MR1A16A
128Kx16 MRAM Memory
Features
•Fast 35 ns Read/Write Cycle
• SRAM Compatible Timing and Pin-out Uses Existing SRAM
Controllers Without Redesign
• Unlimited Read & Write Endurance
• Data Always Non-volatile for >20-years at Temperature
• One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System
for Simpler, More Efficient Design
• Replace battery-backed SRAM solutions with MRAM to eliminate
battery assembly, reliability, and liability issues
• 3.3 Volt Power Supply
• Automatic Data Protection on Power Loss
• Commercial, Industrial, Extended Temperatures
• RoHS-Compliant SRAM-compatible TSOPII Package
• RoHS-Compliant SRAM-compatible BGA Package Shrinks Board Area
By Three Times
44-TSOP
48-BGA
Introduction
The MR1A16A is a 2,097,152-bit magnetoresistive random access memory (MRAM) device organized as
131,072 words of 16 bits. The MR1A16A offers SRAM compatible 35 ns read/write timing with
unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically
protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of
specification. The MR1A16A is the ideal memory solution for applications that must permanently store
and retrieve critical data and programs quickly.
The MR1A16A is available in small footprint 400-mil, 44-lead plastic small-outline TSOP type-II package
or 8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. These packages are
compatible with similar low-power SRAM products and other non-volatile RAM products.
The MR1A16A provides highly reliable data storage over a wide range of temperatures. The product is
∘
∘
offered with commercial temperature (0 to +70 C), industrial temperature (-40 to +85 C), and
∘
extended temperature (-40 to +105 C) range options.
EverSpin Technologies
Data Sheet: Advance Information
1
Document Number: MR1A16A
Rev. 4, 9/2008
Device Pin Assignment
48-Pin BGA
44-Pin TSOP Type II
EverSpin Technologies
Data Sheet: Advance Information
2
Document Number: MR1A16A
Rev. 4, 9/2008
Electrical Specifications
Absolute Maximum Ratings
This device contains circuitry to protect the inputs against damage caused by high static voltages or
electric fields; however, it is advised that normal precautions be taken to avoid application of any
voltage greater than maximum rated voltages to these high-impedance (Hi-Z) circuits.
The device also contains protection against external magnetic fields. Precautions should be taken
to avoid application of any magnetic field more intense than the maximum field intensity specified
in the maximum ratings.
EverSpin Technologies
Data Sheet: Advance Information
3
Document Number: MR1A16A
Rev. 4, 9/2008
Power Up and Power Down Sequencing
MRAM is protected from write operations whenever V
DD
is less than V
WI
. As soon as V
DD
exceeds V
DDmin
, there is a startup time of 2 ms before read or write operations can start.
This time allows memory power supplies to stabilize. The /E and /W control signals should
track V
DD
on power up to V
DD
-0.2v or V
IH
(whichever is lower) and remain high for the
startup time. In most systems, this means that these signals should be pulled up with a
resistor so that signal remains high if the driving signal is Hi-Z during power up. Any logic
that drives /E and /W should hold the signals high with a power-on reset signal for longer
than the startup time. During power loss or brownout where V
DD
goes below V
WI
, writes are
protected and a startup time must be observed when power returns above V
DDmin
.
EverSpin Technologies
Data Sheet: Advance Information
4
Document Number: MR1A16A
Rev. 4, 9/2008
EverSpin Technologies
Data Sheet: Advance Information
5
Document Number: MR1A16A
Rev. 4, 9/2008