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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP36N055HHE, NP36N055IHE, NP36N055SHE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-Channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP36N055HHE
NP36N055IHE
Note
PACKAGE
TO-251 (JEITA) / MP-3
TO-252 (JEITA) / MP-3Z
TO-252 (JEDEC) / MP-3ZK
FEATURES
•
Channel temperature 175 degree rated
•
Super low on-state resistance
R
DS(on)
= 14 mΩ MAX. (V
GS
= 10 V, I
D
= 18 A)
•
Low C
iss
: C
iss
= 2300 pF TYP.
•
Built-in gate protection diode
NP36N055SHE
Note
Not for new design.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Note1
(TO-251)
55
±20
±36
±144
1.2
120
36 / 33
12 / 108
175
–55 to + 175
V
V
A
A
W
W
A
mJ
°C
°C
(TO-252)
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
I
AS
E
AS
T
ch
T
stg
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Single Avalanche Current
Single Avalanche Energy
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
Note2
Note2
2.
Starting T
ch
= 25°C, R
G
= 25
Ω,
V
GS
= 20
→
0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
1.25
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No.
D14152EJ4V0DS00 (4th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1999, 2005
NP36N055HHE, NP36N055IHE, NP36N055SHE
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(th)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
TEST CONDITIONS
V
DS
= 55 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
µ
A
V
DS
= 10 V, I
D
= 18 A
V
GS
= 10 V, I
D
= 18 A
V
DS
= 25 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 28 V, I
D
= 18 A
V
GS
= 10 V
R
G
= 1
Ω
MIN.
TYP.
MAX.
10
±10
UNIT
µ
A
µ
A
V
S
2.0
9
3.0
18
11
2300
370
180
25
16
52
14
4.0
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
14
3500
560
320
54
39
100
35
66
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
V
DD
= 44 V
V
GS
= 10 V
I
D
= 18 A
I
F
= 36 A, V
GS
= 0 V
I
F
= 36 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
44
10
17
1.0
43
64
V
F(S-D)
t
rr
Q
rr
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D14152EJ4V0DS
NP36N055HHE, NP36N055IHE, NP36N055SHE
TYPICAL CHARACTERISTICS (T
A
= 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
140
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
80
60
40
20
0
120
100
80
60
40
20
0
0
25
50
75
100 125 150 175 200
0
25
50
75
100 125 150 175 200
T
C
- Case Temperature - ˚C
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
I
D(pulse)
I
D(DC)
DC
1m
s
PW
T
C
- Case Temperature -
˚C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
E
AS
- Single Avalanche Energy - mJ
108 mJ
100
80
60
40
20 12 mJ
0
25
50
75
100
125
150
175
I
AS
= 33 A
36 A
I
D
- Drain Current - A
100
d
ite V)
Lim10
)
on
=
S(
S
R
D
t V
G
a
(
10
0
=1
µ
s
0
µ
s
10
P
Limowe
ite r D
d is
sip
at
ion
1
T
C
= 25˚C
Single Pulse
1
10
100
0.1
0.1
V
DS
- Drain to Source Voltage - V
Starting T
ch
- Starting Channel Temperature -
˚C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(t) - Transient Thermal Resistance -
˚C/W
1000
R
th(ch-A)
= 125
˚C/W
100
10
1
R
th(ch-C)
= 1.25
˚C/W
0.1
Single Pulse
T
C
= 25˚C
100
µ
1m
10 m
100 m
1
10
100
1000
0.01
10
µ
PW - Pulse Width - s
Data Sheet D14152EJ4V0DS
3
微控制器 MCU
