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LM386MM-1

0.325 W, 1 CHANNEL, AUDIO AMPLIFIER, PDSO8
0.325 W, 1 通道, 音频放大器, PDSO8

器件类别:半导体    其他集成电路(IC)   

厂商名称:National Semiconductor(TI )

厂商官网:http://www.ti.com

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器件参数
参数名称
属性值
功能数量
1
端子数量
8
最大工作温度
70 Cel
最小工作温度
0.0 Cel
最大供电/工作电压
12 V
最小供电/工作电压
4 V
额定带宽
300 kHz
额定输出功率
0.3250 dBm
加工封装描述
SOIC-8
状态
ACTIVE
工艺
BIPOLAR
包装形状
矩形的
包装尺寸
SMALL OUTLINE
表面贴装
Yes
端子形式
GULL WING
端子间距
1.27 mm
端子涂层
锡 铅
端子位置
包装材料
塑料/环氧树脂
温度等级
COMMERCIAL
增益
46 dB
消费IC类型
音频放大器
通道数
1
文档预览
LM386 Low Voltage Audio Power Amplifier
January 2000
LM386
Low Voltage Audio Power Amplifier
General Description
The LM386 is a power amplifier designed for use in low volt-
age consumer applications. The gain is internally set to 20 to
keep external part count low, but the addition of an external
resistor and capacitor between pins 1 and 8 will increase the
gain to any value up to 200.
The inputs are ground referenced while the output is auto-
matically biased to one half the supply voltage. The quies-
cent power drain is only 24 milliwatts when operating from a
6 volt supply, making the LM386 ideal for battery operation.
Features
n
n
n
n
n
n
n
n
n
Battery operation
Minimum external parts
Wide supply voltage range: 4V–12V or 5V–18V
Low quiescent current drain: 4 mA
Voltage gains from 20 to 200
Ground referenced input
Self-centering output quiescent voltage
Low distortion
Available in 8 pin MSOP package
Applications
n
n
n
n
n
n
n
n
AM-FM radio amplifiers
Portable tape player amplifiers
Intercoms
TV sound systems
Line drivers
Ultrasonic drivers
Small servo drivers
Power converters
Equivalent Schematic and Connection Diagrams
Small Outline,
Molded Mini Small Outline,
and Dual-In-Line Packages
DS006976-2
DS006976-1
Top View
Order Number LM386M-1,
LM386MM-1, LM386N-1,
LM386N-3 or LM386N-4
See NS Package Number
M08A, MUA08A or N08E
© 2000 National Semiconductor Corporation
DS006976
www.national.com
LM386
Absolute Maximum Ratings
(Note 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
(LM386N-1, -3, LM386M-1)
Supply Voltage (LM386N-4)
Package Dissipation (Note 3)
(LM386N)
(LM386M)
(LM386MM-1)
Input Voltage
Storage Temperature
Operating Temperature
Junction Temperature
Soldering Information
15V
22V
1.25W
0.73W
0.595W
±
0.4V
−65˚C to +150˚C
0˚C to +70˚C
+150˚C
Dual-In-Line Package
Soldering (10 sec)
+260˚C
Small Outline Package
(SOIC and MSOP)
Vapor Phase (60 sec)
+215˚C
Infrared (15 sec)
+220˚C
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
Thermal Resistance
37˚C/W
θ
JC
(DIP)
107˚C/W
θ
JA
(DIP)
35˚C/W
θ
JC
(SO Package)
172˚C/W
θ
JA
(SO Package)
210˚C/W
θ
JA
(MSOP)
56˚C/W
θ
JC
(MSOP)
Electrical Characteristics
(Notes 1, 2)
T
A
= 25˚C
Parameter
Operating Supply Voltage (V
S
)
LM386N-1, -3, LM386M-1, LM386MM-1
LM386N-4
Quiescent Current (I
Q
)
Output Power (P
OUT
)
LM386N-1, LM386M-1, LM386MM-1
LM386N-3
LM386N-4
Voltage Gain (A
V
)
Bandwidth (BW)
Total Harmonic Distortion (THD)
Power Supply Rejection Ratio (PSRR)
Input Resistance (R
IN
)
Input Bias Current (I
BIAS
)
V
S
= 6V, Pins 2 and 3 Open
Note 1:
All voltages are measured with respect to the ground pin, unless otherwise specified.
