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MOCD213-MR2

Optoelectronic Device

器件类别:光电子/LED    光电   

厂商名称:Fairchild

厂商官网:http://www.fairchildsemi.com/

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器件参数
参数名称
属性值
Reach Compliance Code
unknown
当前传输比率-最小值
100%
最大正向电流
0.06 A
最大正向电压
1.55 V
最大绝缘电压
2500 V
安装特点
SURFACE MOUNT
元件数量
2
最大通态电流
0.15 A
最高工作温度
100 °C
最低工作温度
-40 °C
最大功率耗散
0.15 W
表面贴装
YES
Base Number Matches
1
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DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD213-M
DESCRIPTION
The MOCD213-M consist of two gallium arsenide infrared emitting diodes optically coupled to
two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic
package. It is ideally suited for high density applications and eliminates the need for through-
the-board mounting.
FEATURES
• U.L. Recognized (File #E90700, Volume 2)
• VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOCD213V-M)
• Dual Channel Coupler
• Convenient Plastic SOIC-8 Surface Mountable Package Style
• Minimum Current Transfer Ratio 100% with Input Current of 10 mA
• Minimum V
(BR)CEO
of 70 Volts Guaranteed
• Standard SOIC-8 Footprint, with 0.050” Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation of 2500 V
AC(rms)
Guaranteed
ANODE 2 3
6 COLLECTOR 2
CATHODE 1 2
7 EMITTER 1
ANODE 1 1
8 COLLECTOR 1
APPLICATIONS
• Feedback control circuits
• Interfacing and coupling systems of different potentials and impedances
• General purpose switching circuits
• Monitor and detection circuits
CATHODE 2 4
5 EMITTER 2
ABSOLUTE MAXIMUM RATINGS
Rating
EMITTER
Forward Current - Continuous
(T
A
= 25°C Unless otherwise specified)
Symbol
I
F
I
F
(pk)
V
R
P
D
V
CEO
V
CBO
V
ECO
I
C
P
D
Value
60
1.0
6.0
90
0.8
70
70
7.0
150
150
1.76
2500
250
2.94
-40 to +100
-40 to +150
260
Unit
mA
A
V
mW
mW/°C
V
V
V
mA
mW
mW/°C
Vac(rms)
mW
mW/°C
°C
°C
°C
Forward Current - Peak (PW = 100 µs, 120 pps)
Reverse Voltage
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Collector Current-Continuous
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
TOTAL DEVICE
Input-Output Isolation Voltage
(1,2,3)
V
ISO
(f = 60 Hz, 1 min. Duration)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
(1/16” from case, 10 sec. duration)
2001 Fairchild Semiconductor Corporation
DS300272
2/6/02
1 OF 7
P
D
T
A
T
stg
T
L
www.fairchildsemi.com
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD213-M
ELECTRICAL CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Reverse Leakage Current
Capacitance
DETECTOR
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Capacitance
COUPLED
Output Collector Current
(4)
(T
A
= 25°C unless otherwise specified)
Test Conditions
I
F
= 30 mA
V
R
= 6.0 V
Symbol
V
F
I
R
C
Min
70
7.0
100
2500
10
11
Typ**
1.25
0.001
18
1.0
1.0
120
7.8
7.0
0.15
3.0
2.8
1.6
2.2
0.2
Max
1.55
100
50
0.4
Unit
V
µA
pF
nA
µA
V
V
pF
%
V
µs
µs
µs
µs
Vac(rms)
!
pF
V
CE
= 10 V, T
A
= 25°C
V
CE
= 10 V, T
A
= 100°C
I
C
= 100
µA
I
E
= 100
µA
f = 1.0 MHz, V
CE
= 0 V
I
F
= 10 mA, V
CE
= 5 V
I
C
= 2.0 mA, I
F
= 10 mA
I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
(Fig.6)
I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
(Fig.6)
I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
(Fig.6)
I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
(Fig.6)
I
CEO1
I
CEO2
BV
CEO
BV
ECO
C
CE
CTR
V
CE (sat)
