NP86N04EHE-E2-AY,NP86N04EHE-E2-AY pdf中文资料,NP86N04EHE-E2-AY引脚图,NP86N04EHE-E2-AY电路-Datasheet-电子工程世界

参数对比

与NP86N04EHE-E2-AY相近的元器件有：NP86N04CHE-S12-AZ、2GBJ005_17、NP86N04EHE-E1-AY、NP86N04KHE-E2-AY、NP86N04DHE-S12-AY、NP86N04NHE-S18-AY、NP86N04MHE-S18-AY。描述及对比如下：

型号	NP86N04EHE-E2-AY	NP86N04CHE-S12-AZ	2GBJ005_17	NP86N04EHE-E1-AY	NP86N04KHE-E2-AY	NP86N04DHE-S12-AY	NP86N04NHE-S18-AY	NP86N04MHE-S18-AY
描述	Power Field-Effect Transistor, 86A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZJ, TO-263, 3 PIN	Power Field-Effect Transistor, 86A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, MP-25, TO-220, 3 PIN	GLASS PASSIVATED BRIDGE RECTIFIERS	Power Field-Effect Transistor, 86A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZJ, TO-263, 3 PIN	Power Field-Effect Transistor, 86A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZK, TO-263, 3 PIN	Power Field-Effect Transistor, 86A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, MP-25, TO-262, 3 PIN	Power Field-Effect Transistor, 86A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, MP-25SK, TO-262, 3 PIN	Power Field-Effect Transistor, 86A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, MP-25K, TO-220, 3 PIN
厂商名称	NEC(日电)	NEC(日电)	-	NEC(日电)	NEC(日电)	NEC(日电)	NEC(日电)	NEC(日电)
包装说明	LEAD FREE, MP-25ZJ, TO-263, 3 PIN	LEAD FREE, MP-25, TO-220, 3 PIN	-	LEAD FREE, MP-25ZJ, TO-263, 3 PIN	LEAD FREE, MP-25ZK, TO-263, 3 PIN	LEAD FREE, MP-25, TO-262, 3 PIN	LEAD FREE, MP-25SK, TO-262, 3 PIN	LEAD FREE, MP-25K, TO-220, 3 PIN
Reach Compliance Code	unknown	unknown	-	unknown	unknown	unknown	compliant	compliant
雪崩能效等级（Eas）	580 mJ	580 mJ	-	580 mJ	580 mJ	580 mJ	580 mJ	580 mJ
外壳连接	DRAIN	DRAIN	-	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	40 V	40 V	-	40 V	40 V	40 V	40 V	40 V
最大漏极电流 (ID)	86 A	86 A	-	86 A	86 A	86 A	86 A	86 A
最大漏源导通电阻	0.0044 Ω	0.0044 Ω	-	0.0044 Ω	0.0044 Ω	0.0044 Ω	0.0044 Ω	0.0044 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-263AB	TO-220AB	-	TO-263AB	TO-263AB	TO-262AA	TO-262AA	TO-220AB
JESD-30 代码	R-PSSO-G2	R-PSFM-T3	-	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3	R-PSFM-T3
JESD-609代码	e3	e1	-	e3	e3	e3	e3	e3
元件数量	1	1	-	1	1	1	1	1
端子数量	2	3	-	2	2	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	FLANGE MOUNT	-	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	IN-LINE	FLANGE MOUNT
极性/信道类型	N-CHANNEL	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	344 A	344 A	-	344 A	344 A	344 A	344 A	344 A
认证状态	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	NO	-	YES	YES	NO	NO	NO
端子面层	TIN	TIN SILVER COPPER	-	TIN	TIN	TIN	MATTE TIN	MATTE TIN
端子形式	GULL WING	THROUGH-HOLE	-	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON