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IS93C46B

1,024-BIT SERIAL ELECTRICALLY

ERASABLE PROM

FEATURES

• Industry-standard Microwire Interface

— Non-volatile data storage

— Low voltage operation:

Vcc = 2.5V to 5.5V

— Full TTL compatible inputs and outputs

— Auto increment for efficient data dump

• x16 bit organization

• Hardware and software write protection

— Defaults to write-disabled state at power-up

— Software instructions for write-enable/disable

• Enhanced low voltage CMOS E

PROM

technology

• Versatile, easy-to-use Interface

— Self-timed programming cycle

— Automatic erase-before-write

— Programming status indicator

— Word and chip erasable

— Chip select enables power savings

• Durable and reliable

— 40-year data retention after 1M write cycles

— 1 million write cycles

— Unlimited read cycles

— Schmitt-trigger inputs

• Industrial and Automotive Temperature Grade

ISSI

JULY 2003

DESCRIPTION

The IS93C46B is a low-cost 1kb non-volatile,

ISSI

serial EEPROM. It is fabricated using an

enhanced CMOS design and process. The

IS93C46B contains power-efficient read/write

memory, and organization of 64 words of 16 bits.

The IS93C46B is fully backward compatible with

IS93C46.

An instruction set defines the operation of the

devices, including read, write, and mode-enable

functions. To protect against inadvertent data

modification, all erase and write instructions are

accepted only while the device is write-enabled. A

selected x16 word can be modified with a single

WRITE or ERASE instruction. Additionally, the

two instructions WRITE ALL or ERASE ALL can

program the entire array. Once a device begins

its self-timed program procedure, the data out pin

(Dout) can indicate the READY/BUSY status by

raising chip select (CS). The self-timed write cycle

includes an automatic erase-before-write

capability. The device can output any number of

consecutive words using a single READ

instruction.

FUNCTIONAL BLOCK DIAGRAM

DUMMY

BIT

R/W

AMPS

INSTRUCTION

DECODE,

CONTROL,

AND

CLOCK

GENERATION

ADDRESS

DECODER

EEPROM

ARRAY

64x16

DATA

INSTRUCTION

OUT

WRITE

ENABLE

HIGH VOLTAGE

GENERATOR

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. A

07/23/03

IS93C46B

ISSI

8-Pin JEDEC SOIC “G”

VCC

GND

PIN CONFIGURATIONS

8-Pin DIP, 8-Pin TSSOP

OUT

8-Pin JEDEC SOIC “GR”

GND

OUT

VCC

OUT

VCC

GND

(Rotated)

PIN DESCRIPTIONS

OUT

Vcc

GND

Chip Select

Serial Data Clock

Serial Data Input

Serial Data Output

Not Connected

Power

Ground

instruction begins with a start bit of the logical “1” or

HIGH. Following this are the opcode (2 bits),

address field (6 bits), and data, if appropriate. The

clock signal may be held stable at any moment to

suspend the device at its last state, allowing clock-

speed flexibility. Upon completion of bus

communication, CS would be pulled LOW. The device

then would enter Standby mode if no internal

programming is underway.

Read (READ)

The READ instruction is the only instruction that outputs

serial data on the D

OUT

pin. After the read instruction and

address have been decoded, data is transferred from the

selected memory register into a serial shift register. (Please

note that one logical “0” bit precedes the actual 16-bit

output data string.) The output on D

OUT

changes during the

low-to-high transitions of SK (see Figure 3).

Applications

The IS93C46B is very popular in many high-volume

applications which require low-power, low-density

storage. Applications using this device include

industrial controls, networking, and numerous other

consumer electronics.

Low Voltage Read

The IS93C46B has been designed to ensure that data

read operations are reliable in low voltage environments.

They provide accurate operation with Vcc as low as 2.5V.

Endurance and Data Retention

The IS93C46B is designed for applications requiring up to

1M programming cycles (WRITE, WRALL, ERASE and

ERAL). It provides 40 years of secure data retention without

power after the execution of 1M programming cycles.

Auto Increment Read Operations

In the interest of memory transfer operation applications,

the IS93C46B has been designed to output a continuous

stream of memory content in response to a single read

operation instruction. To utilize this function, the system

asserts a read instruction specifying a start location ad-

dress. Once the 16 bits of the addressed register have

been clocked out, the data in consecutively higher address

locations is output. The address will wrap around continu-

ously with CS HIGH until the chip select (CS) control pin is

brought LOW. This allows for single instruction data dumps

to be executed with a minimum of firmware overhead.

Device Operations

The IS93C46B is controlled by a set of instructions

which are clocked-in serially on the Din pin. Before

each low-to-high transition of the clock (SK), the CS pin

must have already been raised to HIGH, and the Din

value must be stable at either LOW or HIGH. Each

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. A

07/23/03

IS93C46B

ISSI

Write All (WRALL)

Write Enable (WEN)

The write enable (WEN) instruction must be executed

before any device programming (WRITE, WRALL,

ERASE, and ERAL) can be done. When Vcc is applied,

this device powers up in the write disabled state. The

device then remains in a write disabled state until a WEN

instruction is executed. Thereafter, the device remains

enabled until a WDS instruction is executed or until Vcc

is removed. (See Figure 4.) (Note: Chip select must

remain LOW until Vcc reaches its operational value.)

The write all (WRALL) instruction programs all registers

with the data pattern specified in the instruction. As with the

WRITE instruction, the falling edge of CS must occur to

initiate the self-timed programming cycle. If CS is then

brought HIGH after a minimum wait of 250 ns (t

), the

OUT

pin indicates the READY/BUSY status of the chip (see

Figure 6).

Write Disable (WDS)

The write disable (WDS) instruction disables all programming

capabilities. This protects the entire device against acci-

dental modification of data until a WEN instruction is

executed. (When Vcc is applied, this part powers up in the

write disabled state.) To protect data, a WDS instruction

should be executed upon completion of each programming

operation.

Write (WRITE)

The WRITE instruction includes 16 bits of data to be

written into the specified register. After the last data bit

has been applied to D

, and before the next rising edge

of SK, CS must be brought LOW. If the device is write-

enabled, then the falling edge of CS initiates the self-

timed programming cycle (see WEN).

If CS is brought HIGH, after a minimum wait of 250 ns (5V

operation) after the falling edge of CS (t

) D

OUT

will

indicate the READY/BUSY status of the chip. Logical “0”

means programming is still in progress; logical “1” means

the selected register has been written, and the part is

ready for another instruction (see Figure 5). The READY/

BUSY

status will not be available if: a) The CS input goes

HIGH after the end of the self-timed programming cycle,

; or b) Simultaneously CS is HIGH, Din is HIGH, and

SK goes HIGH, which clears the status flag.

Erase Register (ERASE)

After the erase instruction is entered, CS must be brought

LOW. The falling edge of CS initiates the self-timed internal

programming cycle. Bringing CS HIGH after a minimum of

, will cause D

OUT

to indicate the READ/BUSY status of the

chip: a logical “0” indicates programming is still in progress;

a logical “1” indicates the erase cycle is complete and the

part is ready for another instruction (see Figure 8).

Erase All (ERAL)

Full chip erase is provided for ease of programming. Erasing

the entire chip involves setting all bits in the entire memory

array to a logical “1” (see Figure 9).

INSTRUCTION SET - IS93C46B

16-bit Organization

Address

(1)

Input Data

-A

)

11xxxx

-A

)

01xxxx

00xxxx

-A

)

10xxxx

—

-D

)

(2)

-D

)

(2)

—

Instruction

READ

WEN

(Write Enable)

WRITE

Start Bit

OP Code

WRALL

(Write All Registers)

WDS

(Write Disable)

ERASE

ERAL (

Erase All Registers)

Notes:

1. x = Don't care bit.

