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MSM54V25632A-12AGBK4

描述:
Synchronous Graphics RAM, 256KX32, 10ns, CMOS, PQFP100, 14 X 20 MM, 0.65 MM PITCH, PLASTIC, QFP-100
分类:
存储    存储   
文件大小:
835KB,共68页
制造商:
概述
Synchronous Graphics RAM, 256KX32, 10ns, CMOS, PQFP100, 14 X 20 MM, 0.65 MM PITCH, PLASTIC, QFP-100
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
LAPIS Semiconductor Co Ltd
零件包装代码
QFP
包装说明
QFP, QFP100,.7X.9
针数
100
Reach Compliance Code
unknown
ECCN代码
EAR99
访问模式
DUAL BANK PAGE BURST
最长访问时间
10 ns
其他特性
AUTO/SELF REFRESH
最大时钟频率 (fCLK)
83 MHz
I/O 类型
COMMON
交错的突发长度
1,2,4,8
JESD-30 代码
R-PQFP-G100
长度
20 mm
内存密度
8388608 bit
内存集成电路类型
SYNCHRONOUS GRAPHICS RAM
内存宽度
32
功能数量
1
端口数量
1
端子数量
100
字数
262144 words
字数代码
256000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
256KX32
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
QFP
封装等效代码
QFP100,.7X.9
封装形状
RECTANGULAR
封装形式
FLATPACK
电源
3.3 V
认证状态
Not Qualified
刷新周期
1024
座面最大高度
3 mm
自我刷新
YES
连续突发长度
1,2,4,8,FP
最大待机电流
0.003 A
最大压摆率
0.24 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子形式
GULL WING
端子节距
0.65 mm
端子位置
QUAD
宽度
14 mm
文档预览
Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008.
Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
http://www.okisemi.com/en/
E2L0068-19-61
¡ Semiconductor
¡ Semiconductor
MSM54V25632A
DESCRIPTION
This version: Jun. 1999
MSM54V25632A
Previous version: Sep. 1998
131,072-Word
¥
32-Bit
¥
2-Bank Synchronous Graphics RAM
The MSM54V25632A is a synchronous graphics random access memory organized as 128 K words
¥
32 bits
¥
2 banks.
This device can operate up to 100 MHz by using synchronous interface. In addition, it has 8-column
Block Write function and Write per bit function which improves performance in graphics
systems.
FEATURES
• 131,072 words
¥
32 bits
¥
2 banks memory
• Single 3.3 V
±0.3
V power supply
• LVTTL compatible inputs and outputs
• All input signals are latched at rising edge of system clock
• Auto precharge and controlled precharge
• Internal pipelined operation: column address can be changed every clock cycle
• Dual internal banks controlled by A9 (Bank Address: BA)
• Independent byte operation via DQM0 to DQM3
• 8-column Block Write function
• Persistent write per bit function
• Programmable burst sequence (Sequential/Interleave)
• Programmable burst length (1, 2, 4, 8 and full page)
• Programmable
CAS
latency (1, 2 and 3)
• Burst stop function (full-page burst)
• Power Down operation and Clock Suspend operation
• Auto refresh and self refresh capability
• 1,024 refresh cycles/16 ms
• Package:
100-pin plastic QFP
(QFP100-P-1420-0.65-BK4)
(Product : MSM54V25632A-xxAGBK4)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM54V25632A-10
MSM54V25632A-12
Clock Frequency
MHz (Max.)
100
83
Package
100-pin Plastic QFP (14
¥
20 mm)
1/66
¡ Semiconductor
PIN CONFIGURATION (TOP VIEW)
100
DQ2
99
V
SS
Q
82
V
SS
Q
81
DQ29
84
DQ31
83
DQ30
98
DQ1
97
DQ0
96
V
CC
95
NC
86
NC
85
V
SS
94
NC
93
NC
92
NC
91
NC
90
NC
89
NC
88
NC
87
NC




DQ3
V
CC
Q
DQ4
DQ5
V
SS
Q
DQ6
DQ7
V
CC
Q
DQ16
DQ17
V
SS
Q
DQ18
DQ19
V
CC
Q
V
CC
V
SS
DQ20
DQ21
V
SS
Q
DQ22
DQ23
V
CC
Q
DQM0
DQM2
WE
CAS
RAS
CS
BA (A9)
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
MSM54V25632A
80
DQ28
79
V
CC
Q
78
DQ27
77
DQ26
76
V
SS
Q
75
DQ25
74
DQ24
73
V
CC
Q
72
DQ15
71
DQ14
70
V
SS
Q
69
DQ13
68
DQ12
67
V
CC
Q
66
V
SS
65
V
CC
64
DQ11
63
DQ10
62
V
SS
Q
61
DQ9
60
DQ8
59
V
CC
Q
58
NC
57
DQM3
56
DQM1
55
CLK
54
CKE
53
DSF
52
NC
51
A8
37
38
39
40
41
42
43
44
45
46
47
48
A0
A1
A2
A3
V
CC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
V
SS
A4
A5
A6
A7
100-Pin Plastic QFP
Pin Name
A0 - A9
A0 - A8
A0 - A7
A9
DQ0 - DQ31
CS
RAS
CAS
WE
Function
Address Inputs
Row Address Inputs
Column Address Inputs
Bank Address
Data Inputs/Outputs
Chip Select
Row Address Strobe
Column Address Strobe
Write Enable
Pin Name
DQM0 - DQM3
DSF
CKE
CLK
V
CC
V
SS
V
CC
Q
V
SS
Q
NC
Function
DQ Mask Enable
Special Function Enable
Clock Enable
System Clock Input
Supply Voltage
Ground
Supply Voltage for DQ
Ground for DQ
No Connection
Note:
The same power supply voltage must be provided to every V
CC
pin and V
CC
Q pin.
