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MBR160G-SMA-R

1 A, 60 V, SILICON, SIGNAL DIODE, DO-204AL

器件类别:分立半导体    二极管   

厂商名称:UNISONIC TECHNOLOGIES CO.,LTD

厂商官网:http://www.unisonic.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
UNISONIC TECHNOLOGIES CO.,LTD
包装说明
R-PDSO-C2
Reach Compliance Code
compli
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE, LOW POWER LOSS
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-214AC
JESD-30 代码
R-PDSO-C2
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
最大重复峰值反向电压
60 V
表面贴装
YES
技术
SCHOTTKY
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
UNISONIC TECHNOLOGIES CO., LTD
MBR160
Preliminary
DIODE
1.0A SCHOTTKY BARRIER
RECTIFIER
DESCRIPTION
The UTC
MBR160
is a 1.0A schottky barrier rectifier, it uses
UTC’s advanced technology to provide the customers with high
surge capability, high efficiency, high current capability, low power
loss and low forward voltage drop, etc.
The UTC
MBR160
is suitable for free wheeling and polarity
protection, etc.
DO-41
+
-
SMA
(JEDEC DO-214AC)
FEATURES
* Low Reverse Current
* Low Stored Charge, Majority Carrier Conduction
* Low Power Loss/High Efficiency
* Highly Stable Oxide Passivated Junction
SYMBOL
ORDERING INFORMATION
Package
SMA
DO-41
DO-41
Pin Assignment
1
2
K
A
K
A
K
A
Packing
Tape Reel
Tape Box
Tape Reel
Ordering Number
Lead Free
Halogen Free
MBR160L-SMA-R
MBR160G-SMA-R
MBR160L-Z41-B
MBR160G-Z41-B
MBR160L-Z41-R
MBR160G-Z41-R
Note: Pin Assignment: A: Anode
K: Cathode
MBR160L-Z41-B
(1)Packing Type
(2)Package Type
(3)Lead Free
(1) B: Tape Box, R: Tape Reel
(2) Z41: DO-41, SMA: SMA
(3) L: Lead Free, G: Halogen Free
MARKING
SMA
UTC
MBR160
Date Code
L: Lead Free
G: Halogen Free
MBR160
DO-41
Cathode Band for uni-directional Only
L: Lead Free
G: Halogen Free
Date Code
Cathode Band for
uni-directional Only
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R601-260.c
MBR160
Preliminary
DIODE
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
Working Peak Reverse Voltage
V
RWM
60
V
Repetitive Peak Reverse Voltage
V
RRM
60
V
Maximum RMS Reverse Voltage
V
RMS
42
V
DC Blocking Voltage
V
R
60
V
Average Rectified Output Current (T
A
=105°C)
I
O
1.0
A
Peak Forward Surge Current 8.3ms Single Half
I
FSM
30
A
Sine-Wave Superimposed on Rated Load
Junction Temperature
T
J
-55~+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
SYMBOL
θ
JA
RATINGS
50
UNIT
°C/W
PARAMETER
Junction to Ambient
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
V
F
I
R
TEST CONDITIONS
I
F
=1.0A, T
C
=25°C
I
F
=1.0A, T
C
=125°C
Rated DC Voltage, T
C
=25°C
Rated DC Voltage, T
C
=125°C
MIN
TYP MAX UNIT
0.74
V
0.69
50
μA
10
mA
Instantaneous Forward Voltage Drop (Note 2)
Instantaneous Reverse Current (Note 2)
Notes: 1. 2.0μs Pulse Width, f = 1.0KHz.
2. Pulse Test: Pulse Width
300µs, Duty Cycle
2.0%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R601-260.c
MBR160
Preliminary
DIODE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R601-260.c
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参数对比
与MBR160G-SMA-R相近的元器件有:MBR160、MBR160L-Z41-R、MBR160G-Z41-B、MBR160G-Z41-R、MBR160L-Z41-B。描述及对比如下:
型号 MBR160G-SMA-R MBR160 MBR160L-Z41-R MBR160G-Z41-B MBR160G-Z41-R MBR160L-Z41-B
描述 1 A, 60 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 60 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 60 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 60 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 60 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 60 V, SILICON, SIGNAL DIODE, DO-204AL
是否Rohs认证 符合 - 符合 符合 符合 符合
厂商名称 UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
包装说明 R-PDSO-C2 - O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2
Reach Compliance Code compli - compli compli compli compli
ECCN代码 EAR99 - EAR99 EAR99 EAR99 EAR99
其他特性 FREE WHEELING DIODE, LOW POWER LOSS - FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS
配置 SINGLE - SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON - SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 DO-214AC - DO-41 DO-41 DO-41 DO-41
JESD-30 代码 R-PDSO-C2 - O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2
元件数量 1 - 1 1 1 1
端子数量 2 - 2 2 2 2
最高工作温度 150 °C - 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C - -55 °C -55 °C -55 °C -55 °C
最大输出电流 1 A - 1 A 1 A 1 A 1 A
封装主体材料 PLASTIC/EPOXY - UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装形状 RECTANGULAR - ROUND ROUND ROUND ROUND
封装形式 SMALL OUTLINE - LONG FORM LONG FORM LONG FORM LONG FORM
峰值回流温度(摄氏度) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
最大重复峰值反向电压 60 V - 60 V 60 V 60 V 60 V
表面贴装 YES - NO NO NO NO
技术 SCHOTTKY - SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
端子形式 C BEND - WIRE WIRE WIRE WIRE
端子位置 DUAL - AXIAL AXIAL AXIAL AXIAL
处于峰值回流温度下的最长时间 NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
外壳连接 - - ISOLATED ISOLATED ISOLATED ISOLATED
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