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MB84VD21182DA-85PBS

Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, PLASTIC, BGA-69

器件类别:存储    存储   

厂商名称:FUJITSU(富士通)

厂商官网:http://edevice.fujitsu.com/fmd/en/index.html

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
FUJITSU(富士通)
零件包装代码
BGA
包装说明
LFBGA, BGA69,10X10,32
针数
69
Reach Compliance Code
compliant
最长访问时间
85 ns
其他特性
SRAM IS CONFIGURED AS 256K X 16/512K X 8
JESD-30 代码
R-PBGA-B69
JESD-609代码
e0
长度
11 mm
内存密度
16777216 bit
内存集成电路类型
MEMORY CIRCUIT
内存宽度
16
混合内存类型
FLASH+SRAM
功能数量
1
端子数量
69
字数
1048576 words
字数代码
1000000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-25 °C
组织
1MX16
封装主体材料
PLASTIC/EPOXY
封装代码
LFBGA
封装等效代码
BGA69,10X10,32
封装形状
RECTANGULAR
封装形式
GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
3 V
认证状态
Not Qualified
座面最大高度
1.4 mm
最大压摆率
0.05 mA
最大供电电压 (Vsup)
3.3 V
最小供电电压 (Vsup)
2.7 V
标称供电电压 (Vsup)
3 V
表面贴装
YES
技术
CMOS
温度等级
OTHER
端子面层
Tin/Lead (Sn/Pb)
端子形式
BALL
端子节距
0.8 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
8 mm
参数对比
与MB84VD21182DA-85PBS相近的元器件有:MB84VD21193DA-85PBS、MB84VD21181DA-85PBS、MB84VD21183DA-85PBS、MB84VD21192DA-85PBS、MB84VD21184DA-85PBS、MB84VD21191DA-85PBS、MB84VD21194DA-85PBS。描述及对比如下:
型号 MB84VD21182DA-85PBS MB84VD21193DA-85PBS MB84VD21181DA-85PBS MB84VD21183DA-85PBS MB84VD21192DA-85PBS MB84VD21184DA-85PBS MB84VD21191DA-85PBS MB84VD21194DA-85PBS
描述 Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, PLASTIC, BGA-69 Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, PLASTIC, BGA-69 Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, PLASTIC, BGA-69 Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, PLASTIC, BGA-69 Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, PLASTIC, BGA-69 Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, PLASTIC, BGA-69 Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, PLASTIC, BGA-69 Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, PLASTIC, BGA-69
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
零件包装代码 BGA BGA BGA BGA BGA BGA BGA BGA
包装说明 LFBGA, BGA69,10X10,32 LFBGA, BGA69,10X10,32 LFBGA, BGA69,10X10,32 LFBGA, BGA69,10X10,32 LFBGA, BGA69,10X10,32 LFBGA, BGA69,10X10,32 LFBGA, BGA69,10X10,32 LFBGA, BGA69,10X10,32
针数 69 69 69 69 69 69 69 69
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant
最长访问时间 85 ns 85 ns 85 ns 85 ns 85 ns 85 ns 85 ns 85 ns
其他特性 SRAM IS CONFIGURED AS 256K X 16/512K X 8 SRAM IS CONFIGURED AS 256K X 16/512K X 8 SRAM IS CONFIGURED AS 256K X 16/512K X 8 SRAM IS CONFIGURED AS 256K X 16/512K X 8 SRAM IS CONFIGURED AS 256K X 16/512K X 8 SRAM IS CONFIGURED AS 256K X 16/512K X 8 SRAM IS CONFIGURED AS 256K X 16/512K X 8 SRAM IS CONFIGURED AS 256K X 16/512K X 8
JESD-30 代码 R-PBGA-B69 R-PBGA-B69 R-PBGA-B69 R-PBGA-B69 R-PBGA-B69 R-PBGA-B69 R-PBGA-B69 R-PBGA-B69
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0
长度 11 mm 11 mm 11 mm 11 mm 11 mm 11 mm 11 mm 11 mm
内存密度 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit
内存集成电路类型 MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT
内存宽度 16 16 16 16 16 16 16 16
混合内存类型 FLASH+SRAM FLASH+SRAM FLASH+SRAM FLASH+SRAM FLASH+SRAM FLASH+SRAM FLASH+SRAM FLASH+SRAM
功能数量 1 1 1 1 1 1 1 1
端子数量 69 69 69 69 69 69 69 69
字数 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words
字数代码 1000000 1000000 1000000 1000000 1000000 1000000 1000000 1000000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
最低工作温度 -25 °C -25 °C -25 °C -25 °C -25 °C -25 °C -25 °C -25 °C
组织 1MX16 1MX16 1MX16 1MX16 1MX16 1MX16 1MX16 1MX16
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LFBGA LFBGA LFBGA LFBGA LFBGA LFBGA LFBGA LFBGA
封装等效代码 BGA69,10X10,32 BGA69,10X10,32 BGA69,10X10,32 BGA69,10X10,32 BGA69,10X10,32 BGA69,10X10,32 BGA69,10X10,32 BGA69,10X10,32
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm
最大压摆率 0.05 mA 0.05 mA 0.05 mA 0.05 mA 0.05 mA 0.05 mA 0.05 mA 0.05 mA
最大供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
最小供电电压 (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
标称供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
表面贴装 YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 OTHER OTHER OTHER OTHER OTHER OTHER OTHER OTHER
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 BALL BALL BALL BALL BALL BALL BALL BALL
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm
厂商名称 FUJITSU(富士通) - FUJITSU(富士通) FUJITSU(富士通) FUJITSU(富士通) FUJITSU(富士通) FUJITSU(富士通) FUJITSU(富士通)
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