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JANS2N5154U3

Small Signal Bipolar Transistor, 2A I(C), NPN,

器件类别：分立半导体    晶体管   

厂商名称：Microsemi

厂商官网：https://www.microsemi.com

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
Objectid
1402825133
Reach Compliance Code
unknown
ECCN代码
EAR99
最大集电极电流 (IC)
2 A
配置
SINGLE
最小直流电流增益 (hFE)
70
JESD-30 代码
R-XDSO-N3
JESD-609代码
e0
元件数量
1
端子数量
3
最高工作温度
200 °C
封装主体材料
UNSPECIFIED
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
NPN
最大功率耗散 (Abs)
100 W
认证状态
Qualified
表面贴装
YES
端子面层
TIN LEAD
端子形式
NO LEAD
端子位置
DUAL
文档预览
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/544
DEVICES
LEVELS
2N5152
2N5152L
2N5152U3
2N5154
2N5154L
2N5154U3
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
(1)
@ T
A
= +25°C
@ T
C
= +25°C
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
J
, T
stg
R
θJC
Value
80
100
5.5
2.0
1.0
10
-65 to +200
10
1.7 (U3)
Unit
Vdc
Vdc
Vdc
Adc
W
°C
°C/W
TO-5
2N5152L, 2N5154L
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to Case
(1)
Note:
1)
2)
See 19500/544 for thermal derating curves.
This value applies for P
W
≤
8.3ms, duty cycle
≤
1%.
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 100mAdc, I
B
= 0
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc, I
C
= 0
V
EB
= 5.5Vdc, I
C
= 0
Collector-Emitter Cutoff Current
V
CE
= 60Vdc, V
BE
= 0
V
CE
= 100Vdc, V
BE
= 0
Collector-Emitter Cutoff Current
V
CE
= 40Vdc, I
B
= 0
ON CHARACTERTICS
Forward-Current Transfer Ratio
I
C
= 50mAdc, V
CE
= 5Vdc
I
C
= 2.5Adc, V
CE
= 5Vdc
V
(BR)CEO
80
Vdc
TO-39 (TO-205AD)
2N5152, 2N5154
Symbol
Min.
Max.
Unit
I
EBO
1.0
1.0
1.0
1.0
50
µAdc
mAdc
µAdc
mAdc
µAdc
I
CES
I
CEO
2N5152
2N5154
2N5152
2N5154
h
FE
20
50
30
70
---
---
90
200
U-3
2N5152U3, 2N5154U3
T4-LDS-0039 Rev. 1 (080797)
Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/544
ELECTRICAL CHARACTERISTICS (con’t)
Parameters / Test Conditions
I
C
= 5Adc, V
CE
= 5Vdc
Collector-Emitter Saturation Voltage
I
C
= 2.5Adc, I
B
= 250mAdc
I
C
= 5.0Adc, I
B
= 500mAdc
Base-Emitter Voltage Non-Saturation
I
C
= 2.5Adc, V
CE
= 5Vdc
Base-Emitter Saturation Voltage
I
C
= 2.5Adc, I
B
= 250mAdc
I
C
= 5.0Adc, I
B
= 500mAdc
2N5152
2N5154
Symbol
h
FE
Min.
20
40
Max.
Unit
V
CE(sat)
0.75
1.5
1.45
Vdc
V
BE
Vdc
V
BE(sat)
1.45
2.2
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 500mAdc, V
CE
= 5Vdc, f = 10MHz
2N5152
2N5154
Small-signal short Circuit Forward-Current Transfer Ratio
I
C
= 100mAdc, V
CE
= 5Vdc, f = 1KHz
2N5152
2N5154
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, f = 1.0MHz
Symbol
Min.
Max.
Unit
|h
fe
|
6
7
h
fe
C
obo
20
50
250
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
I
C
= 5Adc, I
B1
= 500mAdc
Turn-Off Time
R
L
= 6Ω
Storage Time
Fall Time
I
B2
= -500mAdc
V
BE(OFF)
= 3.7Vdc
Symbol
t
on
t
off
t
s
t
f
Min.
Max.
0.5
1.5
1.4
0.5
Unit
μs
μs
μs
μs
SAFE OPERATING AREA
DC Tests
T
C
= +25°C, 1 Cycle, t
P
= 1.0s
Test 1
V
CE
= 5.0Vdc, I
C
= 2.0Adc
Test 2
V
CE
= 32Vdc, I
C
= 310mAdc
Test 3
V
CE
= 80Vdc, I
C
= 12.5mAdc
T4-LDS-0039 Rev. 1 (080797)
Page 2 of 2
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参数对比
与JANS2N5154U3相近的元器件有：JANTXV2N5152U3、JANS2N5152U3、MB9BF405NA、JANTX2N5154U3、JAN2N5154U3、2N5154U3、JANTXV2N5154U3。描述及对比如下：
型号 JANS2N5154U3 JANTXV2N5152U3 JANS2N5152U3 MB9BF405NA JANTX2N5154U3 JAN2N5154U3 2N5154U3 JANTXV2N5154U3
描述 Small Signal Bipolar Transistor, 2A I(C), NPN, Small Signal Bipolar Transistor, 5A I(C), NPN, Small Signal Bipolar Transistor, 5A I(C), NPN, This document states the current technical specifications regarding Small Signal Bipolar Transistor, 2A I(C), NPN, Small Signal Bipolar Transistor, 2A I(C), NPN, Small Signal Bipolar Transistor, 2A I(C), NPN, Small Signal Bipolar Transistor, 2A I(C), NPN,
是否Rohs认证 不符合 不符合 不符合 - 不符合 不符合 不符合 不符合
Objectid 1402825133 1402825773 1402825129 - 1402825545 1402824769 1787037844 1402825781
Reach Compliance Code unknown compliant unknown - compliant compliant unknown compliant
ECCN代码 EAR99 EAR99 EAR99 - EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 2 A 5 A 5 A - 2 A 2 A 2 A 2 A
配置 SINGLE SINGLE SINGLE - SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 70 30 30 - 70 70 70 70
JESD-30 代码 R-XDSO-N3 R-XDSO-N3 R-XDSO-N3 - R-XDSO-N3 R-XDSO-N3 R-XDSO-N3 R-XDSO-N3
元件数量 1 1 1 - 1 1 1 1
端子数量 3 3 3 - 3 3 3 3
最高工作温度 200 °C 200 °C 200 °C - 200 °C 200 °C 200 °C 200 °C
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED - UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN - NPN NPN NPN NPN
最大功率耗散 (Abs) 100 W 10 W 10 W - 100 W 100 W 10 W 100 W
认证状态 Qualified Qualified Qualified - Qualified Qualified Not Qualified Qualified
表面贴装 YES YES YES - YES YES YES YES
端子形式 NO LEAD NO LEAD NO LEAD - NO LEAD NO LEAD NO LEAD NO LEAD
端子位置 DUAL DUAL DUAL - DUAL DUAL DUAL DUAL
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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