NTP75N03L09,
NTB75N03L09
Power MOSFET
75 Amps, 30 Volts
N−Channel TO−220 and D
2
PAK
http://onsemi.com
This Logic Level Vertical Power MOSFET is a general purpose part
that provides the “best of design” available today in a low cost power
package. Avalanche energy issues make this part an ideal design in.
The drain−to−source diode has a ideal fast but soft recovery.
Features
75 AMPERES, 30 VOLTS
R
DS(on)
= 8 mW
N−Channel
D
•
•
•
•
•
•
•
•
•
•
•
Ultra−Low R
DS(on)
, Single Base, Advanced Technology
SPICE Parameters Available
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS(on)
Specified at Elevated Temperatures
High Avalanche Energy Specified
ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0
Pb−Free Packages are Available
G
S
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Typical Applications
Power Supplies
Inductive Loads
PWM Motor Controls
Replaces MTP75N03HDL and MTB75N03HDL in Many
Applications
1
TO−220
CASE 221A
STYLE 5
75N
03L09G
AYWW
2
3
1
Gate
2
Drain
4
Drain
4
75N
03L09G
AYWW
3
Source
1
2
3
D
2
PAK
CASE 418AA
STYLE 2
2
1
3
Drain
Gate
Source
75N03L09
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2005
1
August, 2005 − Rev. 7
Publication Order Number:
NTP75N03L09/D
NTP75N03L09, NTB75N03L09
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Drain−to−Gate Voltage
(RGS = 10 MW)
Gate−to−Source Voltage − Continuous
Non−repetitive (tp
≤
10 ms)
Drain Current
− Continuous @ T
C
= 25°C
− Continuous @ T
C
= 100°C
− Single Pulse (tp
≤
10
ms)
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C (Note 1)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche Energy − Starting T
J
= 25°C
(V
DD
= 38 Vdc, V
GS
= 10 Vdc, L = 1 mH, I
L
(pk) = 55 A, V
DS
= 40 Vdc)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
Symbol
V
DSS
V
DGB
V
GS
V
GS
I
D
I
D
I
DM
P
D
Value
30
30
±20
±24
75
59
225
125
1.0
2.5
−55 to 150
1500
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Apk
W
W/°C
W
°C
mJ
T
J
and T
stg
E
AS
R
qJC
R
qJA
R
qJA
T
L
1.0
62.5
50
260
°C/W
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended pad size.
ORDERING INFORMATION
Device
NTP75N03L09
NTP75N03L09G
NTB75N03L09
NTB75N03L09G
NTB75N03L09T4
NTB75N03L09T4G
Package
TO−220
TO−220
(Pb−Free)
D
2
PAK
D
2
PAK
(Pb−Free)
D
2
PAK
D
2
PAK
(Pb−Free)
Shipping
†
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
800 Tape & Reel
800 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
NTP75N03L09, NTB75N03L09
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain −Source Breakdown Voltage (Note 2)
(V
GS
= 0 Vdc, I
D
= 250
mAdc)
Temperature Coefficient (Negative)
Zero Gate Voltage Drain Current
(V
DS
= 30 Vdc, V
GS
= 0 Vdc)
(V
DS
= 30 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
Gate−Body Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage (Note 2)
(V
DS
= V
GS
, I
D
= 250
mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 2)
(V
GS
= 5.0 Vdc, I
D
= 37.5 Adc)
Static Drain−to−Source On Resistance (Note 2)
(V
GS
= 10 Vdc, I
D
= 75 Adc)
(V
GS
= 10 Vdc, I
D
= 37.5 Adc, T
J
= 125°C)
Forward Transconductance (Notes 2 & 4)
DYNAMIC CHARACTERISTICS
(Note 4)
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Notes 3 & 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
GS
= 5.0 Vdc,
I
D
= 75 Adc,
V
DS
= 24 Vdc) (Note 2)
(V
GS
= 5.0 Vdc,
V
DD
= 20 Vdc, I
D
= 75 Adc,
R
G
= 4.7
W)
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 75 Adc, V
GS
= 0 Vdc)
(I
S
= 75 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
(Note 2)
(I
S
= 75 Adc, V
GS
= 0 Vdc
dl
S
/dt = 100 A/ms) (Note 2)
V
SD
−
−
−
−
−
−
1.19
1.09
37
20
17
0.023
1.25
−
−
−
−
−
mC
Vdc
−
−
−
−
−
−
−
16
130
65
105
57
11
34
30
200
110
175
75
15
50
nC
ns
(V
DS
= 25 Vdc, V
GS
= 0,
f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
4398
1160
317
5635
1894
430
pF
(V
DS
= 3 Vdc, I
D
= 20 Adc)
V
GS(th)
1.0
−
R
DS(on)
−
V
DS(on)
−
−
g
FS
−
0.52
0.35
58
0.68
0.50
−
mW
6.5
8.0
Vdc
1.6
−6
2.0
−
Vdc
mV°C
mW
(V
GS
=
±20
Vdc, V
DS
= 0 Vdc)
V
(BR)DSS
30
I
DSS
−
−
I
GSS
−
−
−
−
1.0
10
±100
nAdc
34
−57
−
−
Vdc
mV°C
mAdc
Symbol
Min
Typ
Max
Unit
Reverse Recovery Time
(Note 4)
Reverse Recovery Stored
Charge (Note 4)
t
rr
t
a
t
b
Q
RR
ns
2. Pulse Test: Pulse Width
v
300
mS,
Duty Cycle
v
2%.
