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MR1A16AVYS35

Memory Circuit, 128KX16, CMOS, PDSO44, 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44

器件类别:存储    存储   

厂商名称:Everspin Technologies

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Everspin Technologies
零件包装代码
TSOP2
包装说明
TSOP2, TSOP44,.46,32
针数
44
Reach Compliance Code
compliant
ECCN代码
EAR99
最长访问时间
35 ns
JESD-30 代码
R-PDSO-G44
长度
18.41 mm
内存密度
2097152 bit
内存集成电路类型
MEMORY CIRCUIT
内存宽度
16
功能数量
1
端子数量
44
字数
131072 words
字数代码
128000
工作模式
ASYNCHRONOUS
最高工作温度
105 °C
最低工作温度
-40 °C
组织
128KX16
封装主体材料
PLASTIC/EPOXY
封装代码
TSOP2
封装等效代码
TSOP44,.46,32
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
3.3 V
认证状态
Not Qualified
座面最大高度
1.2 mm
最大待机电流
0.028 A
最大压摆率
0.165 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
GULL WING
端子节距
0.8 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
10.16 mm
文档预览
MR1A16A
128Kx16 MRAM Memory
Features
•Fast 35 ns Read/Write Cycle
• SRAM Compatible Timing and Pin-out Uses Existing SRAM
Controllers Without Redesign
• Unlimited Read & Write Endurance
• Data Always Non-volatile for >20-years at Temperature
• One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System
for Simpler, More Efficient Design
• Replace battery-backed SRAM solutions with MRAM to eliminate
battery assembly, reliability, and liability issues
• 3.3 Volt Power Supply
• Automatic Data Protection on Power Loss
• Commercial, Industrial, Extended Temperatures
• RoHS-Compliant SRAM-compatible TSOPII Package
• RoHS-Compliant SRAM-compatible BGA Package Shrinks Board Area
By Three Times
44-TSOP
48-BGA
Introduction
The MR1A16A is a 2,097,152-bit magnetoresistive random access memory (MRAM) device organized as
131,072 words of 16 bits. The MR1A16A offers SRAM compatible 35 ns read/write timing with
unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically
protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of
specification. The MR1A16A is the ideal memory solution for applications that must permanently store
and retrieve critical data and programs quickly.
The MR1A16A is available in small footprint 400-mil, 44-lead plastic small-outline TSOP type-II package
or 8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. These packages are
compatible with similar low-power SRAM products and other non-volatile RAM products.
The MR1A16A provides highly reliable data storage over a wide range of temperatures. The product is
offered with commercial temperature (0 to +70 C), industrial temperature (-40 to +85 C), and
extended temperature (-40 to +105 C) range options.
EverSpin Technologies
Data Sheet: Advance Information
1
Document Number: MR1A16A
Rev. 4, 9/2008
Device Pin Assignment
48-Pin BGA
44-Pin TSOP Type II
EverSpin Technologies
Data Sheet: Advance Information
2
Document Number: MR1A16A
Rev. 4, 9/2008
Electrical Specifications
Absolute Maximum Ratings
This device contains circuitry to protect the inputs against damage caused by high static voltages or
electric fields; however, it is advised that normal precautions be taken to avoid application of any
voltage greater than maximum rated voltages to these high-impedance (Hi-Z) circuits.
The device also contains protection against external magnetic fields. Precautions should be taken
to avoid application of any magnetic field more intense than the maximum field intensity specified
in the maximum ratings.
EverSpin Technologies
Data Sheet: Advance Information
3
Document Number: MR1A16A
Rev. 4, 9/2008
Power Up and Power Down Sequencing
MRAM is protected from write operations whenever V
DD
is less than V
WI
. As soon as V
DD
exceeds V
DDmin
, there is a startup time of 2 ms before read or write operations can start.
This time allows memory power supplies to stabilize. The /E and /W control signals should
track V
DD
on power up to V
DD
-0.2v or V
IH
(whichever is lower) and remain high for the
startup time. In most systems, this means that these signals should be pulled up with a
resistor so that signal remains high if the driving signal is Hi-Z during power up. Any logic
that drives /E and /W should hold the signals high with a power-on reset signal for longer
than the startup time. During power loss or brownout where V
DD
goes below V
WI
, writes are
protected and a startup time must be observed when power returns above V
DDmin
.
EverSpin Technologies
Data Sheet: Advance Information
4
Document Number: MR1A16A
Rev. 4, 9/2008
EverSpin Technologies
Data Sheet: Advance Information
5
Document Number: MR1A16A
Rev. 4, 9/2008
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参数对比
与MR1A16AVYS35相近的元器件有:MR1A16ACMA35、MR1A16ACYS35、MR1A16ACYS35R、MR1A16AVYS35R、MR1A16AVMA35、MR1A16AYS35、MR1A16AYS35R、MR1A16AMA35。描述及对比如下:
型号 MR1A16AVYS35 MR1A16ACMA35 MR1A16ACYS35 MR1A16ACYS35R MR1A16AVYS35R MR1A16AVMA35 MR1A16AYS35 MR1A16AYS35R MR1A16AMA35
描述 Memory Circuit, 128KX16, CMOS, PDSO44, 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44 Memory Circuit, 128KX16, CMOS, PBGA48, 8 X 8 MM, ROHS COMPLIANT, FBGA-48 Memory Circuit, 128KX16, CMOS, PDSO44, 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44 Memory Circuit, 128KX16, CMOS, PDSO44, 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44 Memory Circuit, 128KX16, CMOS, PDSO44, 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44 Memory Circuit, 128KX16, CMOS, PBGA48, 8 X 8 MM, ROHS COMPLIANT, FBGA-48 Memory Circuit, 128KX16, CMOS, PDSO44, 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44 Memory Circuit, 128KX16, CMOS, PDSO44, 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44 Memory Circuit, 128KX16, CMOS, PBGA48, 8 X 8 MM, ROHS COMPLIANT, FBGA-48
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合 符合
零件包装代码 TSOP2 BGA TSOP2 TSOP2 TSOP2 BGA TSOP2 TSOP2 BGA
包装说明 TSOP2, TSOP44,.46,32 LFBGA, TSOP2, TSOP44,.46,32 TSOP2, TSOP2, LFBGA, TSOP2, TSOP44,.46,32 TSOP2, LFBGA,
针数 44 48 44 44 44 48 44 44 48
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
JESD-30 代码 R-PDSO-G44 S-PBGA-B48 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44 S-PBGA-B48 R-PDSO-G44 R-PDSO-G44 S-PBGA-B48
长度 18.41 mm 8 mm 18.41 mm 18.41 mm 18.41 mm 8 mm 18.41 mm 18.41 mm 8 mm
内存密度 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit
内存集成电路类型 MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT
内存宽度 16 16 16 16 16 16 16 16 16
功能数量 1 1 1 1 1 1 1 1 1
端子数量 44 48 44 44 44 48 44 44 48
字数 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
字数代码 128000 128000 128000 128000 128000 128000 128000 128000 128000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 105 °C 85 °C 85 °C 85 °C 105 °C 105 °C 70 °C 70 °C 70 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C - - -
组织 128KX16 128KX16 128KX16 128KX16 128KX16 128KX16 128KX16 128KX16 128KX16
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSOP2 LFBGA TSOP2 TSOP2 TSOP2 LFBGA TSOP2 TSOP2 LFBGA
封装形状 RECTANGULAR SQUARE RECTANGULAR RECTANGULAR RECTANGULAR SQUARE RECTANGULAR RECTANGULAR SQUARE
封装形式 SMALL OUTLINE, THIN PROFILE GRID ARRAY, LOW PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE GRID ARRAY, LOW PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度(摄氏度) NOT SPECIFIED 260 NOT SPECIFIED 260 260 260 NOT SPECIFIED 260 260
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.2 mm 1.35 mm 1.2 mm 1.2 mm 1.2 mm 1.35 mm 1.2 mm 1.2 mm 1.35 mm
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 GULL WING BALL GULL WING GULL WING GULL WING BALL GULL WING GULL WING BALL
端子节距 0.8 mm 0.75 mm 0.8 mm 0.8 mm 0.8 mm 0.75 mm 0.8 mm 0.8 mm 0.75 mm
端子位置 DUAL BOTTOM DUAL DUAL DUAL BOTTOM DUAL DUAL BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED 40 NOT SPECIFIED 40 40 40 NOT SPECIFIED 40 40
宽度 10.16 mm 8 mm 10.16 mm 10.16 mm 10.16 mm 8 mm 10.16 mm 10.16 mm 8 mm
厂商名称 Everspin Technologies - Everspin Technologies Everspin Technologies Everspin Technologies Everspin Technologies Everspin Technologies Everspin Technologies Everspin Technologies
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