KSC3953
KSC3953
CRT Display Video Output
• High Current Gain Bandwidth Product : f
T
=400MHz(Typ.)
• High Collector-Emitter Voltage : V
CEO
=120V
• Low Reverse Transfer Capacitance : C
re
=1.7pF(Typ.)
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
120
120
3
200
400
1.3
8
150
- 55 ~ 150
Units
V
V
V
mA
mA
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
EBO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
C
re
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Test Condition
I
C
= 10µA, I
B
= 0
I
C
= 1mA, R
BE
=
∞
I
E
= 100µA, I
C
= 0
V
CB
= 80V, I
E
= 0
V
EB
= 2V, I
C
= 0
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 100mA
I
C
= 30mA, I
B
= 3mA
I
C
= 30mA, I
B
= 3mA
V
CE
= 10V,I
C
= 50mA
V
CB
= 30V, f = 1MHz
V
CB
= 30V, f = 1MHz
400
2.1
1.7
40
20
Min.
120
120
3
0.1
1.0
120
1.0
1.0
V
V
MHz
pF
pF
Typ.
Max.
Units
V
V
V
µA
µA
h
FE
Classificntion
Classification
h
FE1
C
40 ~ 80
D
60 ~ 120
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC3953
Typical Characteristics
100
1000
I
B
= 0.9mA
I
B
= 0.8mA
V
CE
= 10V
I
C
[mA], COLLECTOR CURRENT
80
I
B
= 0.7mA
I
B
= 0.6mA
h
FE
, DC CURRENT GAIN
100
60
I
B
= 0.5mA
I
B
= 0.4mA
40
I
B
= 0.3mA
I
B
= 0.2mA
20
10
I
B
= 0.1mA
0
0
4
8
12
I
B
= 0
16
20
1
1
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
120
V
CE
(sat)[V], SATURATION VOLTAGE
I
C
= 10 I
B
V
CE
= 10V
I
C
[mA], COLLECTOR CURRENT
100
1
80
60
0.1
40
20
0.01
1
10
100
1000
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
100
f = 1MHz
I
E
= 0
f = 1MHz
I
E
= 0
C
ob
[pF], CAPACITANCE
10
C
re
[pF], CAPACITANCE
1
10
100
10
1
1
0.1
0.1
0.1
0.1
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
Figure 6. Reverse Capacitance
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC3953
Typical Characteristics
(Continued)
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
1000
V
CE
= 10V
I
C
MAX. (Pulse)
1m
ms
10
I
C
[mA], COLLECTOR CURRENT
I
C
MAX. (DC)
T
C
= 25 C
100
o
s
100
10
1
10
100
1
1
10
100
1000
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Current Gain Bandwidth Product
Figure 8. Safe Operating Area
10
P
C
[W], POWER DISSIPATION
8
6
T
c
4
2
T
a
0
0
25
50
o
75
100
125
150
175
T[ C], TEMPERATURE
Figure 9. Power Derating
©2000 Fairchild Semiconductor International
V
CEO
MAX.
10
Rev. A, February 2000
KSC3953
Package Demensions
TO-126
±0.10
3.90
8.00
±0.30
3.25
±0.20
14.20MAX
ø3.20
±0.10
11.00
±0.20
(1.00)
0.75
±0.10
1.60
±0.10
0.75
±0.10
±0.30
(0.50)
1.75
±0.20
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
13.06
16.10
±0.20
0.50
–0.05
+0.10
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E
2
CMOS™
FACT™
FACT Quiet Series™
FAST
®
FASTr™
GTO™
DISCLAIMER
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
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which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
