MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF5S21150/D
The RF MOSFET Line
RF Power Field Effect Transistors MRF5S21150R3
N - Channel Enhancement - Mode Lateral MOSFETs
MRF5S21150SR3
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
Typical 2 - carrier W - CDMA Performance for V
DD
= 28 Volts,
I
DQ
= 1300 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1
-
5 MHz
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability
on CCDF.
Output Power — 33 Watts Avg.
Power Gain — 12.5 dB
Efficiency — 25%
IM3 — - 37 dBc
ACPR — - 39 dBc
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2170 MHz, 33 W AVG.,
2 x W - CDMA, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465B - 03, STYLE 1
NI - 880
MRF5S21150R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S21150SR3
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
CW
Value
65
- 0.5, +15
367
2.1
- 65 to +150
200
125
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Watts
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 125 W CW
Case Temperature 80°C, 33 W CW
Symbol
R
θJC
Value (1)(2)
0.47
0.53
Unit
°C/W
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
(2) Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MOTOROLA RF
Motorola, Inc. 2004
DEVICE DATA
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MRF5S21150R3 MRF5S21150SR3
1
Freescale Semiconductor, Inc.
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M3 (Minimum)
C7 (Minimum)
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Freescale Semiconductor, Inc...
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 360
µAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1300 mAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3.6 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3.6 Adc)
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
3.2
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.5
—
—
—
—
3.7
0.26
9
3.5
—
0.3
—
Vdc
Vdc
Vdc
S
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and
IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 33 W Avg., I
DQ
= 1300 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 33 W Avg., I
DQ
= 1300 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 33 W Avg., I
DQ
= 1300 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz BW at f1 - 10 MHz and f2 +10 MHz
referenced to carrier channel power.)
Adjacent Channel Power Ratio
(V
DD
= 28 Vdc, P
out
= 33 W Avg., I
DQ
= 1300 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz at f1 - 5 MHz and f2 +5 MHz.)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 33 W Avg., I
DQ
= 1300 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
(1) Part is internally matched both on input and output.
G
ps
11
12.5
—
dB
η
23
25
—
%
IM3
- 37
- 35
dBc
ACPR
—
- 39
- 37
dBc
IRL
—
- 12
-9
dB
MRF5S21150R3 MRF5S21150SR3
2
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
R1
V
bias
+
C1
R2
C5
C6
Z6
RF
INPUT
Z1
C2
Z2
Z3
C4
Z4
C3
Z5
Z8
Z11
Z7
DUT
C8
C14
C7
+
C15
+
C16
C13
Z9
Z10
Z12
C9
C19
Z13
Z14
C17
C18
Z15
Z16
Z17
RF
OUTPUT
C10
+
C11
+
C12
+
C20
V
supply
Freescale Semiconductor, Inc...
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
Z9
0.500″ x 0.083″ Microstrip
0.505″ x 0.083″ Microstrip
0.536″ x 0.083″ Microstrip
0.776″ x 0.083″ Microstrip
0.119″ x 1.024″ Microstrip
0.749″ x 0.083″ Microstrip
0.117″ x 1.024″ Microstrip
0.117″ x 1.100″ Microstrip
Z10, Z11
Z12
Z13
Z14
Z15, Z16
Z17
PCB
0.709″ x 0.083″ Microstrip
0.415″ x 1.100″ Microstrip
0.874″ x 0.083″ Microstrip
1.182″ x 0.083″ Microstrip
0.070″ x 0.220″ Microstrip
0.430″ x 0.083″ Microstrip
Taconic TLX8, 0.030″,
ε
r
= 2.55
Figure 1. MRF5S21150 Test Circuit Schematic
Table 1. MRF5S21150 Test Circuit Component Designations and Values
Part
C1
C2, C6, C8, C9, C13, C18,
C19
C3,C4
C5, C7, C10, C14
C11, C12, C15, C16
C17
C20
R1, R2
Description
22
µF,
35 V Tantalum Capacitor
6.8 pF 100B Chip Capacitors
1.8 pF 100B Chip Capacitors
220 nF Chip Capacitors (1812)
10
µF,
35 V Tantalum Capacitors
0.3 pF Chip Capacitor
470
µF,
63 V Electrolytic Capacitor, Radial
10 kW, 1/4 W Chip Resistors
Value, P/N or DWG
TAJE226M035R
100B6R8CW
100B1R8BW
1812Y224KXA
293D1106X9035D
100B0R3BW
13661471
Manufacturer
AVX
ATC
ATC
Vishay - Vitramon
Vishay - Sprague
ATC
Philips
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF5S21150R3 MRF5S21150SR3
3
Freescale Semiconductor, Inc.
C20
C5
R1
C9
C10
C11 C12
C1
R2
C6
C19
CUT OUT AREA
C2
C4
C3
C8
C17
C18
Freescale Semiconductor, Inc...
C7
C13
C14
C15 C16
MRF5S21150
Rev 0
Figure 2. MRF5S21150 Test Circuit Component Layout
MRF5S21150R3 MRF5S21150SR3
4
For More Information On This Product,
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
13
12
G ps , POWER GAIN (dB)
11
10
9
8
7
6
IM3
ACPR
IRL
G
ps
η
V
DD
= 28 Vdc, P
out
= 33 W (Avg.), I
DQ
= 1300 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
35
30
25
20
−28
−32
−36
−40
2100
2120
2140
2160
2180
2200
−44
2220
η
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−10
−15
−20
−25
−30
5
2060
2080
f, FREQUENCY (MHz)
Freescale Semiconductor, Inc...
Figure 3. 2 - Carrier W - CDMA Broadband Performance
14
I
DQ
= 1900 mA
G ps , POWER GAIN (dB)
13
1600 mA
1300 mA
12
1000 mA
IM3, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−25
−30
1900 mA
−35
I
DQ
= 700 mA
−40
−45
−50
−55
−60
−65
1
1000 mA
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
10
100
1000
1600 mA
1300 mA
11
700 mA
10
1
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
10
100
1000
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
−25
−30
−35
−40
5th Order
−45
7th Order
−50
−55
−60
0.1
V
DD
= 28 Vdc, P
out
= 150 W (PEP), I
DQ
= 1300 mA
Two−Tone Measurements, Center Frequency = 2140 MHz
1
10
100
3rd Order
Pout , OUTPUT POWER (dBm)
58
57
56
55
54
53
52
51
50
49
48
35
36
37
38
39
40
41
42
P1dB = 52.95 dBm (197 W)
P3dB = 53.58 dBm (228 W)
IRL, INPUT RETURN LOSS (dB)
Ideal
Actual
V
DD
= 28 Vdc, I
DQ
= 1300 mA
Pulsed CW, 5
µsec(on),
1 msec(off)
Center Frequency = 2140 MHz
43
44
45
46
47
TWO−TONE SPACING (MHz)
P
in
, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF5S21150R3 MRF5S21150SR3
5
