NPN SILICON HIGH
FREQUENCY TRANSISTOR
• LOW NOISE FIGURE:
1.2 dB at 1 GHz
1.6 dB at 2 GHz
• HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 8 GHz
NE681 SERIES
SILICON TRANSISTOR
FEATURES
• HIGH ASSOCIATED GAIN:
15 dB at 1 GHz
12 dB at 2 GHz
• LOW COST
Minimum Noise Figure, NF min (dB)
V
CE
= 3 V, I
C
= 5 mA
MSG
20
3.0
MAG
10
Associated Gain, Maximum Stable Gain
and Maximum Available Gain,
GA, MSG, MAG (dB)
ers
mb ot
T E: a r t n u e n
NO g p
ar
gn.
E
et
AS
in
esi
LE
ow tashe ew d
P
oll
n
f
a
for
DESCRIPTION
he thi s d
for ffice
T
ed
om mend ales o
fr
om call s
rec se
le a ls:
P
tai 35
de 81
E6
9R
N
8 13
E6
N
E
B
00 (CHIP)
35 (MICRO-X)
The NE681 series of NPN epitaxial silicon transistors are
designed for low noise, high gain, low cost amplifier applica-
tions. Both the chip and micro-x versions are suitable for
amplifier applications up to 4 GHz. The NE681 die is also
available in six different low cost plastic surface mount pack-
age styles. NE681's unique device characteristics allow you to
use a single matching point to simultaneously achieve both low
noise and high gain.
18 (SOT 343 STYLE)
19 (3 PIN ULTRA
SUPER MINI MOLD)
NOISE FIGURE, GAIN MSG
AND MAG vs. FREQUENCY
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
2.0
NF
G
A
0
1.0
0.5
1.0
2.0
3.0
Frequency, f (GHz)
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 28, 2005
NE681 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at
V
CE
= 8 V, I
C
= 20 mA
V
CE
= 3 V, I
C
= 7 mA
Noise Figure at V
CE
= 8 V, I
C
= 7 mA,
f = 1 GHz
f = 2 GHz
Associated Gain at V
CE
= 8 V, I
C
= 7 mA,
f = 1 GHz
f = 2 GHz
Insertion Power Gain at
V
CE
= 8 V, I
C
= 20 mA, f = 1 GHz
f = 2 GHz
Forward Current Gain
2
at
V
CE
= 8 V, I
C
= 20 mA
V
CE
= 3 V, I
C
= 7 mA
Collector Cutoff Current at
V
CB
= 10 V, I
E
= 0 mA
Emitter Cutoff Current at
V
EB
= 1 V, I
C
= 0 mA
Feedback Capacitance at
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
V
CB
= 10 V, I
E
= 0 mA, f = 1 MHz
Total Power Dissipation
NE68100
00 (CHIP)
UNITS MIN TYP MAX
GHz
GHz
dB
dB
dB
dB
dB
dB
9.0
NE68118
NE68119
NE68130
2SC5012
2SC5007
2SC4227
18
19
30
MIN TYP MAX MIN TYP MAX MIN TYP MAX
9.0
7.0
1.2
1.6
2.3
14
12
17
11
100
250
13
15
9
100
250
80
µA
µA
pF
pF
mW
1.0
1.0
1.0
1.0
0.45
0.2
0.7
80
600
0.25
0.8
833
150
1000
100
833
150
160
1.0
1.0
0.9
0.45
40
240
1.0
1.0
0.9
2.5
1.4
1.8
14
10
14
8
7.0
1.5
1.6
13.5
9
13
7.5
SYMBOLS
f
T
NF
G
NF
|S
21E
|
2
9
50
h
FE
50
I
CBO
I
EBO
C
RE3
R
TH (J-A)
P
T
Thermal Resistance (Junction to Ambient)
°C/W
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
f
T
NF
G
NF
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at V
CE
= 8 V, I
C
= 20 mA
V
CE
= 3 V, I
C
= 7 mA
Noise Figure at V
CE
= 8 V, I
C
= 7 mA, f = 1 GHz
f = 2 GHz
Associated Gain at V
CE
= 8 V, I
C
= 7 mA,
f = 1 GHz
f = 2 GHz
Insertion Power Gain at V
CE
= 8 V, I
C
= 20 mA,
f = 1 GHz
f = 2 GHz
Forward Current Gain
2
at V
CE
= 8 V, I
C
= 20 mA
V
CE
= 3 V, I
C
= 7 mA
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0 mA
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0 mA
Feedback Capacitance at
V
CB
= 10 V, I
E
= 0 mA, f = 1 MHz
Thermal Resistance (Junction to Ambient)
Total Power Dissipation
µA
µA
pF
°C/W
mW
0.35
UNITS
GHz
GHz
dB
dB
dB
dB
dB
dB
50
NE68133
2SC3583
33
MIN
9.0
1.2
2
1.6
13
12
11
12.5
7
250
1.0
1.0
0.9
625
200
0.2
15
8.5
250
1.0
1.0
0.7
590
295
0.25
50
100
200
1.0
1.0
0.8
625
200
2.3
13.5
NE68135
2SC3604
35
9.0
NE68139/39R
2SC4094
39
9.0
1.2
2
TYP MAX MIN
TYP MAX MIN TYP MAX
|S
21E
|
2
9
50
11
100
h
FE
I
CBO
I
EBO
C
RE3
R
TH (J-A)
P
T
100
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed (PW
≤
350 ms, duty cycle
≤
2 %).
3. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
NE681 SERIES
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Operating Junction
Temperature
Storage Temperature
UNITS
V
V
V
mA
°C
°C
RATINGS
20
10
1.5
65
150
2
-55 to +150
3
NE68100
TYPICAL NOISE PARAMETERS
(T
A
= 25°C)
FREQ.
(MHz)
500
1000
2000
4000
NF
OPT
(dB)
1.3
1.45
2.1
3.25
G
A
(dB)
26.42
20.54
14.41
7.76
Γ
OPT
MAG
0.20
0.20
0.22
0.42
ANG
91
148
178
-115
Rn/50
0.20
0.21
0.51
0.85
V
CE
= 8 V, I
C
= 7 mA
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. T
J
for NE68135 and NE68100 is 200°C.
3. Maximum storage temperature for the NE68135 is
-65 to +150°C.
NE68130
TYPICAL NOISE PARAMETERS
(T
A
= 25°C)
FREQ.
(MHz)
NF
OPT
(dB)
1.48
1.90
2.15
2.70
1.10
1.26
1.40
1.80
2.22
2.75
G
A
(dB)
10.23
10.15
9.00
4.46
14.69
12.73
11.29
7.40
6.14
4.89
Γ
OPT
MAG
0.74
0.72
0.69
0.66
0.65
0.60
0.56
0.53
0.47
0.49
ANG
43
79
99
126
45
80
99
123
166
-166
Rn/50
1.35
0.92
0.60
0.38
0.42
0.30
0.24
0.17
0.12
0.08
NE68119
TYPICAL NOISE PARAMETERS
(T
A
= 25°C)
FREQ.
(MHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
0.73
0.74
0.70
0.66
0.59
0.56
0.50
0.49
0.40
0.38
0.39
0.36
0.37
0.31
0.30
0.33
0.32
0.36
0.36
0.28
0.28
0.28
0.28
0.33
0.44
ANG
42
72
90
43
48
89
131
39
68
87
134
165
43
71
89
139
166
-163
39
64
81
130
158
-166
-141
Rn/50
1.70
1.01
0.78
0.46
0.35
0.30
0.16
0.28
0.17
0.14
0.08
0.11
0.20
0.15
0.13
0.09
0.11
0.13
0.22
0.16
0.14
0.11
0.12
0.14
0.16
V
CE
= 2.5 V, I
C
= 0.3 mA
500
800
1000
1500
500
800
1000
1500
2000
2500
V
CE
= 2.5 V, I
C
= 0.3 mA
500
1.24
9.26
800
1000
500
800
1000
1.67
2.18
0.97
1.19
1.31
6.95
6.02
13.86
9.12
10.09
V
CE
= 2.5 V, I
C
= 1 mA
V
CE
= 2.5 V, I
C
= 1 mA
1500
1.71
7.99
V
CE
= 2.5 V, I
C
= 3 mA
500
800
1000
1500
0.92
1.02
1.11
1.42
17.19
14.23
12.78
10.30
8.24
19.00
15.57
13.91
11.25
9.08
7.62
20.30
16.82
15.10
12.35
10.21
8.85
7.86
V
CE
= 2.5 V, I
C
= 3 mA
500
800
1000
1500
2000
2500
1.00
1.06
1.16
1.46
1.80
2.15
17.28
14.35
12.69
9.50
7.70
6.03
0.47
0.44
0.43
0.39
0.35
0.35
44
83
100
130
177
-177
0.25
0.21
0.17
0.12
0.11
0.09
2000
1.82
V
CE
= 3 V, I
C
= 5 mA
500
800
1000
1500
2000
2500
500
800
1000
1500
2000
2500
3000
1.00
1.10
1.19
1.40
1.70
2.05
1.10
1.20
1.30
1.50
1.77
2.10
2.40
V
CE
= 8 V, I
C
= 7mA
500
1000
2000
3000
4000
1.30
1.40
1.80
2.50
3.60
20.34
13.96
8.56
5.64
4.50
0.29
0.25
0.25
0.48
0.67
50
84
155
-167
-135
0.27
0.18
0.16
0.10
0.20
V
CE
= 8 V, I
C
= 7 mA
NE68135
TYPICAL NOISE PARAMETERS
(T
A
= 25°C)
FREQ.
(MHz)
NF
OPT
(dB)
G
A
(dB)
17.33
13.60
9.25
Γ
OPT
MAG
0.28
0.37
0.51
ANG
71
160
-139
Rn/50
0.22
0.15
0.27
V
CE
= 8 V, I
C
= 7 mA
1000
1.1
2000
4000
1.6
3.4
NE681 SERIES
NE68133
TYPICAL NOISE PARAMETERS
(T
A
= 25°C)
FREQ.
(MHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
0.75
0.74
0.68
0.63
0.68
0.63
0.57
0.50
0.44
0.54
0.51
0.46
0.36
0.35
ANG
47
72
88
122
47
70
87
120
168
47
67
86
128
172
Rn/50
1.15
0.97
0.71
0.34
0.42
0.34
0.30
0.17
0.11
0.24
0.20
0.18
0.12
0.10
NE68139
TYPICAL NOISE PARAMETERS
(T
A
= 25°C)
FREQ.
(MHz)
500
800
1000
500
800
1000
1500
NF
OPT
(dB)
1.20
1.45
1.67
0.90
1.10
1.26
1.70
G
A
(dB)
14.10
8.42
8.37
15.71
12.30
11.66
8.85
Γ
OPT
MAG
0.78
0.75
0.68
0.63
0.56
0.53
0.49
0.57
0.45
0.39
0.37
0.35
0.43
0.26
0.16
0.20
0.31
0.53
0.71
ANG
47
72
95
44
72
98
145
178
44
73
99
151
-177
42
133
176
-165
-123
-101
Rn/50
1.28
0.84
0.56
0.43
0.26
0.20
0.12
0.07
0.25
0.19
0.16
0.09
0.07
0.17
0.14
0.09
0.14
0.48
0.90
V
CE
= 2.5 V, I
C
= 0.3 mA
500
1.21
12.45
800
1000
1500
500
800
1000
1500
2000
500
800
1000
1500
2000
1.69
1.95
2.52
.92
1.20
1.35
1.71
2.00
0.86
1.00
1.08
1.25
1.40
7.72
5.96
3.12
14.52
10.57
9.29
6.53
5.53
16.37
12.41
11.07
8.61
6.99
V
CE
= 2.5 V, I
C
= 0.3 mA
V
CE
= 2.5 V, I
C
= 1 mA
V
CE
= 2.5 V, I
C
= 1.0 mA
2000
2.20
7.12
V
CE
= 2.5 V, I
C
= 3 mA
500
800
1000
1500
2000
500
1000
1500
2000
3000
4000
0.88
1.00
1.08
1.30
1.80
1.15
1.25
1.4
1.6
2.15
3.0
18.20
14.62
13.29
10.54
8.60
20.50
15.62
12.49
10.48
8.00
6.81
V
CE
= 2.5 V, I
C
= 3 mA
V
CE
= 8 V, I
C
= 7 mA
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
30
NE68100 & NE68135
INSERTION GAIN vs.
COLLECTOR CURRENT
12
V
CE
= 8 V
f = 2 GHz
Insertion Gain, |S
21E
|
2
(dB)
Maximum Available Gain, MAG (dB)
V
CE
= 8 V
I
C
= 20 mA
|S
21E
|
2
NE68100
MAG NE68135
Insertion Gain, |S
21E
|
2
(dB)
25
10
f = 3 GHz
20
8
f = 4 GHz
6
15
10
NE68133
5
|S
21E
|
2
MAG
4
2
0
0.1
0.2 0.3
0.5 0.7 1
2
3
5 7 10
0
1
2
3
5
7
10
20
30
50
Frequency, f (GHz)
Collector Current, I
C
(mA)
NE681 SERIES
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
DC POWER DERATING CURVES
COLLECTOR TO BASE CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Collector to Base Capacitance, C
OB (
pF)
400
5.0
Total Power Dissipation, P
T
(mW)
3.0
2.0
300
1.0
0.7
0.5
200
NE68133
100
NE68135
0.3
0.2
NE68133
NE68135
0.1
1
2
3
5
7
10
20
30
50
0
0
50
100
150
200
Ambient Temperature, T
A
(°C)
Collector to Base Voltage, V
CB
(V)
FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
500
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
50
Gain Bandwidth Product, f
T
(GHz)
V
CE
= 8 V
DC Forward Current Gain, h
FE
300
200
30
20
V
CE
= 8 V
100
70
50
30
20
10
7
5
3
2
10
1
2
3
5
7
10
20
30
50
1
1
2
3
5
7 10
20
30
50
Collector Current, I
C
(mA)
NE68133
NOISE FIGURE
vs. COLLECTOR CURRENT
3.0
V
CE
= 8 V
f = 1 GHz
2.5
Collector Current, I
C
(mA)
NE68100 & NE68135
NOISE FIGURE
vs. COLLECTOR CURRENT
3.0
V
CE
= 8 V
f = 2 GHz
2.5
Noise Figure, NF (dB)
2.0
Noise Figure, NF (dB)
1
2
3
5
7
10
20
30
50
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0
1
2
3
5
7
10
20
30
50
0
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
嵌入式系统
