CS (t
CS
) D
OUT
will
indicate the READY/BUSY status of the chip. Logical “0”
means programming is still in progress; logical “1” means
the selected register has been written, and the part is
ready for another instruction (see Figure 5). The READY/
BUSY
status will not be available if: a) The CS input goes
HIGH after the end of the self-timed programming cycle,
t
WP
; or b) Simultaneously CS is HIGH, Din is HIGH, and
SK goes HIGH, which clears the status flag.
Erase Register (ERASE)
After the erase instruction is entered, CS must be brought
LOW. The falling edge of CS initiates the self-timed internal
programming cycle. Bringing CS HIGH after a minimum of
t
CS
, will cause D
OUT
to indicate the READ/BUSY status of the
chip: a logical “0” indicates programming is still in progress;
a logical “1” indicates the erase cycle is complete and the
part is ready for another instruction (see Figure 8).
Erase All (ERAL)
Full chip erase is provided for ease of programming. Erasing
the entire chip involves setting all bits in the entire memory
array to a logical “1” (see Figure 9).
INSTRUCTION SET - IS93C46B
16-bit Organization
Address
(1)
Input Data
(A
5
-A
0
)
11xxxx
(A
5
-A
0
)
01xxxx
00xxxx
(A
5
-A
0
)
10xxxx
—
—
(D
15
-D
0
)
(2)
(D
15
-D
0
)
(2)
—
—
—
Instruction
READ
WEN
(Write Enable)
WRITE
Start Bit
1
1
1
1
1
1
1
OP Code
10
00
01
00
00
11
00
WRALL
(Write All Registers)
WDS
(Write Disable)
ERASE
ERAL (
Erase All Registers)
Notes:
1. x = Don't care bit.
2. If input data is not 16 bits exactly, the last 16 bits will be taken as input data.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
07/23/03
3
IS93C46B
ISSI
Value
–0.3 to +6.5
–40 to +85
–40 to +125
–65 to +150
Unit
V
°C
°C
°C
®
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
GND
T
BIAS
T
BIAS
T
STG
Parameter
Voltage with Respect to GND
Temperature Under Bias (Industrial)
Temperature Under Bias (Automotive)
Storage Temperature
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
OPERATING RANGE
Range
Commercial
Industrial
Automotive
Ambient Temperature
0°C to +70°C
–40°C to +85°C
–40°C to +125°C
V
CC
2.5V to 5.5V
2.5V to 5.5V
2.7V to 5.5V or 4.5V to 5.5V
CAPACITANCE
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
5
5
Unit
pF
pF
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
07/23/03
IS93C46B
ISSI
Test Conditions
I
OL
= 100 µA
I
OL
= 2.1 mA
I
OH
= –100 µA
I
OH
= –400 µA
Vcc
2.5V to 5.5V
4.5V to 5.5V
2.5V to 5.5V
4.5V to 5.5V
2.5V to 5.5V
4.5V to 5.5V
2.5V to 5.5V
4.5V to 5.5V
V
IN
= 0V to V
CC
(CS, SK,D
IN
,ORG)
V
OUT
= 0V to V
CC
, CS = 0V
Min.
—
—
V
CC
– 0.2
2.4
0.7
X
V
CC
0.7
X
V
CC
–0.3
–0.3
0
0
Max.
0.2
0.4
—
—
V
CC
+1
V
CC
+1
0.2
X
V
CC
0.8
2.5
2.5
®
DC ELECTRICAL CHARACTERISTICS
T
A
= 0°C to +70°C for Commercial, –40°C to +85°C for Industrial, and –40°C to +125°C for Automotive.
Symbol Parameter
V
OL
V
OL1
V
OH
V
OH1
V
IH
V
IL
I
LI
I
LO
Notes:
Automotive grade devices in this table are tested with Vcc = 2.7V to 5.5V and 4.5V to 5.5V.