Note 2:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is func-
tional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guar-
antee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is
given, however, the typical value is a good indication of device performance.
Note 3:
For operation in ambient temperatures above 25˚C, the device must be derated based on a 150˚C maximum junction temperature and 1) a thermal resis-
tance of 107˚C/W junction to ambient for the dual-in-line package and 2) a thermal resistance of 170˚C/W for the small outline package.
Conditions
Min
4
5
Typ
Max
12
18
Units
V
V
mA
mW
mW
mW
dB
dB
kHz
%
dB
kΩ
nA
V
S
= 6V, V
IN
= 0
V
S
= 6V, R
L
= 8Ω, THD = 10%
V
S
= 9V, R
L
= 8Ω, THD = 10%
V
S
= 16V, R
L
= 32Ω, THD = 10%
V
S
= 6V, f = 1 kHz
10 µF from Pin 1 to 8
V
S
= 6V, Pins 1 and 8 Open
V
S
= 6V, R
L
= 8Ω, P
OUT
= 125 mW
f = 1 kHz, Pins 1 and 8 Open
V
S
= 6V, f = 1 kHz, C
BYPASS
= 10 µF
Pins 1 and 8 Open, Referred to Output
250
500
700
4
325
700
1000
26
46
300
0.2
50
50
250
8
www.national.com
2
LM386
Application Hints
GAIN CONTROL
To make the LM386 a more versatile amplifier, two pins (1
and 8) are provided for gain control. With pins 1 and 8 open
the 1.35 kΩ resistor sets the gain at 20 (26 dB). If a capacitor
is put from pin 1 to 8, bypassing the 1.35 kΩ resistor, the
gain will go up to 200 (46 dB). If a resistor is placed in series
with the capacitor, the gain can be set to any value from 20
to 200. Gain control can also be done by capacitively cou-
pling a resistor (or FET) from pin 1 to ground.
Additional external components can be placed in parallel
with the internal feedback resistors to tailor the gain and fre-
quency response for individual applications. For example,
we can compensate poor speaker bass response by fre-
quency shaping the feedback path. This is done with a series
RC from pin 1 to 5 (paralleling the internal 15 kΩ resistor).
For 6 dB effective bass boost: R
15 kΩ, the lowest value
for good stable operation is R = 10 kΩ if pin 8 is open. If pins
1 and 8 are bypassed then R as low as 2 kΩ can be used.
This restriction is because the amplifier is only compensated
for closed-loop gains greater than 9.
INPUT BIASING
The schematic shows that both inputs are biased to ground
with a 50 kΩ resistor. The base current of the input transis-
tors is about 250 nA, so the inputs are at about 12.5 mV
when left open. If the dc source resistance driving the LM386
is higher than 250 kΩ it will contribute very little additional
offset (about 2.5 mV at the input, 50 mV at the output). If the
dc source resistance is less than 10 kΩ, then shorting the
unused input to ground will keep the offset low (about 2.5 mV
at the input, 50 mV at the output). For dc source resistances
between these values we can eliminate excess offset by put-
ting a resistor from the unused input to ground, equal in
value to the dc source resistance. Of course all offset prob-
lems are eliminated if the input is capacitively coupled.
When using the LM386 with higher gains (bypassing the
1.35 kΩ resistor between pins 1 and 8) it is necessary to by-
pass the unused input, preventing degradation of gain and
possible instabilities. This is done with a 0.1 µF capacitor or
