SEMICONDUCTOR
TECHNICAL DATA
CAMERA STROBO FLASH APPLICATION.
HIGH CURRENT APPLICATION.
FEATURES
h
FE
=100 320 (V
CE
=-2V, I
C
=-0.5A).
h
FE
=70(Min.) (V
CE
=-2V, I
C
=-3A).
Low Collector Saturation Voltage.
: V
CE(sat)
=-0.5V(Max.) (I
C
=-3A, I
B
=-75mA).
High Power Dissipation.
: P
C
=1W(Tc=25
), P
C
=0.5W(Ta=25
).
D
K
F
F
D
A
H
KTA1001
EPITAXIAL PLANAR PNP TRANSISTOR
C
G
J
B
E
1
2
3
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
Duty cycle=30%(Max.)
Ta=25
Tc=25
*
DC
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
RATING
-35
-20
-8
-3
-5
-0.5
0.5
1
150
-55
150
UNIT
V
V
V
A
A
A
W
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
_
2.50 + 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
_
1.50 + 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
Pulse (Note1)
Marking
h
FE
Rank
Lot No.
Note1 : Pulse Test : Pulse width=10ms(Max.)
*Pc : KTA1001 mounted on ceramic substrate(250mm
2
x0.8t)
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note2 : h
FE
(1) Classification
0:100 200,
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
V
(BR)EBO
h
FE
(1) (Note2)
h
FE
(2)
V
CE(sat)
V
BE
f
T
C
ob
Y:160
320
TEST CONDITION
V
CB
=-35V, I
E
=0
V
EB
=-8V, I
C
=0
I
C
=-10mA, I
B
=0
I
E
=-1mA, I
C
=0
V
CE
=-2V, I
C
=-0.5A
V
CE
=-2V, I
C
=-3A
I
C
=-3A, I
B
=-75mA
V
CE
=-2V, I
C
=-3A
V
CE
=-2V, I
C
=-0.5A
V
CB
=-10V, I
E
=0, f=1MHz
MIN.
-
-
-20
-8
100
70
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
170
62
MAX.
-100
-100
-
-
320
-
-0.5
-1.5
-
-
V
V
MHz
pF
UNIT
nA
nA
V
V
1994. 3. 21
Revision No : 0
K
Type Name
1/2
KTA1001
I
C
- V
CE
COLLECTOR-EMITTER SATURATION
-4
COLLECTOR CURRENT I
C
(A)
-100mA
A
V
CE
(sat) - I
C
-1
COMMON EITTER
COMMON EMITTER
-20mA
Ta=25 C
-5 0 m
VOLTAGE V
CE
(sat) (V)
-0.5
-0.3
I
C
/I
B
=40
-3
-2
-10mA
-5mA
-0.1
-0.05
-0.03
0
=1
Ta
0
C
C
25
a= C
T
5
=-2
Ta
-1
-3mA
-2mA
I
B
=-1mA
0
0
-0.8
-1.6
-2.4
-3.2
-4.0
-0.01
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
h
FE
- I
C
2k
COLLECTOR CURRENT I
C
(A)
DC CURRENT GAIN h
FE
1k
Ta=100 C
COMMON EMITTER
V
CE
=-1V
Ta=25 C
Ta=-25 C
SAFE OPERATING AREA
-10
-5
-3
-1
-0.5
-0.3
-0.1
I
C
MAX. (PULSED)
I
C
MAX. (DC)
DC
*
100
10
ms
ms
*
*
500
300
OP
ER
AT
IO
N
100
50
30
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
-0.05
-0.03
-0.1
* SINGLE
NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-0.3
-1
-3
-10
-30
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR POWER DISSPATION P
C
(W)
P
C
- T
a
1.2
1
1 MOUNTED ON CERAMIC
SUBSTRATE
(250mm
2
x0.8t)
2 Ta=25 C
1.0
0.8
0.6
0.4
0.2
0
0
20
40
2
60
80
100
120
140
160
AMBIENT TEMPERATURE Ta ( C)
1994. 3. 21
Revision No : 0
2/2
