NE900275,NE900275 pdf中文资料,NE900275引脚图,NE900275电路-Datasheet-电子工程世界

参数对比

与NE900275相近的元器件有：NE900000G、NE900200、NE900200G、NE900089A、NE900075、NE900175、NE900100、NE900100G。描述及对比如下：

型号	NE900275	NE900000G	NE900200	NE900200G	NE900089A	NE900075	NE900175	NE900100	NE900100G
描述	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
厂商名称	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs
包装说明	FLANGE MOUNT, R-CDFM-F2	UNCASED CHIP, R-XUUC-N3	UNCASED CHIP, R-XUUC-N5	UNCASED CHIP, R-XUUC-N5	MICROWAVE, S-CQMW-F4	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2	UNCASED CHIP, R-XUUC-N5	UNCASED CHIP, R-XUUC-N5
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小漏源击穿电压	20 V	20 V	20 V	20 V	20 V	20 V	20 V	20 V	20 V
最大漏极电流 (ID)	0.6 A	0.15 A	0.6 A	0.6 A	0.15 A	0.15 A	0.3 A	0.3 A	0.3 A
FET 技术	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
最高频带	KU BAND	KU BAND	KU BAND	KU BAND	KU BAND	KU BAND	KU BAND	KU BAND	KU BAND
JESD-30 代码	R-CDFM-F2	R-XUUC-N3	R-XUUC-N5	R-XUUC-N5	S-CQMW-F4	R-CDFM-F2	R-CDFM-F2	R-XUUC-N5	R-XUUC-N5
元件数量	1	1	1	1	1	1	1	1	1
端子数量	2	3	5	5	4	2	2	5	5
工作模式	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
封装主体材料	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	UNSPECIFIED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	SQUARE	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	MICROWAVE	FLANGE MOUNT	FLANGE MOUNT	UNCASED CHIP	UNCASED CHIP
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	FLAT	NO LEAD	NO LEAD	NO LEAD	FLAT	FLAT	FLAT	NO LEAD	NO LEAD
端子位置	DUAL	UPPER	UPPER	UPPER	QUAD	DUAL	DUAL	UPPER	UPPER
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE