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JANTX2N6768

Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN

器件类别：分立半导体    晶体管   

厂商名称：Infineon(英飞凌)

厂商官网：http://www.infineon.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
包装说明
TO-204, 2 PIN
Reach Compliance Code
compli
ECCN代码
EAR99
其他特性
HIGH RELIABILITY
雪崩能效等级（Eas）
11.3 mJ
外壳连接
DRAIN
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
400 V
最大漏极电流 (Abs) (ID)
14 A
最大漏极电流 (ID)
14 A
最大漏源导通电阻
0.4 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码
TO-204
JESD-30 代码
O-MBFM-P2
JESD-609代码
e0
元件数量
1
端子数量
2
工作模式
ENHANCEMENT MODE
最高工作温度
150 °C
封装主体材料
METAL
封装形状
ROUND
封装形式
FLANGE MOUNT
峰值回流温度（摄氏度）
NOT SPECIFIED
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
150 W
最大脉冲漏极电流 (IDM)
56 A
认证状态
Qualified
参考标准
MIL-19500/543
表面贴装
NO
端子面层
Tin/Lead (Sn/Pb)
端子形式
PIN/PEG
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 29 April 2013.
INCH-POUND
MIL-PRF-19500/543N
29 March 2013
SUPERSEDING
MIL-PRF-19500/543M
22 September 2011
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON
REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1,
2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and
MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for N-channel, enhancement-mode,
MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as
specified in
MIL-PRF-19500
and two levels of product assurance for each unencapsulated die, with avalanche energy
ratings (EAS and EAR) and maximum avalanche current (IAR).
1.2 Physical dimensions. See
figure 1
(TO-204AE for types 2N6764 and 2N6766; TO-204AA for types 2N6768
and 2N6770 (formerly TO-3)), see
figure 2
(TO-254AA for types 2N6764T1, 2N6766T1; 2N6768T1, and 2N6770T1),
and
figures 3, 4,
and
5
for JANHC and JANKC (die) dimensions.
1.3 Maximum ratings.
(T
A
= +25°C, unless otherwise specified).
PT
TA = +25°C
W
4
4
4
4
R
θJC
(2)
°C/W
0.83
0.83
0.83
0.83
VDS
V dc
100
200
400
500
VDG
V dc
100
200
400
500
VGS
V dc
±20
±20
±20
±20
ID1 (3) (4)
TC = +25°C
A dc
38.0
30.0
14.0
12.0
IS
A dc
38.0
30.0
14.0
12.0
ID2 (3) (4)
TC = +100°C
A dc
24.0
19.0
9.0
7.75
Type
PT (1)
TC = +25°C
W
150
150
150
150
2N6764, 2N6764T1
2N6766, 2N6766T1
2N6768, 2N6768T1
2N6770, 2N6770T1
See notes on next page.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil.
Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
https://assist.dla.mil/.
AMSC N/A
FSC 5961
MIL-PRF-19500/543N
1.3 Maximum ratings - Continued.
Type
IDM
(5)
A pk
2N6764, 2N6764T1
2N6766, 2N6766T1
2N6768, 2N6768T1
2N6770, 2N6770T1
152
120
56
48
EAS
EAR
IAR
(5)
VISO
70,000 ft.
attitude
TSTG
and
TJ
°C
-55
to
+150
Max rDS(on); (6)
VGS = 10 V dc, ID = ID2
TJ = +25°C
Ω
0.055
0.085
0.300
0.400
TJ = +150°C
Ω
0.105
0.170
0.750
1.000
A
150
500
700
750
mJ
15
15
15
15
mJ
38.0
30.0
14.0
12.0
400
500
(1) Derate linearly 1.2 W/°C for T
C
> +25°C.
(2) See
figure 6,
thermal impedance curves.
(3) The following formula derives the maximum theoretical I
D
limit. I
D
is also limited by package and internal
wires:
I
D
=
(
R
θ
JC
T
JM
- T
C
)
x
(
R
DS
( on ) at T
JM
)
(4) See
figure 7,
maximum drain current graphs.
(5) IDM = 4 x ID1 as calculated in note 2.
(6) Pulsed (see
4.5.1).
1.4 Primary electrical characteristics at T
C
= +25°C.
Type
Min V
(BR)DSS
V
GS
= 0
I
D
= 1.0mA
dc
V dc
2N6764, 2N6764T1
2N6766, 2N6766T1
2N6768, 2N6768T1
2N6770, 2N6770T1
(1) Pulsed (see
4.5.1).
100
200
400
500
V
GS(TH)1
V
DS
≥
V
GS
I
D
= 0.25 mA dc
V dc
Min
Max
2.0
2.0
2.0
2.0
4.0
4.0
4.0
4.0
Max I
DSS1
V
GS
= 0
V
DS
= 80 percent of rated V
DS
µA
dc
25
25
25
25
2
MIL-PRF-19500/543N
FIGURE 1. Physical dimensions of transistor types 2N6764 and 2N6766, TO-204AE;
for types 2N6768 and 2N6770, TO-204AA.
3
MIL-PRF-19500/543N
Dimensions
Ltr
Min
CD
CH
HR
HR
1
HT
LD
.250
.495
.131
.060
.057
.038
LL
L
1
MHD
MHS
PS
PS
1
s
.151
1.177
.420
.205
.655
.312
Inches
Max
.875
.360
.525
.188
.135
.063
.043
.500
.050
.161
1.197
.440
.225
.675
3.84
29.90
10.67
5.21
16.64
6.35
12.57
3.33
1.52
1.45
0.97
7.92
Millimeter
Min
Max
22.23
9.15
13.3
4.78
3.43
1.60
1.10
12.70
1.27
4.09
30.40
11.18
5.72
17.15
3
7
5
6
Notes
