型号
- 型号
- 关键词
| 型号 | MJE230 | MJE231 | MJE232 | MJE233 | MJE234 | MJE235 |
|---|---|---|---|---|---|---|
| 描述 | PNP SILICON POWER TRANSISTOR | PNP SILICON POWER TRANSISTOR | PNP SILICON POWER TRANSISTOR | PNP SILICON POWER TRANSISTOR | PNP SILICON POWER TRANSISTOR | PNP SILICON POWER TRANSISTOR |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最大集电极电流 (IC) | 4 A | 4 A | 4 A | 4 A | 4 A | 4 A |
| 基于收集器的最大容量 | 70 pF | 70 pF | 70 pF | 70 pF | 70 pF | 70 pF |
| 集电极-发射极最大电压 | 40 V | 40 V | 40 V | 60 V | 60 V | 60 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 20 | 20 | 10 | 20 | 20 | 10 |
| JEDEC-95代码 | TO-126 | TO-126 | TO-126 | TO-126 | TO-126 | TO-126 |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 3 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 最低工作温度 | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | PNP | PNP | PNP | PNP | PNP | PNP |
| 功耗环境最大值 | 1.5 W | 1.5 W | 1.5 W | 1.5 W | 1.5 W | 1.5 W |
| 最大功率耗散 (Abs) | 15 W | 15 W | 15 W | 15 W | 15 W | 15 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 10 MHz | 10 MHz | 10 MHz | 10 MHz | 10 MHz | 10 MHz |
| VCEsat-Max | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |