2N7334
Qualified Levels:
JAN, JANTX, and
JANTXV
Available on
commercial
versions
QUAD N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/597
DESCRIPTION
This 2N7334 device is military qualified up to a JANTXV level for high-reliability applications.
Microsemi also offers numerous other products to meet higher and lower power voltage
regulation applications.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
JEDEC registered 2N7334 number.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/597.
RoHS compliant versions available (commercial grade only).
MO-036AB
Package
APPLICATIONS / BENEFITS
•
•
•
High frequency operation.
Lightweight.
ESD rated to class 1A.
MAXIMUM RATINGS
@
T
A
= +25 ºC unless otherwise noted.
Parameters / Test Conditions
Operating & Storage Temperature
Thermal Resistance, Junction to Ambient
Gate – Source Voltage
Continuous Drain Current @ T
C
= +25 °C
Continuous Drain Current @ T
C
= +100 °C
Max. Power Dissipation @ T
C
= +25 ºC (free air)
(1)
Symbol
T
op
, T
stg
1 die
4 die
R
ӨJA
V
GS
I
D1
I
D2
P
T
MAX R
ds(on)
I
S
E
AS
E
AR
I
AR
I
DM
(1, 2)
Value
-55 to +150
90
50
± 20
1.0
0.6
1.4
0.70
1.4
1.0
75
.14
1.0
4.0
Unit
°C
ºC/W
V
A
A
W
Ω
A
MJ
MJ
A
A (pk)
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Maximum Drain to Source On State Resistance
@ T
J
= +25 ºC
@ T
J
= +150 ºC
Collector Efficiency
Single Pulse Avalanche Energy Capability
Repetitive Avalanche Energy Capability
Rated Avalanche Current (repetitive and nonrepetitive)
Off-State Current
Notes:
1. Derated linearly 11 mW/°C for T
C
> +25 °C.
2. The following formula derives the maximum theoretical I
D
limit. I
D
is limited by package and internal wires
and may also be limited by pin diameter:
3. I
DM
= 4 x I
D1
as calculated in note 2.
T4-LDS-0212, Rev. 2 (121516)
©2012 Microsemi Corporation
Page 1 of 6
2N7334
MECHANICAL and PACKAGING
•
•
•
•
•
CASE: Ceramic, lid: alloy 42, Au over Ni plating.
TERMINALS: Alloy 42, Au over Ni plating, solder dipped. RoHS compliant without solder dipping on commercial grade only.
MARKING: Manufacturer’s ID, part number, date code.
WEIGHT: Approx. 1.3 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN=JAN level
JANTX=JANTX level
JANTXV=JANTXV level
Blank = Commercial
JEDEC type number
(See
Electrical Characteristics
table)
2N7334
(e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Symbol
I
D
I
F
T
C
V
DD
V
DS
V
GS
Drain current
Forward current
Case temperature
Drain supply voltage
Drain to source voltage
Gate to source voltage
SYMBOLS & DEFINITIONS
Definition
T4-LDS-0212, Rev. 2 (121516)
©2012 Microsemi Corporation
Page 2 of 6
2N7334
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 1m A
Gate-Source Voltage (Threshold)
V
DS
≥ V
GS
, I
D
= 0.25mA
V
DS
≥ V
GS
, I
D
= 0.25 mA, T
j
= +125 °C
V
DS
≥ V
GS
, I
D
= 0.25 mA, T
j
= -55 °C
Gate Current
V
GS
= ±20 V, V
DS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V, T
j
= +125 °C
Drain Current
V
GS
= 0 V, V
DS
= 80 % of rated V
DS
V
GS
= 0 V, V
DS
= 80 % of rated V
DS
, T
j
= +125 °C
Static Drain-Source On-State Resistance
V
GS
= 10 V, I
D
= 0.60 A
V
GS
= 10 V, I
D
= 1.0 A
T
j
= +125 °C
V
GS
= 10 V, I
D
= 0.60 A
Diode Forward Voltage
V
GS
= 0 V, I
D
= 1.0 A
V
(BR)DSS
V
GS(th)1
V
GS(th)2
V
GS(th)3
I
GSS1
I
GSS2
I
DSS1
I
DSS2
r
DS(on)1
r
DS(on)2
r
DS(on)3
V
SD
100
2.0
1.0
4.0
5.0
±100
±200
25
0.25
0.70
0.80
1.4
1.5
nA
V
Symbol
Min.
Max.
Unit
V
µA
mA
Ω
Ω
Ω
V
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
Condition B
Q
g(on)
Q
gs
Q
gd
15
7.5
7.5
nC
Min.
Max.
Unit
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Switching time tests:
I
D
= 1.0 A, V
GS
= 10 V,
Turn-on delay time
Rinse time
Gate drive impedance = 7.5
Ω,
Turn-off delay time
V
DD
= 50 V
Fall time
di/dt = 100 A/µs, V
DD
≤ 30 V,
Diode Reverse Recovery Time
I
D
= 1.0 A
Symbol
t
d(on)
t
r
t
d(off)
t
f
t
rr
Min.
Max.
20
25
40
40
200
Unit
ns
ns
T4-LDS-0212, Rev. 2 (121516)
©2012 Microsemi Corporation
Page 3 of 6
2N7334
GRAPHS
Thermal Response (Z
thJA
)
t
1
, Rectangle Pulse Duration (seconds)
FIGURE 1
– Thermal Response Curves
I
D
DRAIN CURRENT (AMPERES)
T
C
, CASE TEMPERATURE (°C)
FIGURE 2 -
Maximum Drain Current vs Case Temperature
T4-LDS-0212, Rev. 2 (121516)
©2012 Microsemi Corporation
Page 4 of 6
2N7334
GRAPHS (continued)
I
D
DRAIN CURRENT (AMPERES)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3 -
Maximum Safe Operating Area
T4-LDS-0212, Rev. 2 (121516)
©2012 Microsemi Corporation
Page 5 of 6
