PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363
PRE-BIASED 数字 晶体管,50V V(BR)CEO,100MA I(C),SOT-363
厂商名称:LRC
厂商官网:http://www.lrc.cn
下载文档型号 | MUN5316DW1T1 | MUN53xxDW1T1 | MUN5333DW1T1 | MUN5332DW1T1 | MUN5331DW1T1 | MUN5315DW1T1 | MUN5313DW1T1 | MUN5312DW1T1 |
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描述 | PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363 | PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363 | PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363 | PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363 | PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363 | PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363 | PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363 | PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363 |
厂商名称 | LRC | - | LRC | LRC | LRC | LRC | LRC | LRC |
Reach Compliance Code | unknown | - | unknow | unknow | unknow | unknow | unknow | unknow |
最大集电极电流 (IC) | 0.1 A | - | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
最小直流电流增益 (hFE) | 160 | - | 80 | 15 | 8 | 160 | 80 | 60 |
元件数量 | 2 | - | 2 | 2 | 2 | 2 | 2 | 2 |
极性/信道类型 | PNP | - | PNP | PNP | PNP | PNP | PNP | PNP |
最大功率耗散 (Abs) | 0.385 W | - | 0.385 W | 0.385 W | 0.385 W | 0.385 W | 0.385 W | 0.385 W |
表面贴装 | YES | - | YES | YES | YES | YES | YES | YES |
晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |