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JAN2N3866UB

RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, HERMETIC SEALED, CERAMIC, CERSOT-3

器件类别：分立半导体    晶体管   

厂商名称：Semicoa

厂商官网：http://www.snscorp.com/Semicoa.htm

器件标准：

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器件参数
参数名称
属性值
是否Rohs认证
符合
零件包装代码
SOT
包装说明
SMALL OUTLINE, R-CDSO-N3
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
最大集电极电流 (IC)
0.4 A
基于收集器的最大容量
3.5 pF
集电极-发射极最大电压
30 V
配置
SINGLE
最小直流电流增益 (hFE)
15
最高频带
ULTRA HIGH FREQUENCY BAND
JESD-30 代码
R-CDSO-N3
元件数量
1
端子数量
3
最高工作温度
200 °C
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
NOT SPECIFIED
极性/信道类型
NPN
最大功率耗散 (Abs)
2.9 W
认证状态
Qualified
参考标准
MIL-19500/398
表面贴装
YES
端子形式
NO LEAD
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
2N3866UB
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N3866UBJ)
•
JANTX level (2N3866UBJX)
•
JANTXV level (2N3866UBJV)
•
JANS level (2N3866UBJS)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
•
Radiation testing (total dose) upon request
Applications
•
General purpose high frequency
•
VHF-UHF amplifier transistor
•
NPN silicon transistor
Features
•
•
•
•
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 1008
Reference document:
MIL-PRF-19500/398
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
•
Qualification Levels: JAN, JANTX,
JANTXV and JANS
•
Radiation testing available
T
C
= 25°C unless otherwise specified
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25°C
Derate linearly above 25°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
Rating
30
60
3.5
400
0.5
2.86
325
-65 to +200
Unit
Volts
Volts
Volts
mA
W
mW/°C
°C/W
°C
R
θJA
T
J
T
STG
Copyright 2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3866UB
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEO
I
CES1
I
CES2
Test Conditions
I
C
= 100
µA
I
C
= 5 mA
I
E
= 100
µA
V
CE
= 28 Volts
V
CE
= 55 Volts
V
CE
= 55 Volts, T
A
= 150°C
Min
60
30
3.5
20
100
2
Typ
Max
Units
Volts
Volts
Volts
µA
µA
mA
On Characteristics
Parameter
DC Current Gain
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Collector Efficiency
Power Output
Symbol
|h
FE
|
C
OBO
η
1
η
2
P
1out
P
1out
Test Conditions
V
CE
= 15 Volts, I
C
= 50 mA,
f = 200 MHz
V
CB
= 28 Volts, I
E
= 0 mA,
Symbol
h
FE1
h
FE2
h
FE3
V
CEsat1
Test Conditions
I
C
= 50 mA, V
CE
= 5 Volts
I
C
= 360 mA, V
CE
= 5 Volts
I
C
= 50 mA, V
CE
= 5 Volts
T
A
= -55°C
I
C
= 100 mA, I
B
= 10 mA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
Min
15
5
7
Typ
Max
200
Units
1
Volts
Min
2.5
Typ
Max
8
3.5
Units
pF
%
V
CC
= 28 Volts, f = 400 MHz
P
in
= 0.15 W
P
in
= 0.075 W
V
CC
= 28 Volts, f = 400 MHz
P
in
= 0.15 W
P
in
= 0.075 W
45
40
1.0
0.5
2
Watts
Copyright 2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
查看更多>
参数对比
与JAN2N3866UB相近的元器件有：JANTXV2N3866UB、JANS2N3866UB、JANTX2N3866UB、2N3866UB、JANTXVR2N3866UB。描述及对比如下：
型号 JAN2N3866UB JANTXV2N3866UB JANS2N3866UB JANTX2N3866UB 2N3866UB JANTXVR2N3866UB
描述 RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, HERMETIC SEALED, CERAMIC, CERSOT-3 RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, HERMETIC SEALED, CERAMIC, CERSOT-3 RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, HERMETIC SEALED, CERAMIC, CERSOT-3 RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, HERMETIC SEALED, CERAMIC, CERSOT-3 RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, HERMETIC SEALED, CERAMIC, CERSOT-3 RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, HERMETIC SEALED, CERAMIC, CERSOT-3
包装说明 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3
Reach Compliance Code compliant compliant compliant compliant unknown unknow
最大集电极电流 (IC) 0.4 A 0.4 A 0.4 A 0.4 A 0.4 A 0.4 A
基于收集器的最大容量 3.5 pF 3.5 pF 3.5 pF 3.5 pF 3.5 pF 3.5 pF
集电极-发射极最大电压 30 V 30 V 30 V 30 V 30 V 30 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最高频带 ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 代码 R-CDSO-N3 R-CDSO-N3 R-CDSO-N3 R-CDSO-N3 R-CDSO-N3 R-CDSO-N3
元件数量 1 1 1 1 1 1
端子数量 3 3 3 3 3 3
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN NPN NPN NPN
表面贴装 YES YES YES YES YES YES
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
零件包装代码 SOT SOT SOT SOT SOT -
针数 3 3 3 3 3 -
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 -
最小直流电流增益 (hFE) 15 15 15 15 - -
最高工作温度 200 °C 200 °C 200 °C 200 °C 200 °C -
最大功率耗散 (Abs) 2.9 W 2.9 W 2.9 W 2.9 W - -
认证状态 Qualified Qualified Qualified Qualified Not Qualified -
参考标准 MIL-19500/398 MIL-19500/398 MIL-19500/398 MIL-19500/398 - MIL-19500; 100K Rad(Si)
Base Number Matches 1 1 1 1 1 -
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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