Unit
V
V
V
V
V
V
µA
µA
Output LOW Voltage
Output LOW Voltage
Output HIGH Voltage
Output HIGH Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
07/23/03
5
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参数对比
与IS93C46B-3GRI相近的元器件有：IS93C46B-3GI、IS93C46B-3G、IS93C46B-3Z、IS93C46B-3ZI、IS93C46B-3P、IS93C46B-3GRA、IS93C46B-3GR、IS93C46B-3PA、IS93C46B-3PI。描述及对比如下：
型号 IS93C46B-3GRI IS93C46B-3GI IS93C46B-3G IS93C46B-3Z IS93C46B-3ZI IS93C46B-3P IS93C46B-3GRA IS93C46B-3GR IS93C46B-3PA IS93C46B-3PI
描述 EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, SOIC-8 EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, SOIC-8 EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, SOIC-8 EEPROM, 64X16, Serial, CMOS, PDSO8, 0.169 INCH, MO-153, TSSOP-8 EEPROM, 64X16, Serial, CMOS, PDSO8, 0.169 INCH, MO-153, TSSOP-8 EEPROM, 64X16, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8 EEPROM, 64X16, Serial, CMOS, PDSO8, SOIC-8 EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, SOIC-8 EEPROM, 64X16, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8 EEPROM, 64X16, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8
是否无铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
零件包装代码 SOIC SOIC SOIC TSSOP TSSOP DIP SOIC SOIC DIP DIP
包装说明 0.150 INCH, SOIC-8 0.150 INCH, SOIC-8 0.150 INCH, SOIC-8 0.169 INCH, MO-153, TSSOP-8 0.169 INCH, MO-153, TSSOP-8 0.300 INCH, PLASTIC, DIP-8 SOIC-8 0.150 INCH, SOIC-8 0.300 INCH, PLASTIC, DIP-8 0.300 INCH, PLASTIC, DIP-8
针数 8 8 8 8 8 8 8 8 8 8
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknow unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最大时钟频率 (fCLK) 1 MHz 1 MHz 1 MHz 1 MHz 1 MHz 1 MHz 1 MHz 1 MHz 1 MHz 1 MHz
数据保留时间-最小值 40 40 40 40 40 40 40 40 40 40
耐久性 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDIP-T8 R-PDSO-G8 R-PDSO-G8 R-PDIP-T8 R-PDIP-T8
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0 e0 e0
长度 4.9 mm 4.9 mm 4.9 mm 4.4 mm 4.4 mm 9.325 mm 4.9 mm 4.9 mm 9.3218 mm 9.325 mm
内存密度 1024 bit 1024 bit 1024 bit 1024 bit 1024 bit 1024 bit 1024 bit 1024 bit 1024 bi 1024 bi
内存集成电路类型 EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM
内存宽度 16 16 16 16 16 16 16 16 16 16
功能数量 1 1 1 1 1 1 1 1 1 1
端子数量 8 8 8 8 8 8 8 8 8 8
字数 64 words 64 words 64 words 64 words 64 words 64 words 64 words 64 words 64 words 64 words
字数代码 64 64 64 64 64 64 64 64 64 64
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 85 °C 70 °C 70 °C 85 °C 70 °C 125 °C 70 °C 125 °C 85 °C
最低工作温度 -40 °C -40 °C - - -40 °C - -40 °C - -40 °C -40 °C
组织 64X16 64X16 64X16 64X16 64X16 64X16 64X16 64X16 64X16 64X16
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP SOP TSSOP TSSOP DIP SOP SOP DIP DIP
封装等效代码 SOP8,.25 SOP8,.25 SOP8,.25 TSSOP8,.25 TSSOP8,.25 DIP8,.3 SOP8,.25 SOP8,.25 DIP8,.3 DIP8,.3
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH IN-LINE SMALL OUTLINE SMALL OUTLINE IN-LINE IN-LINE
并行/串行 SERIAL SERIAL SERIAL SERIAL SERIAL SERIAL SERIAL SERIAL SERIAL SERIAL
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 3/5 V 3/5 V 3/5 V 3/5 V 3/5 V 3/5 V 3/5 V 3/5 V 3/5 V 3/5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.73 mm 1.73 mm 1.73 mm 1.2 mm 1.2 mm 4.57 mm 1.75 mm 1.73 mm 4.572 mm 4.57 mm
串行总线类型 MICROWIRE MICROWIRE MICROWIRE MICROWIRE MICROWIRE MICROWIRE MICROWIRE MICROWIRE MICROWIRE MICROWIRE
最大待机电流 0.000002 A 0.000002 A 0.00001 A 0.00001 A 0.000002 A 0.00001 A 0.000003 A 0.00001 A 0.000003 A 0.000002 A
最大压摆率 0.003 mA 0.003 mA 0.003 mA 0.003 mA 0.003 mA 0.003 mA 0.003 mA 0.003 mA 0.003 mA 0.003 mA
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.7 V 2.5 V 2.7 V 2.5 V
标称供电电压 (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 5 V 2.7 V 5 V 2.7 V
表面贴装 YES YES YES YES YES NO YES YES NO NO
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL AUTOMOTIVE COMMERCIAL AUTOMOTIVE INDUSTRIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE
端子节距 1.27 mm 1.27 mm 1.27 mm 0.65 mm 0.65 mm 2.54 mm 1.27 mm 1.27 mm 2.54 mm 2.54 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 3.9 mm 3.9 mm 3.9 mm 3 mm 3 mm 7.62 mm 3.9 mm 3.9 mm 7.62 mm 7.62 mm
最长写入周期时间 (tWC) 10 ms 10 ms 10 ms 10 ms 10 ms 10 ms 10 ms 10 ms 10 ms 10 ms
写保护 SOFTWARE SOFTWARE SOFTWARE SOFTWARE SOFTWARE SOFTWARE SOFTWARE SOFTWARE SOFTWARE SOFTWARE
湿度敏感等级 3 3 3 1 1 3 - 3 3 3
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