描述 |
Small Signal Field-Effect Transistor, |
Small Signal Field-Effect Transistor, |
Small Signal Field-Effect Transistor, |
Small Signal Field-Effect Transistor, |
厂商名称 |
LRC |
LRC |
LRC |
LRC |
包装说明 |
SMALL OUTLINE, R-PDSO-G3 |
SMALL OUTLINE, R-PDSO-G3 |
SMALL OUTLINE, R-PDSO-G3 |
SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code |
unknow |
unknow |
unknow |
unknow |
配置 |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 |
60 V |
60 V |
60 V |
60 V |
最大漏极电流 (ID) |
2.6 A |
2.6 A |
2.6 A |
2.6 A |
最大漏源导通电阻 |
0.1 Ω |
0.1 Ω |
0.1 Ω |
0.1 Ω |
FET 技术 |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 |
R-PDSO-G3 |
R-PDSO-G3 |
R-PDSO-G3 |
R-PDSO-G3 |
元件数量 |
1 |
1 |
1 |
1 |
端子数量 |
3 |
3 |
3 |
3 |
工作模式 |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
封装主体材料 |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
封装形状 |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
封装形式 |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
极性/信道类型 |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
表面贴装 |
YES |
YES |
YES |
YES |
端子形式 |
GULL WING |
GULL WING |
GULL WING |
GULL WING |
端子位置 |
DUAL |
DUAL |
DUAL |
DUAL |
晶体管应用 |
SWITCHING |
SWITCHING |
SWITCHING |
SWITCHING |
晶体管元件材料 |
SILICON |
SILICON |
SILICON |
SILICON |