a short to ground depending on the dc source resistance on
the driven input.
3
www.national.com
LM386
Typical Performance Characteristics
Quiescent Supply Current
vs Supply Voltage
Power Supply Rejection Ratio
(Referred to the Output)
vs Frequency
Peak-to-Peak Output Voltage
Swing vs Supply Voltage
DS006976-5
DS006976-13
DS006976-12
Voltage Gain vs Frequency
Distortion vs Frequency
Distortion vs Output Power
DS006976-14
DS006976-15
DS006976-16
Device Dissipation vs Output
Power — 4Ω Load
Device Dissipation vs Output
Power — 8Ω Load
Device Dissipation vs Output
Power — 16Ω Load
DS006976-17
DS006976-18
DS006976-19
www.national.com
4
LM386
Typical Applications
Amplifier with Gain = 20
Minimum Parts
Amplifier with Gain = 200
DS006976-4
DS006976-3
Amplifier with Gain = 50
Low Distortion Power Wienbridge Oscillator
DS006976-6
DS006976-7
Amplifier with Bass Boost
Square Wave Oscillator
DS006976-8
DS006976-9
5
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参数对比
与LM386MM-1相近的元器件有:LM386、LM386M-1、LM386N、LM386N-1、LM386N-3、LM386N-4。描述及对比如下:
型号 LM386MM-1 LM386 LM386M-1 LM386N LM386N-1 LM386N-3 LM386N-4
描述 0.325 W, 1 CHANNEL, AUDIO AMPLIFIER, PDSO8 0.325 W, 1 CHANNEL, AUDIO AMPLIFIER, PDSO8 0.325 W, 1 CHANNEL, AUDIO AMPLIFIER, PDSO8 0.325 W, 1 CHANNEL, AUDIO AMPLIFIER, PDSO8 0.325 W, 1 CHANNEL, AUDIO AMPLIFIER, PDIP8 0.325 W, 1 CHANNEL, AUDIO AMPLIFIER, PDSO8 1 W, 1 CHANNEL, AUDIO AMPLIFIER, PDIP8
端子数量 8 8 8 8 8 8 8
表面贴装 Yes Yes YES NO NO NO NO
端子形式 GULL WING GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 DUAL DUAL DUAL DUAL DUAL
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
功能数量 1 1 1 - 1 1 1
增益 46 dB 46 dB 46 dB - 46 dB 46 dB 46 dB
是否Rohs认证 - - 不符合 不符合 不符合 不符合 不符合
厂商名称 - - National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI )
包装说明 - - SOIC-8 DIP, DIP8,.3 DIP-8 DIP-8 DIP-8
Reach Compliance Code - - _compli compli _compli _compli _compli
ECCN代码 - - EAR99 - EAR99 EAR99 EAR99
标称带宽 - - 300 kHz - 300 kHz 300 kHz 300 kHz
商用集成电路类型 - - AUDIO AMPLIFIER AUDIO AMPLIFIER AUDIO AMPLIFIER AUDIO AMPLIFIER AUDIO AMPLIFIER
谐波失真 - - 10% - 10% 10% 10%
JESD-30 代码 - - R-PDSO-G8 R-PDIP-T8 R-PDIP-T8 R-PDIP-T8 R-PDIP-T8
JESD-609代码 - - e0 e0 e0 e0 e0
长度 - - 4.9 mm - 9.817 mm 9.817 mm 9.817 mm
湿度敏感等级 - - 1 - 1 1 1
信道数量 - - 1 - 1 1 1
最高工作温度 - - 70 °C 70 °C 70 °C 70 °C 70 °C
标称输出功率 - - 0.325 W - 0.325 W 0.7 W 1 W
封装主体材料 - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 - - SOP DIP DIP DIP DIP
封装等效代码 - - SOP8,.25 DIP8,.3 DIP8,.3 DIP8,.3 DIP8,.3
封装形状 - - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 - - SMALL OUTLINE IN-LINE IN-LINE IN-LINE IN-LINE
峰值回流温度(摄氏度) - - 235 - 260 NOT APPLICABLE 260
认证状态 - - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 - - 1.75 mm - 5.08 mm 5.08 mm 5.08 mm
最大压摆率 - - 8 mA - 8 mA 8 mA 8 mA
最大供电电压 (Vsup) - - 12 V - 12 V 12 V 18 V
最小供电电压 (Vsup) - - 4 V - 4 V 4 V 5 V
技术 - - BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR
端子面层 - - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子节距 - - 1.27 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm
处于峰值回流温度下的最长时间 - - 30 - 40 NOT APPLICABLE 40
宽度 - - 3.9 mm - 7.62 mm 7.62 mm 7.62 mm
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