The same GND voltage level must be provided to every V
SS
pin and V
SS
Q pin.
2/66
49
50
¡ Semiconductor
MSM54V25632A
BLOCK DIAGRAM
Refresh
Counter
Row Decoders
Timing
Generator
4Mb
Memory Cells
Bank - A
Sense Amplifiers
Column Decoders
Row Decoders
CLK
CKE
CS
RAS
CAS
WE
DSF
V
CC
V
SS
Address Buffers
A0
A1
A2
32
I/O Buffers
DQ0 to 31
A9
4Mb
Memory Cells
Bank - B
Sense Amplifiers
Column Decoders
32
32
DQM0 to 3
Color
Register
(32 bits)
Mask
Register
(32 bits)
3/66
¡ Semiconductor
MSM54V25632A
PIN DESCRIPTION
CLK
CS
CKE
Fetches all inputs at the "H" edge.
Disables or enables device operation by asserting or deactivating all inputs except CLK, CKE,
DQM0, DQM1, DQM2 and DQM3.
Masks system clock to deactivate the subsequent CLK operation.
If CKE is deactivated, system clock will be masked so that the subsequent CLK operation is
deactivated. CKE should be asserted at least one cycle prior to a new command.
Address
Row & column multiplexed.
Row address: RA0 – RA8
Column address: CA0 – CA7
BA (A9)
RAS
CAS
WE
DSF
DQM0 -
DQM3
DQi
DSF is part of the inputs of graphics command of the MSM54V25632A.
If DSF is inactive (Low level), MSM54V25632A operates just like SDRAM.
Masks the read data of two clocks later when DQM0 - DQM3 are set "H" at the "H" edge of the clock signal.
Masks the write data of the same clock when DQM0 - DQM3 are set "H" at the "H" edge of the clock signal.
Data inputs/outputs are multiplexed on the same pin.
1. When
CS
is set "High" at a clock transition from "Low" to "High", all inputs except CLK, CKE, DQM0,
DQM1, DQM2, and DQM3 are invalid.
2. When issuing an active, read or write command, the bank is selected by A9.
Functionality depends on the combination. For details, see the function truth table.
Selects bank to be activated during row address latch time and selects bank for precharge and read/
write during column address latch time. A9 = "L" : Bank A, A9 = "H" : Bank B
*
Notes:
A9
0
1
Active, read or write
Bank A
Bank B
3. The auto precharge function is enabled or disabled by the A8 input when the read or write command is
issued.
A8
0
1
0
1
A9
0
0
1
1
Operation
After the end of burst, bank A holds the active status.
After the end of burst, bank A is precharged automatically.
After the end of burst, bank B holds the active status.
After the end of burst, bank B is precharged automatically.
4. When issuing a precharge command, the bank to be precharged is selected by the A8 and A9 inputs.
A8
0
0
1
A9
0
1
X
Operation
Bank A is precharged.
Bank B is precharged.
Both banks A and B are precharged.
4/66
参数对比
与MSM54V25632A-12AGBK4相近的元器件有:MSM54V25632A-10AGBK4。描述及对比如下:
型号 MSM54V25632A-12AGBK4 MSM54V25632A-10AGBK4
描述 Synchronous Graphics RAM, 256KX32, 10ns, CMOS, PQFP100, 14 X 20 MM, 0.65 MM PITCH, PLASTIC, QFP-100 Synchronous Graphics RAM, 256KX32, 9ns, CMOS, PQFP100, 14 X 20 MM, 0.65 MM PITCH, PLASTIC, QFP-100
是否Rohs认证 不符合 不符合
厂商名称 LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd
零件包装代码 QFP QFP
包装说明 QFP, QFP100,.7X.9 QFP, QFP100,.7X.9
针数 100 100
Reach Compliance Code unknown unknown
ECCN代码 EAR99 EAR99
访问模式 DUAL BANK PAGE BURST DUAL BANK PAGE BURST
最长访问时间 10 ns 9 ns
其他特性 AUTO/SELF REFRESH AUTO/SELF REFRESH
最大时钟频率 (fCLK) 83 MHz 100 MHz
I/O 类型 COMMON COMMON
交错的突发长度 1,2,4,8 1,2,4,8
JESD-30 代码 R-PQFP-G100 R-PQFP-G100
长度 20 mm 20 mm
内存密度 8388608 bit 8388608 bit
内存集成电路类型 SYNCHRONOUS GRAPHICS RAM SYNCHRONOUS GRAPHICS RAM
内存宽度 32 32
功能数量 1 1
端口数量 1 1
端子数量 100 100
字数 262144 words 262144 words
字数代码 256000 256000
工作模式 SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C
组织 256KX32 256KX32
输出特性 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 QFP QFP
封装等效代码 QFP100,.7X.9 QFP100,.7X.9
封装形状 RECTANGULAR RECTANGULAR
封装形式 FLATPACK FLATPACK
电源 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified
刷新周期 1024 1024
座面最大高度 3 mm 3 mm
自我刷新 YES YES
连续突发长度 1,2,4,8,FP 1,2,4,8,FP
最大待机电流 0.003 A 0.003 A
最大压摆率 0.24 mA 0.24 mA
最大供电电压 (Vsup) 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V
表面贴装 YES YES
技术 CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL
端子形式 GULL WING GULL WING
端子节距 0.65 mm 0.65 mm
端子位置 QUAD QUAD
宽度 14 mm 14 mm
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器件捷径:
S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY
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