t
on
t
off
t
r
t
f
V
ISO
R
ISO
C
ISO
Collector-Emitter Saturation Voltage
Turn-On Time
Turn-Off Time
Rise Time
Fall Time
Isolation Surge Voltage
Isolation Resistance
(2)
(2)
(1,2,3)
f = 60 Hz, t = 1 min.
V
I-O
= 500 V
V
I-O
= 0 V, f = 1 MHz
Isolation Capacitance
** Typical values at T
A
= 25°C
NOTE:
1. Input-Output Isolation Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, Pins 1, 2, 3 and 4 are common and Pins 5, 6, 7 and 8 are common.
3. V
ISO
rating of 2500 V
AC(rms)
for t = 1 min. is equivalent to a rating of 3,000 V
AC(rms)
for t = 1 sec.
4. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
www.fairchildsemi.com
2 OF 7
2/6/02
DS300272
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD213-M
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
10
Fig. 2 Output Curent vs. Input Current
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.7
V
F
- FORWARD VOLTAGE (V)
1.6
1.5
1
V
CE
= 5V
NORMALIZED TO I
F
= 10mA
1.4
T
A
= 55 C
1.3
T
A
= 25 C
1.2
0.1
1.1
T
A
= 100 C
1.0
1
10
100
I
F
- LED FORWARD CURRENT (mA)
0.01
0.1
1
10
100
Fig. 3 Output Current vs. Ambient Temperature
10
I
F
- LED INPUT CURRENT (mA)
Fig. 4 Output Current vs. Collector - Emitter Voltage
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.6
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.4
1.2
1.0
1
0.8
0.6
0.4
0.2
I
F
= 10mA
NORMALIZED TO V
CE
= 5V
0.0
0
1
2
3
4
5
6
7
8
9
10
NORMALIZED TO T
A
= 25
o
C
0.1
-80
-60
-40
-20
0
20
40
60
o
80
100
120
T
A
- AMBIENT TEMPERATURE ( C)
V
CE
- COLLECTOR -EMITTER VOLTAGE (V)
Fig. 5 Dark Current vs. Ambient Temperature
10000
I
CEO
- COLLECTOR -EMITTER DARK CURRENT (nA)
1000
V
CE
=10V
100
10
1
0.1
0
20
40
60
o
80
100
T
A
- AMBIENT TEMPERATURE ( C)
DS300272
2/6/02
3 OF 7
www.fairchildsemi.com
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD213-M
TEST CIRCUIT
V
CC
= 10V
WAVE FORMS
INPUT PULSE
I
F
INPUT
R
BE
I
C
R
L
10%
90%
t
r
t
on
Adjust I
F
to produce I
C
= 2 mA
t
f
t
off
OUTPUT PULSE
OUTPUT
Figure 6. Switching Time Test Circuit and Waveforms
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4 OF 7
2/6/02
DS300272
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD213-M
Package Dimensions (Surface Mount)
8 - Pin Small Outline
SEATING PLANE
0.164 (4.16)
0.144 (3.66)
0.024 (0.61)
Pin 1
0.202 (5.13)
0.182 (4.63)
0.019 [0.48]
0.060 (1.52)
0.275 (6.99)
0.010 (0.25)
0.006 (0.16)
0.155 (3.94)
0.143 (3.63)
0.123 (3.13)
0.021 (0.53)
0.011 (0.28)
0.008 (0.20)
0.003 (0.08)
0.050 (1.27)
TYP
0.244 (6.19)
0.224 (5.69)
0.050 (1.27)
Lead Coplanarity : 0.004 (0.10) MAX
DS300272
2/6/02
5 OF 7
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参数对比
与MOCD213-MR2相近的元器件有:MOCD213-MR1、MOCD213V-MR2V、MOCD213V-MR1V。描述及对比如下:
型号 MOCD213-MR2 MOCD213-MR1 MOCD213V-MR2V MOCD213V-MR1V
描述 Optoelectronic Device Optoelectronic Device Optoelectronic Device Optoelectronic Device
Reach Compliance Code unknown unknown unknown unknow
当前传输比率-最小值 100% 100% 100% 100%
最大正向电流 0.06 A 0.06 A 0.06 A 0.06 A
最大正向电压 1.55 V 1.55 V 1.55 V 1.55 V
最大绝缘电压 2500 V 2500 V 2500 V 2500 V
安装特点 SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT
元件数量 2 2 2 2
最大通态电流 0.15 A 0.15 A 0.15 A 0.15 A
最高工作温度 100 °C 100 °C 100 °C 100 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C
最大功率耗散 0.15 W 0.15 W 0.15 W 0.15 W
表面贴装 YES YES YES YES
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