3. Switching characteristics are independent of operating junction temperatures.
4. From characterization test data.
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3
NTP75N03L09, NTB75N03L09
120
I
D
, DRAIN CURRENT (AMPS)
150
V
GS
= 3.5 V
I
D
, DRAIN CURRENT (AMPS)
135
120
105
90
75
60
45
30
15
0
0.5
1
1.5
T
J
= 25°C
T
J
= 100°C
T
J
= −55°C
2.5
3
3.5
4
V
DS
≥
10 V
V
GS
= 4 V
V
GS
= 4.5 V
90
60
V
GS
= 5 V
V
GS
= 6 V
V
GS
= 8 V
V
GS
= 10 V
V
GS
= 3 V
30
T
J
= 25°C
V
GS
= 2.5 V
0
0 0.2 0.4 0.6 0.8 1
1.2 1.4 1.6 1.8 2 2.2 2.4 2.6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.0085
0.008
0.0075
0.007
0.0065
0.006
0.0055
0.005
0.0045
0.004
10
20
30
40
50
60
70
80
90 100 120
I
D
, DRAIN CURRENT (AMPS)
T
J
= −55°C
T
J
= 25°C
V
GS
= 5 V
T
J
= 100°C
R
DS(on)
, DRAIN−TO SOURCE RESISTANCE (W)
0.009
T
J
= 25°C
0.008
0.007
V
GS
= 5 V
0.006
V
GS
= 10 V
0.005
0.004
0
20
40
60
80
100
120
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.6
V
GS
= 5.0 V
I
D
= 37.5 A
1.4
I
DSS
, LEAKAGE (nA)
100
1000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 125°C
1.2
T
J
= 100°C
10
1
0.8
0.6
−50
1
−25
0
25
50
75
100
125
150
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation Temperature
Figure 6. Drain−to−Source Leakage Current vs.
Voltage
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4
NTP75N03L09, NTB75N03L09
12000
V
GS
V
DS
10000
C, CAPACITANCE (pF)
8000
6000
4000
C
oss
2000
C
rss
0
10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 22 25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
V
DS
= 0 V
V
GS
= 0 V
T
J
= 25°C
10
30
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
8
V
GS
6
V
DS
Q
T
4
Q
1
Q
2
10
2
Q
3
0
10
20
30
40
50
Q
g
, TOTAL GATE CHARGE (nC)
0
60
I
D
= 75 A
T
J
= 25°C
20
C
iss
0
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
t
r
I
S
, SOURCE CURRENT (AMPS)
t
f
100
t
d(off)
t
d(on)
T
J
= 25°C
I
D
= 75 A
1
2.2
4.7
6.2
9.1
V
DD
= 15 V
V
GS
= 5 V
10
20
10
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
0.0
V
GS
= 0 V
T
J
= 25°C
t, TIME (ns)
0.2
0.4
0.6
0.8
1.0
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1600
1400
1200
1000
800
600
400
200
0
25
50
75
100
Figure 10. Diode Forward Voltage vs. Current
I
D
= 75 A
125
150
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
工控电子