2. If input data is not 16 bits exactly, the last 16 bits will be taken as input data.

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. A

07/23/03

IS93C46B

ISSI

Value

–0.3 to +6.5

–40 to +85

–40 to +125

–65 to +150

Unit

°C

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol

GND

BIAS

STG

Parameter

Voltage with Respect to GND

Temperature Under Bias (Industrial)

Temperature Under Bias (Automotive)

Storage Temperature

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation of the

device at these or any other conditions above those indicated in the operational sections of

this specification is not implied. Exposure to absolute maximum rating conditions for

extended periods may affect reliability.

OPERATING RANGE

Range

Commercial

Industrial

Automotive

Ambient Temperature

0°C to +70°C

–40°C to +85°C

–40°C to +125°C

2.5V to 5.5V

2.7V to 5.5V or 4.5V to 5.5V

CAPACITANCE

Symbol

OUT

Parameter

Input Capacitance

Output Capacitance

Conditions

= 0V

OUT

= 0V

Max.

Unit

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. A

07/23/03

IS93C46B

ISSI

Test Conditions

= 100 µA

= 2.1 mA

= –100 µA

= –400 µA

Vcc

2.5V to 5.5V

4.5V to 5.5V

2.5V to 5.5V

4.5V to 5.5V

2.5V to 5.5V

4.5V to 5.5V

2.5V to 5.5V

4.5V to 5.5V

= 0V to V

(CS, SK,D

,ORG)

OUT

= 0V to V

, CS = 0V

Min.

—

– 0.2

2.4

0.7

–0.3

Max.

0.2

0.4

—

0.2

0.8

2.5

DC ELECTRICAL CHARACTERISTICS

= 0°C to +70°C for Commercial, –40°C to +85°C for Industrial, and –40°C to +125°C for Automotive.

Symbol Parameter

OL1

OH1

Notes:

Automotive grade devices in this table are tested with Vcc = 2.7V to 5.5V and 4.5V to 5.5V.

Unit

µA

Output LOW Voltage

Output HIGH Voltage

Input HIGH Voltage

Input LOW Voltage

Input Leakage

Output Leakage

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. A

07/23/03

参数对比

与IS93C46B-3PA相近的元器件有：IS93C46B-3GI、IS93C46B-3G、IS93C46B-3Z、IS93C46B-3ZI、IS93C46B-3P、IS93C46B-3GRA、IS93C46B-3GRI、IS93C46B-3GR、IS93C46B-3PI。描述及对比如下：

