To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
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April 1
st
, 2010
Renesas Electronics Corporation
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DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3511S02
X TO Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure and high associated gain
NF = 0.30 dB TYP., G
a
= 13.5 dB TYP. @ f = 12 GHz
• Micro-X plastic (S02) package
APPLICATIONS
• X to Ku-band DBS LNB
• Other X to Ku-band communication systems
ORDERING INFORMATION
Part Number
NE3511S02-T1C
NE3511S02-T1D
Order Number
NE3511S02-T1C-A
NE3511S02-T1D-A
Package
S02 (Pb-Free)
Quantity
2 kpcs/reel
10 kpcs/reel
Marking
B
Supplying Form
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3511S02
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
G
P
tot
Note
Ratings
4
−3
I
DSS
100
165
+125
−65
to +125
Unit
V
V
mA
μ
A
mW
°C
°C
T
ch
T
stg
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PG10642EJ01V0DS (1st edition)
Date Published October 2006 NS CP(N)
Printed in Japan
2006
NE3511S02
RECOMMENDED OPERATING CONDITIONS (T
A
= +25°C)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
V
DS
I
D
P
in
MIN.
1
5
−
TYP.
2
10
−
MAX.
3
20
0
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Symbol
I
GSO
I
DSS
V
GS (off)
g
m
NF
G
a
V
GS
=
−3
V
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 2 V, I
D
= 100
μ
A
V
DS
= 2 V, I
D
= 10 mA
V
DS
= 2 V, I
D
= 10 mA, f = 12 GHz
Test Conditions
MIN.
−
20
−0.2
50
−
12.5
TYP.
0.5
40
−0.7
65
0.30
13.5
MAX.
10
70
−1.7
−
0.45
−
Unit
μ
A
mA
V
mS
dB
dB
2
Data Sheet PG10642EJ01V0DS
NE3511S02
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
100
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Total Power Dissipation P
tot
(mW)
150
Drain Current I
D
(mA)
200
80
60
V
GS
= 0 V
–0.2
V
20
–0.4
V
–0.6
V
100
40
50
0
50
100
150
200
250
0
1.0
Drain to Source Voltage V
DS
(V)
2.0
Ambient Temperature T
A
(˚C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
80
V
DS
= 2 V
Drain Current I
D
(mA)
60
40
20
0
–2.0
–1.0
Gate to Source Voltage V
GS
(V)
0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
2.0
25
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
1.6
16
14
G
a
12
10
8
6
NF
min
4
2
0
5
10
15
20
0
25
Minimum Noise Figure NF
min
(dB)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
2
4
6
8
10
12
14
Frequency f (GHz)
NF
min
G
a
Associated Gain G
a
(dB)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
15
10
5
0
16 18 20
Drain Current I
D
(mA)
Remark
The graphs indicate nominal characteristics.
Data Sheet PG10642EJ01V0DS
3
Associated Gain G
a
(dB)
20
Minimum Noise Figure NF
min
(dB)
V
DS
= 2 V
I
D
= 10 mA
f = 12 GHz
1.4
V
DS
= 2 V
