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LF356M/NOPB

Operational Amplifier, 1 Func, 13000uV Offset-Max, BIPolar, PDSO8, SOP-8

器件类别:模拟混合信号IC    放大器电路   

厂商名称:Rochester Electronics

厂商官网:https://www.rocelec.com/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Rochester Electronics
零件包装代码
SOIC
包装说明
SOP-8
针数
8
Reach Compliance Code
unknown
ECCN代码
EAR99
放大器类型
OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB)
0.0002 µA
标称共模抑制比
100 dB
最大输入失调电压
13000 µV
JESD-30 代码
R-PDSO-G8
JESD-609代码
e3
长度
4.9 mm
湿度敏感等级
1
负供电电压上限
-18 V
标称负供电电压 (Vsup)
-15 V
功能数量
1
端子数量
8
最高工作温度
70 °C
最低工作温度
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
座面最大高度
1.75 mm
标称压摆率
12 V/us
供电电压上限
18 V
标称供电电压 (Vsup)
15 V
表面贴装
YES
技术
BIPOLAR
温度等级
COMMERCIAL
端子面层
Tin (Sn)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
40
标称均一增益带宽
5000 kHz
宽度
3.9 mm
文档预览
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LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers
December 2001
LF155/LF156/LF256/LF257/LF355/LF356/LF357
JFET Input Operational Amplifiers
General Description
These are the first monolithic JFET input operational ampli-
fiers to incorporate well matched, high voltage JFETs on the
same chip with standard bipolar transistors (BI-FET
Tech-
nology). These amplifiers feature low input bias and offset
currents/low offset voltage and offset voltage drift, coupled
with offset adjust which does not degrade drift or
common-mode rejection. The devices are also designed for
high slew rate, wide bandwidth, extremely fast settling time,
low voltage and current noise and a low 1/f noise corner.
n
Logarithmic amplifiers
n
Photocell amplifiers
n
Sample and Hold circuits
Common Features
n
Low input bias current: 30pA
n
Low Input Offset Current: 3pA
n
High input impedance: 10
12
n
Low input noise current:
n
High common-mode rejection ratio:
n
Large dc voltage gain: 106 dB
100 dB
Features
Advantages
n
Replace expensive hybrid and module FET op amps
n
Rugged JFETs allow blow-out free handling compared
with MOSFET input devices
n
Excellent for low noise applications using either high or
low source impedance — very low 1/f corner
n
Offset adjust does not degrade drift or common-mode
rejection as in most monolithic amplifiers
n
New output stage allows use of large capacitive loads
(5,000 pF) without stability problems
n
Internal compensation and large differential input voltage
capability
Uncommon Features
LF155/
LF355
j
Extremely
LF156/
LF256/
LF356
1.5
LF257/
LF357
(A
V
=5)
1.5
Units
4
µs
fast settling
time to
0.01%
j
Fast slew
5
2.5
20
12
5
12
50
20
12
V/µs
MHz
rate
j
Wide gain
Applications
n
n
n
n
Precision high speed integrators
Fast D/A and A/D converters
High impedance buffers
Wideband, low noise, low drift amplifiers
bandwidth
j
Low input
noise
voltage
Simplified Schematic
00564601
*
3pF in LF357 series.
BI-FET
, BI-FET II
are trademarks of National Semiconductor Corporation.
© 2001 National Semiconductor Corporation
DS005646
www.national.com
LF155/LF156/LF256/LF257/LF355/LF356/LF357
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required, contact the National Semiconductor Sales Office/Distributors for
availability and specifications.
LF155/6
Supply Voltage
Differential Input Voltage
Input Voltage Range (Note 2)
Output Short Circuit Duration
T
JMAX
H-Package
N-Package
M-Package
Power Dissipation at T
A
= 25˚C (Notes
1, 8)
H-Package (Still Air)
H-Package (400 LF/Min Air Flow)
N-Package
M-Package
Thermal Resistance (Typical)
θ
JA
H-Package (Still Air)
H-Package (400 LF/Min Air Flow)
N-Package
M-Package
(Typical)
θ
JC
H-Package
Storage Temperature Range
Soldering Information (Lead Temp.)
Metal Can Package
Soldering (10 sec.)
Dual-In-Line Package
Soldering (10 sec.)
Small Outline Package
Vapor Phase (60 sec.)
Infrared (15 sec.)
215˚C
220˚C
215˚C
220˚C
260˚C
260˚C
260˚C
300˚C
300˚C
300˚C
23˚C/W
−65˚C to +150˚C
23˚C/W
−65˚C to +150˚C
23˚C/W
−65˚C to +150˚C
160˚C/W
65˚C/W
160˚C/W
65˚C/W
130˚C/W
195˚C/W
160˚C/W
65˚C/W
130˚C/W
195˚C/W
560 mW
1200 mW
400 mW
1000 mW
670 mW
380 mW
400 mW
1000 mW
670 mW
380 mW
150˚C
115˚C
100˚C
100˚C
115˚C
100˚C
100˚C
LF256/7/LF356B
LF355/6/7
±
22V
±
40V
±
20V
Continuous
±
22V
±
40V
±
20V
Continuous
±
18V
±
30V
±
16V
Continuous
See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of
soldering surface mount devices.
ESD tolerance
(100 pF discharged through 1.5kΩ)
1000V
1000V
1000V
DC Electrical Characteristics
(Note 3)
Symbol
V
OS
∆V
OS
/∆T
∆TC/∆V
OS
I
OS
Parameter
Input Offset Voltage
Average TC of Input
Offset Voltage
Change in Average TC
with V
OS
Adjust
Input Offset Current
Conditions
Min
R
S
=50Ω, T
A
=25˚C
Over Temperature
R
S
=50Ω
R
S
=50Ω, (Note 4)
T
J
=25˚C, (Notes 3, 5)
T
J
≤T
HIGH
5
0.5
3
20
20
LF155/6
Typ
3
Max Min
5
7
5
0.5
3
20
1
LF256/7
LF356B
Typ
3
Max Min
5
6.5
5
0.5
3
50
2
LF355/6/7
Typ
3
Max
10
13
mV
mV
µV/˚C
µV/˚C
per mV
pA
nA
Units
www.national.com
2
LF155/LF156/LF256/LF257/LF355/LF356/LF357
DC Electrical Characteristics
(Note 3)
Symbol
I
B
R
IN
A
VOL
Parameter
Input Bias Current
Input Resistance
Large Signal Voltage
Gain
Output Voltage Swing
Input Common-Mode
Voltage Range
Common-Mode
Rejection Ratio
Supply Voltage
Rejection Ratio
(Note 6)
(Continued)
LF256/7
LF356B
Max Min
100
50
10
12
50
25
200
50
25
10
12
200
25
15
Typ
30
Max Min
100
5
10
12
200
Conditions
Min
T
J
=25˚C, (Notes 3, 5)
T
J
≤T
HIGH
T
J
=25˚C
V
S
=
±
15V, T
A
=25˚C
V
O
=
±
10V, R
L
=2k
Over Temperature
LF155/6
Typ
30
LF355/6/7
Typ
30
Max
200
8
Units
pA
nA
V/mV
V/mV
V
O
V
CM
CMRR
PSRR
V
S
=
±
15V, R
L
=10k
V
S
=
±
15V, R
L
=2k
V
S
=
±
15V
±
12
±
10
±
11
85
85
±
13
±
12
+15.1
−12
100
100
±
12
±
10
±
11
85
85
±
13
±
12
±
15.1
−12
100
100
±
12
±
10
+10
80
80
±
13
±
12
+15.1
−12
100
100
V
V
V
V
dB
dB
DC Electrical Characteristics
T
A
= T
J
= 25˚C, V
S
=
±
15V
Parameter
Supply
Current
LF155
Typ
2
Max
4
LF355
Typ
2
Max
4
LF156/256/257/356B
Typ
5
Max
7
LF356
Typ
5
Max
10
LF357
Typ
5
Max
10
Units
mA
AC Electrical Characteristics
T
A
= T
J
= 25˚C, V
S
=
±
15V
LF155/355
Symbol
SR
Parameter
Slew Rate
Conditions
Typ
LF155/6:
A
V
=1,
LF357: A
V
=5
GBW
t
s
e
n
Gain Bandwidth Product
Settling Time to 0.01%
Equivalent Input Noise
Voltage
(Note 7)
R
S
=100Ω
f=100 Hz
f=1000 Hz
i
n
Equivalent Input Current
Noise
Input Capacitance
f=100 Hz
f=1000 Hz
25
20
0.01
0.01
3
15
12
0.01
0.01
3
15
12
0.01
0.01
3
pF
2.5
4
5
1.5
5
LF156/256/
356B
Min
7.5
LF156/256/356/
LF356B
Typ
12
50
20
1.5
LF257/357
Units
Typ
V/µs
V/µs
MHz
µs
C
IN
Notes for Electrical Characteristics
Note 1:
The maximum power dissipation for these devices must be derated at elevated temperatures and is dictated by T
JMAX
,
θ
JA
, and the ambient temperature,
T
A
. The maximum available power dissipation at any temperature is P
D
=(T
JMAX
−T
A
)/θ
JA
or the 25˚C P
dMAX
, whichever is less.
Note 2:
Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 3:
Unless otherwise stated, these test conditions apply:
3
www.national.com
LF155/LF156/LF256/LF257/LF355/LF356/LF357
Notes for Electrical Characteristics
LF155/156
Supply Voltage, V
S
T
A
T
HIGH
(Continued)
LF256/257
LF356B
LF355/6/7
V
S
=
±
15V
0˚C
T
A
+70˚C
+70˚C
±
15V
V
S
±
20V
−55˚C
T
A
+125˚C
+125˚C
±
15V
V
S
±
20V
−25˚C
T
A
+85˚C
+85˚C
±
15V
V
S
±
20V
0˚C
T
A
+70˚C
+70˚C
and V
OS
, I
B
and I
OS
are measured at V
CM
= 0.
