KSH41C
KSH41C
General Purpose Amplifier Low Speed
Switching Applications
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP41 and TIP41C
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
100
100
5
6
10
2
20
1.75
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
I
CEO
I
CES
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Parameter
* Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
Test Condition
I
C
= 30mA, I
B
= 0
V
CE
= 60V, I
B
= 0
V
CE
= 100V, V
BE
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 0.3A
V
CE
= 4V, I
C
= 3A
I
C
= 6A, I
B
= 600mA
V
CE
= 6A, I
C
= 4A
V
CE
= 10V, I
C
= 500mA
3
30
15
Min.
100
Max.
50
10
0.5
75
1.5
2
V
V
MHz
Units
V
µA
uA
mA
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH41C
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
10
V
CE
= 2V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
100
1
V
BE
(sat)
10
0.1
V
CE
(sat)
1
0.01
0.1
1
10
0.01
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1000
V
CC
= 30V
I
C
= 10.I
B
C
ob
[pF], CAPACITANCE
t
R
, t
D
[
µ
s], TURN ON TIME
1
100
t
R
0.1
10
t
D
. V
BE
(off)=5V
1
0.1
0.01
0.01
0.1
1
10
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector Capacitance
Figure 4. Turn On Time
10
100
t
F
, t
STG
[
µ
s], TURN OFF TIME
I
C
[A], COLLECTOR CURRENT
10
I
CP
(max)
10
50
0
µ
0
µ
s
1
t
STG
I
C
(max)
1
5m
s
DC
1m
s
s
0.1
t
F
0.1
0.01
0.01
0.1
1
10
0.01
1
10
100
1000
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH41C
Typical Characteristics
(Continued)
25
P
C
[W], POWER DISSIPATION
20
15
10
5
0
0
25
50
o
75
100
125
150
175
T
C
[ C], CASE TEMPERATURE
Figure 7. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH41C
Package Dimensions
D-PAK
6.60
±0.20
5.34
±0.30
(0.50)
(4.34)
(0.50)
0.70
±0.20
2.30
±0.10
0.50
±0.10
0.60
±0.20
6.10
±0.20
2.70
±0.20
9.50
±0.30
0.91
±0.10
0.80
±0.20
MAX0.96
2.30TYP
[2.30±0.20]
0.76
±0.10
2.30TYP
[2.30±0.20]
0.89
±0.10
0.50
±0.10
1.02
±0.20
2.30
±0.20
(0.70)
(0.90)
(0.10)
(3.05)
6.10
±0.20
9.50
±0.30
2.70
±0.20
(2XR0.25)
0.76
±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
(1.00)
6.60
±0.20
(5.34)
(5.04)
(1.50)
MIN0.55
KSH41C
Package Dimensions
(Continued)
I-PAK
6.60
±0.20
5.34
±0.20
(0.50)
(4.34)
(0.50)
0.50
±0.10
2.30
±0.20
0.60
±0.20
0.70
±0.20
0.80
±0.10
6.10
±0.20
1.80
±0.20
MAX0.96
0.76
±0.10
9.30
±0.30
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
0.50
±0.10
©2002 Fairchild Semiconductor Corporation
16.10
±0.30
Dimensions in Millimeters
Rev. A4, October 2002