型号	IS93C46B-3PA	IS93C46B-3GI	IS93C46B-3G	IS93C46B-3Z	IS93C46B-3ZI	IS93C46B-3P	IS93C46B-3GRA	IS93C46B-3GRI	IS93C46B-3GR	IS93C46B-3PI
描述	EEPROM, 64X16, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8	EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, SOIC-8	EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, SOIC-8	EEPROM, 64X16, Serial, CMOS, PDSO8, 0.169 INCH, MO-153, TSSOP-8	EEPROM, 64X16, Serial, CMOS, PDSO8, 0.169 INCH, MO-153, TSSOP-8	EEPROM, 64X16, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8	EEPROM, 64X16, Serial, CMOS, PDSO8, SOIC-8	EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, SOIC-8	EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, SOIC-8	EEPROM, 64X16, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
零件包装代码	DIP	SOIC	SOIC	TSSOP	TSSOP	DIP	SOIC	SOIC	SOIC	DIP
包装说明	0.300 INCH, PLASTIC, DIP-8	0.150 INCH, SOIC-8	0.150 INCH, SOIC-8	0.169 INCH, MO-153, TSSOP-8	0.169 INCH, MO-153, TSSOP-8	0.300 INCH, PLASTIC, DIP-8	SOIC-8	0.150 INCH, SOIC-8	0.150 INCH, SOIC-8	0.300 INCH, PLASTIC, DIP-8
针数	8	8	8	8	8	8	8	8	8	8
Reach Compliance Code	unknow	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最大时钟频率 (fCLK)	1 MHz	1 MHz	1 MHz	1 MHz	1 MHz	1 MHz	1 MHz	1 MHz	1 MHz	1 MHz
数据保留时间-最小值	40	40	40	40	40	40	40	40	40	40
耐久性	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles
JESD-30 代码	R-PDIP-T8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDIP-T8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDIP-T8
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
长度	9.3218 mm	4.9 mm	4.9 mm	4.4 mm	4.4 mm	9.325 mm	4.9 mm	4.9 mm	4.9 mm	9.325 mm
内存密度	1024 bi	1024 bit	1024 bit	1024 bit	1024 bit	1024 bit	1024 bit	1024 bit	1024 bit	1024 bi
内存集成电路类型	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
内存宽度	16	16	16	16	16	16	16	16	16	16
功能数量	1	1	1	1	1	1	1	1	1	1
端子数量	8	8	8	8	8	8	8	8	8	8
字数	64 words	64 words	64 words	64 words	64 words	64 words	64 words	64 words	64 words	64 words
字数代码	64	64	64	64	64	64	64	64	64	64
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	125 °C	85 °C	70 °C	70 °C	85 °C	70 °C	125 °C	85 °C	70 °C	85 °C
最低工作温度	-40 °C	-40 °C	-	-	-40 °C	-	-40 °C	-40 °C	-	-40 °C
组织	64X16	64X16	64X16	64X16	64X16	64X16	64X16	64X16	64X16	64X16
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	DIP	SOP	SOP	TSSOP	TSSOP	DIP	SOP	SOP	SOP	DIP
封装等效代码	DIP8,.3	SOP8,.25	SOP8,.25	TSSOP8,.25	TSSOP8,.25	DIP8,.3	SOP8,.25	SOP8,.25	SOP8,.25	DIP8,.3
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE
并行/串行	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
电源	3/5 V	3/5 V	3/5 V	3/5 V	3/5 V	3/5 V	3/5 V	3/5 V	3/5 V	3/5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	4.572 mm	1.73 mm	1.73 mm	1.2 mm	1.2 mm	4.57 mm	1.75 mm	1.73 mm	1.73 mm	4.57 mm
串行总线类型	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE
最大待机电流	0.000003 A	0.000002 A	0.00001 A	0.00001 A	0.000002 A	0.00001 A	0.000003 A	0.000002 A	0.00001 A	0.000002 A
最大压摆率	0.003 mA	0.003 mA	0.003 mA	0.003 mA	0.003 mA	0.003 mA	0.003 mA	0.003 mA	0.003 mA	0.003 mA
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	2.7 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.7 V	2.5 V	2.5 V	2.5 V
标称供电电压 (Vsup)	5 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	5 V	2.7 V	2.7 V	2.7 V
表面贴装	NO	YES	YES	YES	YES	NO	YES	YES	YES	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	AUTOMOTIVE	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	AUTOMOTIVE	INDUSTRIAL	COMMERCIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	THROUGH-HOLE
端子节距	2.54 mm	1.27 mm	1.27 mm	0.65 mm	0.65 mm	2.54 mm	1.27 mm	1.27 mm	1.27 mm	2.54 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	7.62 mm	3.9 mm	3.9 mm	3 mm	3 mm	7.62 mm	3.9 mm	3.9 mm	3.9 mm	7.62 mm
最长写入周期时间 (tWC)	10 ms	10 ms	10 ms	10 ms	10 ms	10 ms	10 ms	10 ms	10 ms	10 ms
写保护	SOFTWARE	SOFTWARE	SOFTWARE	SOFTWARE	SOFTWARE	SOFTWARE	SOFTWARE	SOFTWARE	SOFTWARE	SOFTWARE
湿度敏感等级	3	3	3	1	1	3	-	3	3	3