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KSD986-Y

Small Signal Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126

器件类别:分立半导体    晶体管   

厂商名称:SAMSUNG(三星)

厂商官网:http://www.samsung.com/Products/Semiconductor/

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器件参数
参数名称
属性值
包装说明
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
ECCN代码
EAR99
Is Samacsys
N
外壳连接
ISOLATED
最大集电极电流 (IC)
1.5 A
集电极-发射极最大电压
80 V
配置
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)
8000
JEDEC-95代码
TO-126
JESD-30 代码
R-PSFM-T3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
极性/信道类型
NPN
功耗环境最大值
10 W
认证状态
Not Qualified
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
VCEsat-Max
1.5 V
Base Number Matches
1
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参数对比
与KSD986-Y相近的元器件有:KSD985、KSD985-Y、KSD985-R、KSD985-O、KSD986-R、KSD986-O。描述及对比如下:
型号 KSD986-Y KSD985 KSD985-Y KSD985-R KSD985-O KSD986-R KSD986-O
描述 Small Signal Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126 Small Signal Bipolar Transistor, 1.5A I(C), 1-Element, NPN, Silicon, TO-126 Small Signal Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126 Small Signal Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126 Small Signal Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126 Small Signal Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126 Small Signal Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126
包装说明 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
最大集电极电流 (IC) 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
配置 DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE) 8000 2000 8000 2000 4000 2000 4000
JEDEC-95代码 TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 TO-126
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
元件数量 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
极性/信道类型 NPN NPN NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 AMPLIFIER SWITCHING AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
ECCN代码 EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99
Is Samacsys N N N N N - -
集电极-发射极最大电压 80 V - 60 V 60 V 60 V 80 V 80 V
功耗环境最大值 10 W - 10 W 10 W 10 W 10 W 10 W
VCEsat-Max 1.5 V - 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V
Base Number Matches 1 1 1 1 1 - -
厂商名称 - SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星)
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