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L2SA1577RT1G

Small Signal Bipolar Transistor, 0.5A I(C), PNP,

器件类别:分立半导体    晶体管   

厂商名称:LRC

厂商官网:http://www.lrc.cn

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
,
Reach Compliance Code
unknown
最大集电极电流 (IC)
0.5 A
配置
Single
最小直流电流增益 (hFE)
180
最高工作温度
150 °C
极性/信道类型
PNP
最大功率耗散 (Abs)
0.15 W
表面贴装
YES
Base Number Matches
1
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
F
We declare that the material of product compliance with RoHS requirements.
F
ORDERING INFORMATION
Device
L2SA1577QT1G Series
L2SA1577QT3G Series
Package
SC-70
SC-70
Shipping
3000/Tape & Reel
10000/Tape & Reel
1
2
SC-70/SOT– 323
L2SA1577QT1G Series
3
F
Absolute maximum ratings (Ta = 25
_C)
3
COLLECTOR
1
BASE
2
EMITTER
F
DEVICE MARKING
L2SA1577PT1G =HP L2SA1577QT1G=HQ L2SA1577RT1G =HR
F
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(I
C
= –1 mA)
Emitter–Base Breakdown Voltage
(I
E
= – 100
µA)
Collector–Base Breakdown Voltage
(I
C
= – 100
µA)
Collector Cutoff Current
(V
CB
= – 20 V)
Emitter cutoff current
(V
EB
= – 4 V)
Collector-emitter saturation voltage
(I
C
/ I
B
= – 100 mA / – 10m A)
DC current transfer ratio
(V
CE
= – 3 V, I
C
= –10mA)
Transition frequency
(V
CE
= – 5 V, I
E
= 20mA, f=100MHz )
Output capacitance
(V
CB
= – 10 V, I
E
= 0A, f =1MHz )
Symbol
V
(BR)CEO
Min
– 32
–5
– 40
82
Typ
––
200
7.0
Max
–1
– 1
-0.4
390
––
Unit
V
V
V
µA
µA
V
––
MHz
pF
V
(BR)EBO
V
(BR)CBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
ob
F
h
FE
values are classified as follows:
hFE
*
P
82~270
Q
120~270
R
180~390
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
L2SA1577QT1G SERIES
F
Electrical characteristic curves
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
L2SA1577QT1G SERIES
SC-70/SOT-323
D
e1
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
H
E
1
2
E
b
e
A
0.05 (0.002)
A2
L
c
DIM
A
A1
A2
b
c
D
E
e
e1
L
H
E
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.095
A1
GENERIC
MARKING DIAGRAM
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
XX
M
XX
M
1
= Specific Device Code
= Date Code
= Pb−Free Package
G
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “
G”,
may or may not be present.
mm
inches
Rev.O 3/3
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参数对比
与L2SA1577RT1G相近的元器件有:L2SA1577PT3G、L2SA1577QT3G、L2SA1577QT1G、L2SA1577RT3G、L2SA1577PT1G。描述及对比如下:
型号 L2SA1577RT1G L2SA1577PT3G L2SA1577QT3G L2SA1577QT1G L2SA1577RT3G L2SA1577PT1G
描述 Small Signal Bipolar Transistor, 0.5A I(C), PNP, Small Signal Bipolar Transistor, 0.5A I(C), PNP, Small Signal Bipolar Transistor, 0.5A I(C), PNP, Small Signal Bipolar Transistor, 0.5A I(C), PNP, Small Signal Bipolar Transistor, 0.5A I(C), PNP, Small Signal Bipolar Transistor, 0.5A I(C), PNP,
是否Rohs认证 符合 符合 符合 符合 符合 符合
Reach Compliance Code unknown unknown unknown unknown unknown unknown
最大集电极电流 (IC) 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
配置 Single Single Single Single Single Single
最小直流电流增益 (hFE) 180 82 120 120 180 82
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
极性/信道类型 PNP PNP PNP PNP PNP PNP
最大功率耗散 (Abs) 0.15 W 0.15 W 0.15 W 0.15 W 0.15 W 0.15 W
表面贴装 YES YES YES YES YES YES
Base Number Matches 1 1 1 1 1 1
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