Note 4:
The Temperature Coefficient of the adjusted input offset voltage changes only a small amount (0.5µV/˚C typically) for each mV of adjustment from its original
unadjusted value. Common-mode rejection and open loop voltage gain are also unaffected by offset adjustment.
Note 5:
The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, T
J
. Due to limited
production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation, Pd. T
J
= T
A
+
θ
JA
Pd where
θ
JA
is the thermal resistance from junction to ambient. Use of a heat sink is
recommended if input bias current is to be kept to a minimum.
Note 6:
Supply Voltage Rejection is measured for both supply magnitudes increasing or decreasing simultaneously, in accordance with common practice.
Note 7:
Settling time is defined here, for a unity gain inverter connection using 2 kΩ resistors for the LF155/6. It is the time required for the error voltage (the voltage
at the inverting input pin on the amplifier) to settle to within 0.01% of its final value from the time a 10V step input is applied to the inverter. For the LF357, A
V
= −5,
the feedback resistor from output to input is 2kΩ and the output step is 10V (See Settling Time Test Circuit).
Note 8:
Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate outside
guaranteed limits.
Typical DC Performance Characteristics
specified.
Input Bias Current
Curves are for LF155 and LF156 unless otherwise
Input Bias Current
00564637
00564638
Input Bias Current
Voltage Swing
00564639
00564640
www.national.com
4
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参数对比
与LF356M/NOPB相近的元器件有:LF357H、LF257H、LF356BH/NOPB、LF356BH。描述及对比如下:
型号 LF356M/NOPB LF357H LF257H LF356BH/NOPB LF356BH
描述 Operational Amplifier, 1 Func, 13000uV Offset-Max, BIPolar, PDSO8, SOP-8 OP-AMP, 13000uV OFFSET-MAX, 20MHz BAND WIDTH, MBCY8, METAL CAN, TO-5, 8 PIN OP-AMP, 6500uV OFFSET-MAX, 20MHz BAND WIDTH, MBCY8, METAL CAN, TO-5, 8 PIN OP-AMP, 6500uV OFFSET-MAX, 5MHz BAND WIDTH, MBCY8, METAL CAN, TO-5, 8 PIN Operational Amplifier, 1 Func, 6500uV Offset-Max, BIPolar, MBCY8, METAL CAN, TO-5, 8 PIN
是否无铅 不含铅 含铅 含铅 不含铅 含铅
是否Rohs认证 符合 不符合 不符合 符合 不符合
厂商名称 Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics
零件包装代码 SOIC TO-5 TO-5 TO-5 TO-5
针数 8 8 8 8 8
Reach Compliance Code unknown unknown unknown unknown unknown
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB) 0.0002 µA 0.0002 µA 0.0001 µA 0.0001 µA 0.0001 µA
标称共模抑制比 100 dB 100 dB 100 dB 100 dB 100 dB
最大输入失调电压 13000 µV 13000 µV 6500 µV 6500 µV 6500 µV
JESD-30 代码 R-PDSO-G8 O-MBCY-W8 O-MBCY-W8 O-MBCY-W8 O-MBCY-W8
JESD-609代码 e3 e0 e0 e1 e0
负供电电压上限 -18 V -18 V -22 V -22 V -22 V
标称负供电电压 (Vsup) -15 V -15 V -15 V -15 V -15 V
功能数量 1 1 1 1 1
端子数量 8 8 8 8 8
最高工作温度 70 °C 70 °C 85 °C 70 °C 70 °C
封装主体材料 PLASTIC/EPOXY METAL METAL METAL METAL
封装形状 RECTANGULAR ROUND ROUND ROUND ROUND
封装形式 SMALL OUTLINE CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
峰值回流温度(摄氏度) 260 NOT SPECIFIED NOT SPECIFIED 260 260
标称压摆率 12 V/us 50 V/us 50 V/us 12 V/us 12 V/us
供电电压上限 18 V 18 V 22 V 22 V 22 V
标称供电电压 (Vsup) 15 V 15 V 15 V 15 V 15 V
表面贴装 YES NO NO NO NO
技术 BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR
温度等级 COMMERCIAL COMMERCIAL OTHER COMMERCIAL COMMERCIAL
端子面层 Tin (Sn) TIN LEAD TIN LEAD TIN SILVER COPPER TIN LEAD
端子形式 GULL WING WIRE WIRE WIRE WIRE
端子位置 DUAL BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 40 NOT SPECIFIED NOT SPECIFIED 40 40
标称均一增益带宽 5000 kHz 20000 kHz 20000 kHz 5000 kHz 5000 kHz
湿度敏感等级 1 - - 1 1
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