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. These dimensions shall be measured at points .050 inch (1.27 mm) and .055 inch (1.40 mm)
below the seating plane. When gauge is not used, measurement will be made at the seating
plane.
4. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch
(0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header
and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall.
5. These dimensions pertain to the 2N6764 and 2N6766 types.
6. These dimensions pertain to the 2N6768 and 2N6770 types.
7. Mounting holes shall be deburred on the seating plane side.
8. Drain is electrically connected to the case.
9. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 1. Physical dimensions of transistor types 2N6764 and 2N6766 TO-204AE;
for types 2N6768 and 2N6770, TO-204AA - Continued.
4
MIL-PRF-19500/543N
Dimensions
Ltr
Inches
Min
BL
CH
LD
LL
.535
.249
.035
.510
Max
.545
.260
.045
.570
Millimeters
Min
13.59
6.32
0.89
12.95
Max
13.84
6.60
1.14
14.48
3, 4
Notes
TO-254
LO
LS
MHD
MHO
TL
TT
TW
Term 1
Term 2
Term 3
.150 BSC
.150 BSC
.139
.665
.790
.040
.535
.149
.685
.800
.050
.545
3.81 BSC
3.81 BSC
3.53
16.89
20.07
1.02
13.59
Drain
Source
Gate
3.78
17.40
20.32
1.27
13.84
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Protrusion thickness of ceramic eyelets included in dimension LL.
4. All terminals are isolated from case.
5. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 2. Physical dimensions for 2N6764T1, 2N6766T1, 2N6768T1, and 2N6770T1 (TO-254AA).
5
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参数对比
与JANTX2N6768相近的元器件有：JANTXV2N6768、JANHCA2N6768、JANHCA2N6764、JANHCA2N6766、JANTXV2N6764、JANHCA2N6770、JANTX2N6764、JANTXV2N6766。描述及对比如下：
型号 JANTX2N6768 JANTXV2N6768 JANHCA2N6768 JANHCA2N6764 JANHCA2N6766 JANTXV2N6764 JANHCA2N6770 JANTX2N6764 JANTXV2N6766
描述 Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
包装说明 TO-204, 2 PIN TO-204, 2 PIN DIE-3 DIE-3 DIE-3 TO-204, 2 PIN DIE-3 TO-204, 2 PIN HERMETIC SEALED, TO-204, 2 PIN
Reach Compliance Code compli compli compli compliant unknown unknown unknown unknown unknown
雪崩能效等级（Eas） 11.3 mJ 11.3 mJ 700 mJ 150 mJ 500 mJ 150 mJ 750 mJ 150 mJ 60 mJ
外壳连接 DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE SINGLE SINGLE SINGLE WITH BUILT-IN DIODE SINGLE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 400 V 400 V 400 V 100 V 200 V 100 V 500 V 100 V 200 V
最大漏极电流 (Abs) (ID) 14 A 14 A 14 A 38 A 30 A 38 A 12 A 38 A 30 A
最大漏极电流 (ID) 14 A 14 A 14 A 38 A 30 A 38 A 12 A 38 A 30 A
最大漏源导通电阻 0.4 Ω 0.4 Ω 0.3 Ω 0.055 Ω 0.085 Ω 0.065 Ω 0.4 Ω 0.065 Ω 0.09 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 O-MBFM-P2 O-MBFM-P2 S-XUUC-N3 S-XUUC-N3 S-XUUC-N3 O-MBFM-P2 S-XUUC-N3 O-MBFM-P2 O-MBFM-P2
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0 e0
元件数量 1 1 1 1 1 1 1 1 1
端子数量 2 2 3 3 3 2 3 2 2
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 METAL METAL UNSPECIFIED UNSPECIFIED UNSPECIFIED METAL UNSPECIFIED METAL METAL
封装形状 ROUND ROUND SQUARE SQUARE SQUARE ROUND SQUARE ROUND ROUND
封装形式 FLANGE MOUNT FLANGE MOUNT UNCASED CHIP UNCASED CHIP UNCASED CHIP FLANGE MOUNT UNCASED CHIP FLANGE MOUNT FLANGE MOUNT
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
最大功率耗散 (Abs) 150 W 150 W 150 W 150 W 150 W 150 W 150 W 150 W 150 W
最大脉冲漏极电流 (IDM) 56 A 56 A 56 A 152 A 120 A 152 A 48 A 152 A 120 A
认证状态 Qualified Qualified Qualified Qualified Qualified Qualified Qualified Qualified Qualified
参考标准 MIL-19500/543 MIL-19500/543 MIL-19500/543G MIL-19500/543G MIL-19500/543G MIL-19500/543 MIL-19500/543G MIL-19500/543 MIL-19500/543
表面贴装 NO NO YES YES YES NO YES NO NO
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 PIN/PEG PIN/PEG NO LEAD NO LEAD NO LEAD PIN/PEG NO LEAD PIN/PEG PIN/PEG
端子位置 BOTTOM BOTTOM UPPER UPPER UPPER BOTTOM UPPER BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
ECCN代码 EAR99 EAR99 - EAR99 EAR99 EAR99 - EAR99 EAR99
其他特性 HIGH RELIABILITY HIGH RELIABILITY - - - HIGH RELIABILITY - HIGH RELIABILITY HIGH RELIABILITY
JEDEC-95代码 TO-204 TO-204 - - - TO-204 - TO-204 TO-204
厂商名称 - - - Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌)
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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