JANTXV2N7228,JANTXV2N7228 pdf中文资料,JANTXV2N7228引脚图,JANTXV2N7228电路-Datasheet-电子工程世界

器件参数

参数名称

属性值

厂商名称

ADPOW

包装说明

FLANGE MOUNT, S-MSFM-P3

Reach Compliance Code

unknown

其他特性

AVALANCHE RATED

雪崩能效等级（Eas）

750 mJ

外壳连接

ISOLATED

配置

SINGLE WITH BUILT-IN DIODE

最小漏源击穿电压

500 V

最大漏极电流 (Abs) (ID)

12 A

最大漏极电流 (ID)

12 A

最大漏源导通电阻

0.415 Ω

FET 技术

METAL-OXIDE SEMICONDUCTOR

JEDEC-95代码

TO-254AA

JESD-30 代码

S-MSFM-P3

元件数量

端子数量

工作模式

ENHANCEMENT MODE

最高工作温度

150 °C

封装主体材料

METAL

封装形状

SQUARE

封装形式

FLANGE MOUNT

极性/信道类型

N-CHANNEL

功耗环境最大值

150 W

最大功率耗散 (Abs)

150 W

最大脉冲漏极电流 (IDM)

48 A

认证状态

Not Qualified

参考标准

MIL

表面贴装

端子形式

PIN/PEG

端子位置

SINGLE

晶体管应用

SWITCHING

晶体管元件材料

SILICON

文档预览

Standard Power MOSFETs

Power MOS V

MOSFET Technology...

is a patented self-

aligned interdigitated open cell structure with improved switching and R

DS(ON)

advantages over our

previous MOS IV

generation and over industry standard closed cell devices.

Feature

Increased packing density

Shallower diffusions

Redesigned rings

Chip layout changes

Avalanche Energy Rated

Result

Lower R

DS(ON)

Benefit

Lower conduction losses

Lower temperature

Faster switching speeds

Less switching loses

Improved reliability

Lower leakage currents

Faster switching

More robust design

Lower Capacitances and

gate charge

Higher blocking voltages

More uniform signal

propagation

100% tested and guaranteed

Power MOS V

FREDFET Technology...

has all the features

and benefits of the Power MOS V

MOSFET with a faster recovery intrinsic body diode.

Faster reverse recovery (250ns)

- Eliminates the need for external FRED or Schottky rectifiers

Improved ruggedness of intrinsic diode

- Commutative dv/dt rating of >5V/ns

Soft recovery, low leakage current, lower recovery charge

Used whenever intrinsic diode is expected to carry forward current

- Half Bridge, Full Bridge, 3-Phase Bridge topologies

Contact your local APT Representative or APT directly for information regarding the availability of

Hermetic FREDFETs.

Standard Power MOSFETs

DSS

DS(ON)

(Cont) P

iss

(pF) Q

(nC) Surface

Volts Ohms

Amps Watts Typ

Typ

Mount Pkg.

600

500

400

1000

800

600

500

400

200

1000

800

600

500

0.450

0.320

0.415

0.315

0.880

1.100

0.580

0.670

0.270

0.370

0.190

0.260

0.140

0.180

0.042

1.100

0.650

0.320

0.350

0.220

0.240

0.300

400

300

1000

600

500

400

200

1000

600

500

400

200

0.150

0.090

0.570

0.170

0.120

0.082

0.026

0.250

0.075

0.050

0.035

0.013

11.8

14.0

12.0

14.0

11.0

9.0

13.5

11.5

20.0

15.5

24.0

18.5

28.0

22.0

50.0

9.0

11.5

17.5

16.0

21.0

18.5

14.7

25.5

33.0

17.3

31.5

40.0

44.0

65.0

33.0

60.5

74.5

89.0

146.0

150

250

200

250

200

250

200

250

200

250

200

250

200

235

200

235

200

155

235

450

625

2600

2650

2410

2400

3700

3050

3700

3050

4300

3450

4400

3600

4500

3350

5100

3050

3750

3450

3700

3600

2650

3600

4100

6600

7500

7400

7410

8500

15000

16500

16300

16800

18000

115

110

103

100

185

150

185

150

185

140

200

140

195

135

148

150

160

140

150

140

110

160

130

335

315

312

330

290

660

700

690

700

630

CoolPack

CoolPack 1

FREDFET

Available

APT

Part Number

APT6045CVR

APT5032CVR

2N7228/JXJV

2N7227/JX/JV

Package

Style

TO-254[C]

(ISOLATED)

CoolPack

CoolPack 3

Yes

APT10088HVR

APT1001R1HVR

APT8058HVR

APT8067HVR

APT6027HVR

APT6037HVR

Yes

APT5019HVR

APT5026HVR

APT4014HVR

APT4018HVR

TO-258[H]

(ISOLATED)

Yes

APT20M42HVR

APT1001R1AVR

APT6032AVR

APT6035AVR

Yes

APT5022AVR

APT5024AVR

APT5030AVR

APT4015AVR

TO-3[A]

Yes

APT30M90AVR

APT10057WVR

APT6017WVR

APT5012WVR

APT40M82WVR

APT20M26WVR

APT10025PVR

APT60M75PVR

APT50M50PVR

APT40M35PVR

APT20M13PVR

P-PACK

(ISOLATED)

TO-267(W)

ISOLATED

N/A

Packages shown are not to scale

参数对比

与JANTXV2N7228相近的元器件有：JANTX2N7228、JANTX2N7227。描述及对比如下：

型号	JANTXV2N7228	JANTX2N7228	JANTX2N7227
描述	Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN	Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN	Power Field-Effect Transistor, 14A I(D), 400V, 0.315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN
厂商名称	ADPOW	ADPOW	ADPOW
包装说明	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	unknown	unknown	unknown
其他特性	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED
雪崩能效等级（Eas）	750 mJ	750 mJ	700 mJ
外壳连接	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	500 V	500 V	400 V
最大漏极电流 (Abs) (ID)	12 A	12 A	14 A
最大漏极电流 (ID)	12 A	12 A	14 A
最大漏源导通电阻	0.415 Ω	0.415 Ω	0.315 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-254AA	TO-254AA	TO-254AA
JESD-30 代码	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3
元件数量	1	1	1
端子数量	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C
封装主体材料	METAL	METAL	METAL
封装形状	SQUARE	SQUARE	SQUARE
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	150 W	150 W	150 W
最大脉冲漏极电流 (IDM)	48 A	48 A	56 A
认证状态	Not Qualified	Not Qualified	Not Qualified
参考标准	MIL	MIL	MIL
表面贴装	NO	NO	NO
端子形式	PIN/PEG	PIN/PEG	PIN/PEG
端子位置	SINGLE	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON
Base Number Matches	-	1	1