SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
・Excellent
h
FE
Linearity
: h
FE
(0.1mA)/h
FE
(2mA)=0.95(Typ.).
・Low
Noise : NF=1dB(Typ.), 10dB(Max.).
・Complementary
to KTC4075E.
・Small
Package.
・Suffix
U : Qualified to AEC-Q101.
ex) KTA2014E-RTK/HU
A
G
H
2
1
KTA2014E
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
D
3
DIM
A
B
C
D
E
F
G
J
C
H
J
MILLIMETERS
_
1.60 + 0.20
_
0.85+ 0.10
_
0.70 + 0.10
_
0.27 + 0.10
_
+ 0.10
1.60
_
0.39 + 0.10
_
1.00 + 0.10
0.50
_
0.13 + 0.05
F
F
1. EMITTER
℃
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
-50
-50
-5
-150
-30
100
150
-55½150
UNIT
V
V
V
mA
mA
mW
℃
℃
2. BASE
3. COLLECTOR
ESM
Marking
Type Name
h
FE
Rank
S
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
V
CE(sat)
f
T
C
ob
NF
TEST CONDITION
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-2mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-10V, I
C
=-1mA
V
CB
=-10V, I
E
=0, f=1MHz
V
CE
=-6V, I
C
=-0.1mA
f=1kHz, Rg=10kΩ
MIN.
-
-
70
-
80
-
-
TYP.
-
-
-
-0.1
-
4
1.0
MAX.
-0.1
-0.1
400
-0.3
-
7
10
V
MHz
pF
dB
UNIT
μ
A
μ
A
Note : h
FE
Classification O(2):70½140, Y(4):120½240, GR(6):200½400
2018. 04. 10
Revision No : 2
1/3
KTA2014E
I
C
- V
CE
-240
COLLECTOR CURRENT I
C
(mA)
I
B
=-2.0mA
COMMON EMITTER
Ta=25 C
I
B
=-1.5mA
I
B
=-1.0mA
I
B
=-0.5mA
I
B
=-0.2mA
I
B
=0mA
h
FE
- I
C
3k
COMMON EMITTER
DC CURRENT GAIN h
FE
-200
-160
-120
-80
-40
0
1k
500
300
Ta=100 C
Ta=25 C
V
CE
=-6V
100
50
Ta=-25 C
V
CE
=-1V
0
-1
-2
-3
-4
-5
-6
-7
30
-0.1
-0.3
-1
-3
-10
-30
-100
-300
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(mA)
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
-1
-0.5
-0.3
BASE-EMITTER SATURATION
VOLTAGE V
BE(sat)
(V)
COMMON EMITTER
I
C
/I
B
=10
V
BE(sat)
- I
C
-10
-5
-3
COMMON EMITTER
I
C
/I
B
=10
Ta=25 C
-0.1
-0.05
-0.03
0
10
a=
T
C
-1
-0.5
-0.3
Ta=25 C
Ta=-25 C
-0.01
-0.1
-0.3
-1
-3
-10
-30
-100
-300
-0.1
-0.1
-0.3
-1
-3
-10
-30
-100
-300
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
f
T
- I
C
TRANSITION FREQUENCY f
T
(MHz)
3k
1k
500
300
100
50
30
10
0.1
COMMON EMITTER
V
CE
=-10V
Ta=25 C
I
B
- V
BE
-1k
BASE CURRENT I
B
(μA)
-300
-100
Ta=2
5 C
Ta=-2
5 C
00 C
COMMON EMITTER
V
CE
=-6V
-30
-10
-3
-1
-0.3
0
-0.2
-0.4
0.3
1
3
10
30
100
300
Ta=1
-0.6
-0.8
-1.0
-1.2
COLLECTOR CURRENT I
C
(mA)
BASE-EMITTER VOLTAGE V
BE
(V)
2018. 04. 10
Revision No : 2
2/3
KTA2014E
COLLECTOR LPOWER DISSIPATION P
C
(mW)
Pc - Ta
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta ( C)
2018. 04. 10
Revision No : 2
3/3
电源技术
