型号
- 型号
- 关键词
Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
厂商名称：Microsemi
厂商官网：https://www.microsemi.com
下载文档| 型号 | MSAER12N50AE3 | MSAFR12N50AE3 | IRF720 | MSAFZ15N40A | MSAEZ15N40A | MSAFX11N80A | MSAFX24N50AE3 |
|---|---|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 | Small Signal Field-Effect Transistor | Small Signal Field-Effect Transistor | Small Signal Field-Effect Transistor | Power Field-Effect Transistor, 24A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, |
| 包装说明 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 | FLANGE MOUNT, R-PSFM-T2 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 |
| Reach Compliance Code | compli | compli | compliant | unknown | unknown | unknown | compliant |
| 最大漏源导通电阻 | 0.4 Ω | 0.4 Ω | 1.8 Ω | 0.3 Ω | 0.3 Ω | 0.95 Ω | 0.23 Ω |
| JESD-30 代码 | R-CBCC-N3 | R-CBCC-N3 | R-PSFM-T2 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 |
| 端子数量 | 3 | 3 | 2 | 3 | 3 | 3 | 3 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | CHIP CARRIER | CHIP CARRIER | FLANGE MOUNT | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
| 表面贴装 | YES | YES | NO | YES | YES | YES | YES |
| 端子形式 | NO LEAD | NO LEAD | THROUGH-HOLE | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子位置 | BOTTOM | BOTTOM | SINGLE | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE | - | - | - | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 500 V | 500 V | 400 V | - | - | - | 500 V |
| 最大漏极电流 (ID) | 12 A | 12 A | 3.3 A | - | - | - | 24 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | - | - | METAL-OXIDE SEMICONDUCTOR |
| 元件数量 | 1 | 1 | 1 | - | - | - | 1 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - | - | - | ENHANCEMENT MODE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | - | - | - | N-CHANNEL |
| 晶体管元件材料 | SILICON | SILICON | SILICON | - | - | - | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | - |
| JESD-609代码 | - | - | e0 | e0 | e0 | e0 | - |
| 认证状态 | - | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - |
| 端子面层 | - | - | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | - |