型号
- 型号
- 关键词
Power Field-Effect Transistor, 6.3A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18
厂商名称：Infineon(英飞凌)
下载文档| 型号 | JANTXVR2N7501U5 | JANSR2N7500U5 | JANSR2N7501U5 | JANTXVR2N7500U5 |
|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 6.3A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18 | Power Field-Effect Transistor, 9A I(D), 130V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 6.3A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18 | Power Field-Effect Transistor, 9A I(D), 130V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
| Reach Compliance Code | not_compliant | compliant | not_compliant | not_compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 包装说明 | CHIP CARRIER, S-CBCC-N15 | - | CHIP CARRIER, S-CBCC-N15 | CHIP CARRIER, S-CBCC-N15 |
| 其他特性 | RADIATION HARDENED | - | RADIATION HARDENED | RADIATION HARDENED |
| 雪崩能效等级（Eas） | 40 mJ | - | 40 mJ | 56 mJ |
| 配置 | SINGLE | - | SINGLE | SINGLE |
| 最小漏源击穿电压 | 200 V | - | 200 V | 130 V |
| 最大漏极电流 (Abs) (ID) | 6.3 A | - | 6.3 A | 9 A |
| 最大漏极电流 (ID) | 6.3 A | - | 6.3 A | 9 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | S-CBCC-N15 | - | S-CBCC-N15 | S-CBCC-N15 |
| JESD-609代码 | e0 | - | e0 | e0 |
| 元件数量 | 1 | - | 1 | 1 |
| 端子数量 | 15 | - | 15 | 15 |
| 工作模式 | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | - | 150 °C | 150 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | - | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | SQUARE | - | SQUARE | SQUARE |
| 封装形式 | CHIP CARRIER | - | CHIP CARRIER | CHIP CARRIER |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | - | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 25 W | - | 25 W | 25 W |
| 最大脉冲漏极电流 (IDM) | 25.2 A | - | 25.2 A | 36 A |
| 认证状态 | Qualified | - | Qualified | Qualified |
| 参考标准 | MIL-19500/707 | - | MIL-19500/707 | MIL-19500/707 |
| 表面贴装 | YES | - | YES | YES |
| 端子面层 | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | NO LEAD | - | NO LEAD | NO LEAD |
| 端子位置 | BOTTOM | - | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON |