To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
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1.
All information included in this document is current as of the date this document is issued. Such information, however, is
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“Standard”:
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3.
4.
5.
6.
7.
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9.
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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
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DATA SHEET
NPN SILICON RF TRANSISTOR
NE851M33
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG)
FEATURES
• Low phase distortion, low voltage operation
• Ideal for OSC applications
• 3-pin super lead-less minimold (M33, 0804 PKG) package
<R>
ORDERING INFORMATION
Part Number
NE851M33
NE851M33-T3
Order Number
NE851M33-A
NE851M33-T3-A
Package
3-pin super lead-less
minimold (M33, 0804 PKG)
(Pb-Free)
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 2 (Base) face the perforation side of
the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
9.0
5.5
1.5
100
130
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10343EJ03V0DS (3rd edition)
Date Published January 2008 NS
Printed in Japan
The mark <R> shows major revised points.
2003, 2008
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NE851M33
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Reverse Transfer Capacitance
f
T
f
T
⏐S
21e
⏐
⏐S
21e
⏐
NF
C
re
Note 2
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 1 V, I
C
= 5 mA
–
–
100
–
–
120
600
600
145
nA
nA
–
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
3.0
5.0
3.0
4.5
–
–
4.5
6.5
4.0
5.5
1.9
0.6
–
–
–
–
2.5
0.8
GHz
GHz
dB
dB
dB
pF
2
Notes 1.
Pulse measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
E7
100 to 145
2
Data Sheet PU10343EJ03V0DS
NE851M33
<R>
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
250
1.0
f = 1 MHz
0.8
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Total Power Dissipation P
tot
(mW)
200
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
150
130
0.6
100
0.4
50
0.2
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
V
CE
= 1 V
100
10
1
0.1
0.01
0.001
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
Collector Current I
C
(mA)
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Collector Current I
C
(mA)
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
400
μ
A
50
40
30
20
10
360
μ
A
320
μ
A
280
μ
A
240
μ
A
200
μ
A
160
μ
A
120
μ
A
80
μ
A
I
B
= 40
μ
A
0
1
2
3
4
5
6
7
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10343EJ03V0DS
3
