(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage and Operating Junction Temperature Range (Note 1)
Symbol
V
RRM
V
RWM
V
R
I
O
I
FRM
I
FSM
T
stg
, T
J
Value
200
Unit
V
2.0
4.0
40
−65 to +175
A
A
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 3)
Symbol
Y
JCL
R
qJA
R
qJA
Value
23
85
330
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 4)
(I
F
= 1.0 A, T
J
= 25°C)
(I
F
= 2.0 A, T
J
= 25°C)
(I
F
= 1.0 A, T
J
= 125°C)
(I
F
= 2.0 A, T
J
= 125°C)
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
Reverse Recovery Time
I
F
= 2.0 A; V
R
= 30 V; dl/dt = 50 A/ms
T
J
= −40°C to 150°C
2. Mounted with 700 mm
2
copper pad size (Approximately 1 in
2
) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm
2
copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width
≤
380
ms,
Duty Cycle
≤
2.0%.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Symbol
V
F
1.0
1.05
0.86
0.90
I
R
0.5
35
t
rr
50
ns
mA
Value
Unit
V
www.onsemi.com
2
NHP220SF, NRVHP220SF
TYPICAL CHARACTERISTICS
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
10
T
A
= 125°C
T
A
= 150°C
10
T
A
= 150°C
1
T
A
= 125°C
0.1
T
A
= 175°C
1
T
A
= 175°C
T
A
= 25°C
0.1
T
A
= 25°C
0.01
T
A
= −40°C
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0.01
T
A
= −40°C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.001
0.001
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1E−03
1E−04
1E−05
1E−06
1E−07
1E−08
1E−09
1E−10
1E−11
0
20
40
60
80
100 120 140 160 180 200
T
A
= −40°C
T
A
= 25°C
T
A
= 125°C
T
A
= 150°C
T
A
= 175°C
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1E−03
T
A
= 175°C
1E−04
1E−05
1E−06
T
A
= 25°C
1E−07
1E−08
T
A
= −40°C
0
20
40
60
80
100 120 140 160 180 200
1E−09
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
T
A
= 125°C
T
A
= 150°C
1E−12
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
1000
C, JUNCTION TEMPERATURE (pF)
T
J
= 25°C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
Figure 4. Maximum Reverse Characteristics
DC
100
Square
Wave
R
qJC
= 23°C/W
20
40
60
80
100
120
140
160 180
10
0
20
40
60
80
100 120 140 160 180
200
V
R
, REVERSE VOLTAGE (V)
T
C
, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
www.onsemi.com
3
NHP220SF, NRVHP220SF
TYPICAL CHARACTERISTICS
3.0
I
PK
/I
AV
= 20
P
F(AV)
, AVERAGE FORWARD
POWER DISSIPATION (W)
2.5
2.0
1.5
DC
1.0
0.5
0
0
0.5
1.0
1.5
2.0
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Square
Wave
I
PK
/I
AV
= 10
T
J
= 175°C
I
PK
/I
AV
= 5
Figure 7. Forward Power Dissipation
1000
50% (DUTY CYCLE)
25%
10%
5.0%
2.0%
1.0%
1.0
100
R(t) (C/W)
10
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 8. Thermal Response, Junction−to−Ambient (20 mm
2
pad)
100
50% (DUTY CYCLE)
25%
10
R(t) (C/W)
10%
5.0%
2.0%
1.0
1.0%
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 9. Thermal Response, Junction−to−Ambient (1 in
2
pad)
www.onsemi.com
4
NHP220SF, NRVHP220SF
PACKAGE DIMENSIONS
SOD−123FL
CASE 498
ISSUE D
E
q
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION
OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.
MILLIMETERS
NOM
MAX
0.95
0.98
0.05
0.10
0.90
1.10
0.15
0.20
1.65
1.80
2.70
2.90
0.75
0.95
3.60
3.80
8°
−
INCHES
NOM
0.037
0.002
0.035
0.006
0.065
0.106
0.030
0.142
−
D
1
2
POLARITY INDICATOR
OPTIONAL AS NEEDED
A1
A
END VIEW
TOP VIEW
q
DIM
A
A1
b
c
D
E
L
H
E
q
MIN
0.90
0.00
0.70
0.10
1.50
2.50
0.55
3.40
0°
MIN
0.035
0.000
0.028
0.004
0.059
0.098
0.022
0.134
0°
MAX
0.039
0.004
0.043
0.008
0.071
0.114
0.037
0.150
8°
H
E
SIDE VIEW
2X
c
RECOMMENDED
SOLDERING FOOTPRINT*
4.20
2X
L
1.25
2X
b
2X
1.22
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
