首页 > 器件类别 > 分立半导体 > 晶体管

KSA1156YSTSTU

TRANS PNP 400V 0.5A TO-126

器件类别:分立半导体    晶体管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

器件标准:

下载文档
KSA1156YSTSTU 在线购买

供应商:

器件:KSA1156YSTSTU

价格:-

最低购买:-

库存:点击查看

点击购买

器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
ON Semiconductor(安森美)
制造商包装代码
340AS
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
1 week
最大集电极电流 (IC)
0.5 A
集电极-发射极最大电压
400 V
配置
SINGLE
最小直流电流增益 (hFE)
100
JEDEC-95代码
TO-126
JESD-30 代码
R-PSFM-T3
JESD-609代码
e3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
PNP
认证状态
Not Qualified
表面贴装
NO
端子面层
Tin (Sn)
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
最大关闭时间(toff)
5000 ns
最大开启时间(吨)
1000 ns
文档预览
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
KSA1156
KSA1156
High Voltage Switching
Low Power Switching Regulator
DC-DC Converter
• High Breakdown Voltage
• Low Collector Saturation Voltage
• High Speed Switching
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
B
I
C
I
CP
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Ratings
- 400
- 400
-7
- 0.25
- 0.5
-1
1
10
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
V
CEX
(sus)
I
CBO
I
EBO
I
CEX1
I
CEX2
h
FE
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn On Time
Storage Time
Fall Time
Test Condition
I
C
= - 100mA, I
B
= - 10mA
L = - 20mH
I
C
= - 200mA, I
B1
= - I
B2
= - 20mA
V
BE
(off)= 5V, L = 10mH
V
CB
= - 400V, I
E
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 400V, V
BE
(off) = 1.5V
V
CE
= - 400V, V
BE
(off) = 1.5V
T
C
= 125°C
V
CE
= - 5V, I
C
= - 100mA
I
C
= - 100mA, I
B
= - 10mA
I
C
= - 100mA, I
B
= - 10mA
V
CC
= - 150V, I
C
= - 100mA
I
B1
= - 10mA , I
B2
= 20mA
R
L
= 1.5KΩ
30
Min.
- 400
- 400
- 100
- 10
- 100
-1
200
-1
- 1.2
1
4
1
V
V
µs
µs
µs
Max.
Units
V
V
µA
µA
µA
mA
h
FE
Classification
Classification
h
FE
©2000 Fairchild Semiconductor International
N
30 ~ 60
R
40 ~ 80
O
60 ~ 120
Y
100 ~ 200
Rev. A, February 2000
KSA1156
Typical Characteristics
-0.5
1000
I
B
= -200mA
I
C
[A], COLLECTOR CURRENT
-0.4
I
B
= -180mA
V
CE
= -5V
Pulse Test
I
B
= -140mA
-0.3
h
FE
, DC CURRENT GAIN
-10
I
B
= -160mA
100
I
B
= -120mA
I
B
= -100mA
-0.2
I
B
= -80mA
I
B
= -60mA
10
-0.1
I
B
= -40mA
I
B
= -20mA
-0.0
-0
-2
-4
-6
-8
1
-0.1
-1
-10
-100
-1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-10
-10
I
C
= 10 I
B
I
C
[A], COLLECTOR CURRENT
I
C
MAX. (Pulse)
-1
-1
V
BE
(sat)
-0.1
DI
s
S
D
LIM SIPA C
ITE TIO
N
D
1m
10
10
0
S/
b
-0.1
LI
V
CE
(sat)
M
IT
-0.01
-0.01
-0.1
-1E-3
-1
-10
-100
-1000
-1
-10
-100
V
CEO
MAX.
-1000
200
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
ED
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Safe Operating Area
-250
160
140
I
C
(mA), COLLECTOR CURRENT
-200
120
dT(%),I
c
DERATING
-150
100
80
S/b
Di
ss
ip
a
Lim
ited
-100
60
tio
n
40
-50
20
Li
m
ite
d
-0
-0
-100
-200
-300
-400
-500
0
0
50
o
100
150
V
CE
(v), COLLECTOR EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Reverse Bias Safe Operating Area
Figure 6. Derating Curve of Safe Operating Areas
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSA1156
Typical characteristics
(Continued)
16
14
P
C
[W], POWER DISSIPATION
12
10
8
6
4
2
0
0
50
o
100
150
200
T
C
[ C], CASE TEMPERATURE
Figure 7. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
8.30
7.70
4.00
3.80
3.20
1.35
1.70
1.50
0.85
0.65 3X
D
E
14.20 MAX
3.45
3.05
11.20
10.80
1.95
1.55
1.00
#1
TOP VIEW
2.29
0.254
M
0.60
0.45 3X
SIDE VIEW
FRONT VIEW
NOTES:
A.
B.
C.
D
E
F.
PRODUCTION
CODE
TSSTU
TSTU
NONE
(STD LENGTH)
TERMINAL
LENGTH "D"
3.45 - 4.05
2.36 - 2.96
12.76 - 13.36
TERMINAL
LENGTH "E"
6.45-7.45
5.36-6.36
15.76-16.76
NO INDUSTRY STANDARD APPLIES TO THIS
PACKAGE
ALL DIMENSIONS ARE IN MILLIMETERS
DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR PROTRUSIONS
FOR TERMINAL LENGTH "D", REFER TO TABLE
FOR TERMINAL LENGTH "E", REFER TO TABLE
DRAWING FILENAME: MKT-TO126AArev2
查看更多>
参数对比
与KSA1156YSTSTU相近的元器件有:KSA1156OSTU、KSA1156OS。描述及对比如下:
型号 KSA1156YSTSTU KSA1156OSTU KSA1156OS
描述 TRANS PNP 400V 0.5A TO-126 Bipolar Transistors - BJT PNP Silicon TRANS PNP 400V 0.5A TO-126
Brand Name ON Semiconductor ON Semiconductor -
是否无铅 不含铅 不含铅 -
制造商包装代码 340AS 340AS -
Reach Compliance Code compliant compliant -
ECCN代码 EAR99 EAR99 -
最大集电极电流 (IC) 0.5 A 0.5 A -
集电极-发射极最大电压 400 V 400 V -
配置 SINGLE SINGLE -
最小直流电流增益 (hFE) 100 60 -
JEDEC-95代码 TO-126 TO-126 -
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 -
JESD-609代码 e3 e3 -
元件数量 1 1 -
端子数量 3 3 -
最高工作温度 150 °C 150 °C -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY -
封装形状 RECTANGULAR RECTANGULAR -
封装形式 FLANGE MOUNT FLANGE MOUNT -
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED -
极性/信道类型 PNP PNP -
认证状态 Not Qualified Not Qualified -
表面贴装 NO NO -
端子面层 Tin (Sn) Tin (Sn) -
端子形式 THROUGH-HOLE THROUGH-HOLE -
端子位置 SINGLE SINGLE -
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED -
晶体管应用 SWITCHING SWITCHING -
晶体管元件材料 SILICON SILICON -
最大关闭时间(toff) 5000 ns 5000 ns -
最大开启时间(吨) 1000 ns 1000 ns -
热门器件
热门资源推荐
器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
需要登录后才可以下载。
登录取消