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MMBT3646S62Z

Small Signal Bipolar Transistor, 0.3A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB, SOT-23, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:Fairchild

厂商官网:http://www.fairchildsemi.com/

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器件参数
参数名称
属性值
厂商名称
Fairchild
零件包装代码
SOT-23
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
最大集电极电流 (IC)
0.3 A
集电极-发射极最大电压
15 V
配置
SINGLE
最小直流电流增益 (hFE)
15
JEDEC-95代码
TO-236AB
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管应用
SWITCHING
晶体管元件材料
SILICON
最大关闭时间(toff)
28 ns
最大开启时间(吨)
18 ns
文档预览
MMBT3646
MMBT3646
Switching Transistor
3
2
SOT-23
Mark: 23
1. Base 2. Emitter 3. Collector
1
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
P
D
T
J
, T
STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Dissipation
- Derate above 25°C
- Continuous
@ T
A
=25°C
Parameter
Value
15
40
40
5
300
625
5
150
mA
mW
mW/°C
°C
Units
V
V
V
Operating and Storage Junction Temperature Range
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CES
V
CEO(
SUS
)
V
(BR)CBO
V
(BR)EBO
I
CES
Parameter
Min.
40
15
40
5
0.5
3
30
25
15
120
Typ.
Max.
Units
V
V
V
V
µA
Collector-Emitter Breakdown Voltage (I
C
= 100µAdc, V
BE
= 0)
Collector-Emitter Sustaining Voltage (1) (I
C
= 10mAdc, I
B
= 0)
Collector-Base Breakdown Voltage (I
C
= 100µAdc, I
E
= 0)
Emitter-Base Breakdown Voltage (I
E
= 100µAdc, I
C
= 0)
Collector Cut-off Current (V
CE
= 20Vdc, V
BE
= 0)
(V
CE
= 20Vdc, V
BE
= 0, T
A
= 65°C)
DC Current Gain (I
C
= 30mAdc, V
CE
= 0.4Vdc)
(I
C
= 100mAdc, V
CE
= 0.5Vdc)
(I
C
= 300mAdc, V
CE
= 1Vdc)
Collector-Emitter Saturation Voltage (I
C
= 30mAdc, I
B
= 3mAdc)
(I
C
= 100mAdc, I
B
= 10mAdc)
(I
C
= 300mAdc, I
B
= 30mAdc)
(I
C
= 30mA, I
B
= 3mA, T
A
=65°C)
Base-Emitter Saturation Voltage (I
C
= 30mAdc, I
B
= 3mAdc)
(I
C
= 100mAdc, I
B
= 10mAdc)
(I
C
= 300mAdc, I
B
= 30mAdc)
0.73
On Characteristics (1)
h
FE
V
CE(sat)
0.2
0.28
0.5
0.3
0.95
1.2
1.7
V
V
BE(sat)
V
©2001 Fairchild Semiconductor Corporation
Rev. A, August 2001
MMBT3646
Electrical Characteristics
T
C
=25°C unless otherwise noted) (Continued)
Symbol
Small-Signal Characteristics
C
obo
C
ibo
Parameter
Min.
Typ.
Max.
5
8
Units
pF
pF
Output Capacitance
(V
CE
= 5Vdc, I
E
= 0, f = 1MHz)
Input Capacitance
(V
EB
= 0.5Vdc, I
C
= 0, f = 1MHz)
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Fall Time
Storge Time
V
CC
= 10Vdc, I
C
= 300mAdc,
I
B1
= I
B2
= 30mAdc
V
CC
= 10Vdc, I
C
= 300mAdc,
I
B1
= 30mAdc, V
CE(off)
= 3V
Switching Characteristics
t
on
t
d
t
r
t
off
t
f
t
s
18
10
15
28
15
20
ns
ns
ns
ns
ns
ns
Thermal Characteristics
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Min.
Typ.
Max.
200
83.3
Units
°C
°C
©2001 Fairchild Semiconductor Corporation
Rev. A, August 2001
MMBT3646
Package Demensions
SOT-23
0.20 MIN
2.40
±0.10
0.40
±0.03
1.30
±0.10
0.45~0.60
0.03~0.10
0.38 REF
0.40
±0.03
0.96~1.14
2.90
±0.10
0.12
–0.023
+0.05
0.95
±0.03
0.95
±0.03
1.90
±0.03
0.508REF
0.97REF
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A, August 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST
®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H4
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参数对比
与MMBT3646S62Z相近的元器件有:MMBT3646L99Z、MMBT3646D87Z。描述及对比如下:
型号 MMBT3646S62Z MMBT3646L99Z MMBT3646D87Z
描述 Small Signal Bipolar Transistor, 0.3A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.3A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.3A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB, SOT-23, 3 PIN
厂商名称 Fairchild Fairchild Fairchild
零件包装代码 SOT-23 SOT-23 SOT-23
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
针数 3 3 3
Reach Compliance Code unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99
最大集电极电流 (IC) 0.3 A 0.3 A 0.3 A
集电极-发射极最大电压 15 V 15 V 15 V
配置 SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 15 15 15
JEDEC-95代码 TO-236AB TO-236AB TO-236AB
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
元件数量 1 1 1
端子数量 3 3 3
最高工作温度 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES
端子形式 GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON
最大关闭时间(toff) 28 ns 28 ns 28 ns
最大开启时间(吨) 18 ns 18 ns 18 ns
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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