Freescale Semiconductor
Technical Data
MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration
PCN12895 for more details. MRF6S9060NBR1 no longer manufactured.
Document Number: MRF6S9060N
Rev. 4, 8/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
•
Typical Single - Carrier N - CDMA Performance @ 880 MHz, V
DD
= 28 Volts,
I
DQ
= 450 mA, P
out
= 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 21.4 dB
Drain Efficiency — 32.1%
ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth
GSM EDGE Application
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 500 mA,
P
out
= 21 Watts Avg., Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
•
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 500 mA, P
out
= 60 Watts,
Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 63%
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Integrated ESD Protection
•
225°C Capable Plastic Package
•
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
•
TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
•
TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
MRF6S9060NR1
MRF6S9060NBR1
ARCHIVE INFORMATION
CASE 1265 - 09, STYLE 1
TO - 270- 2
PLASTIC
MRF6S9060NR1
CASE 1337 - 04, STYLE 1
TO - 272- 2
PLASTIC
MRF6S9060NBR1
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, + 12
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
©
Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved.
MRF6S9060NR1 MRF6S9060NBR1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
880 MHz, 14 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 60 W CW
Case Temperature 80°C, 14 W CW
Symbol
R
θJC
Value
(1,2)
0.77
0.88
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
3
Package Peak Temperature
260
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
°C
ARCHIVE INFORMATION
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μA)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 450 mAdc, Measured in Functional Test)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1.5 Adc)
Dynamic Characteristics
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
oss
C
rss
C
iss
—
—
—
33
1.4
106
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
—
—
2
2.9
0.18
3
—
0.4
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 450 mA, P
out
= 14 W Avg., f = 880 MHz, Single - Carrier
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @
±750
kHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
ACPR
IRL
20.5
30.5
—
—
21.4
32.1
- 47.6
- 15.3
23.5
—
- 45
-9
dB
%
dBc
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MRF6S9060NR1 MRF6S9060NBR1
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 ohm system)
V
DD
= 28 Vdc, I
DQ
= 500 mA, P
out
= 21 W Avg., f = 921 - 960 MHz, GSM EDGE Signal
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
G
ps
η
D
EVM
SR1
SR2
—
—
—
—
—
20
46
1.5
- 62
- 78
—
—
—
—
—
dB
%
%
dBc
dBc
Typical CW Performances
(In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 ohm system) V
DD
= 28 Vdc,
I
DQ
= 500 mA, P
out
= 60 W, f = 921 - 960 MHz
Power Gain
Drain Efficiency
G
ps
η
D
IRL
P1dB
—
—
—
—
20
63
- 12
67
—
—
—
—
dB
%
dB
W
ARCHIVE INFORMATION
Input Return Loss
P
out
@ 1 dB Compression Point
(f = 940 MHz)
MRF6S9060NR1 MRF6S9060NBR1
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
B1
R1
V
BIAS
+
C9
RF
INPUT
+
C7
R2
R3
C8
L1
Z10
Z1
C1
C2
C3
C4
C5
Z2
Z3
Z4
Z5
Z6
Z7
Z8
C6
Z9
C10
DUT
C11 L2
Z11
B2
+
C15
C16
+
C17
+
C19
R4
V
SUPPLY
C18
RF
Z15 OUTPUT
Z12
Z13
Z14
C14
C12
C13
ARCHIVE INFORMATION
Figure 1. MRF6S9060NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S9060NR1(NBR1) Test Circuit Component Designations and Values
Part
B1
B2
C1, C8, C14, C15
C2, C4, C13
C3
C5, C6
C7, C16, C17
C9
C10, C11
C12
C18
C19
L1, L2
R1
R2
R3
R4
Ferrite Bead
Ferrite Bead
47 pF Chip Capacitors
0.8- 8.0 pF Variable Capacitors, Gigatrim
3.0 pF Chip Capacitor
15 pF Chip Capacitors
10
μF,
35 V Tantalum Capacitors
100
μF,
50 V Electrolytic Capacitor
13 pF Chip Capacitors
3.9 pF Chip Capacitor
0.56
μF
Chip Capacitor
470
μF,
63 V Electrolytic Capacitor
12.5 nH Inductor
1 kΩ, 1/4 W Chip Resistor
560 kΩ, 1/4 W Chip Resistor
12
Ω,
1/4 W Chip Resistor
27
W,
1/4 W Chip Resistor
Description
Part Number
2743019447
2743021447
ATC100B470JT500XT
27290
ATC100B3R0JT500XT
ATC100B150JT500XT
T491D106K035AT
MCHT101M1HB- 1017- RH
ATC100B130JT500XT
ATC100B3R9JT500XT
ATC700A561MT150XT
477KXM063M
A04T- 5
CRCW12061001FKEA
CRCW12065600FKEA
CRCW120612R0FKEA
CRCW120627R0FKEA
Manufacturer
Fair- Rite
Fair- Rite
ATC
Johanson
ATC
ATC
Kemet
Multicomp
ATC
ATC
ATC
Illinois Capacitor
Coilcraft
Vishay
Vishay
Vishay
Vishay
MRF6S9060NR1 MRF6S9060NBR1
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.215″ x 0.065″ Microstrip
0.221″ x 0.065″ Microstrip
0.500″ x 0.100″ Microstrip
0.460″ x 0.270″ Microstrip
0.040″ x 0.270″ Microstrip
0.280″ x 0.270″ x 0.530″ Taper
0.087″ x 0.525″ Microstrip
0.435″ x 0.525″ Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
Z15
PCB
0.057″ x 0.525″ Microstrip
0.360″ x 0.270″ Microstrip
0.063″ x 0.270″ Microstrip
0.360″ x 0.065″ Microstrip
0.170″ x 0.065″ Microstrip
0.880″ x 0.065″ Microstrip
0.260″ x 0.065″ Microstrip
Taconic RF - 35 0.030″,
ε
r
= 3.5
C7
R2
B1
R3
C19
V
DD
C16 C17
V
GG
R1
B2
C8
R4
C9
L1
C1
C2
C3
C5
C6
C15
L2
CUT OUT AREA
C11
C10
C18
C12
C13
C14
ARCHIVE INFORMATION
C4
TO−270/272
Surface /
Bolt down
Figure 2. MRF6S9060NR1(NBR1) Test Circuit Component Layout
MRF6S9060NR1 MRF6S9060NBR1
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
