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NTB75N03RT4

75A, 25V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418AA-01, D2PAK-3

器件类别:分立半导体    晶体管   

厂商名称:Rochester Electronics

厂商官网:https://www.rocelec.com/

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器件:NTB75N03RT4

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Rochester Electronics
包装说明
CASE 418AA-01, D2PAK-3
针数
3
制造商包装代码
CASE 418AA-01
Reach Compliance Code
unknow
雪崩能效等级(Eas)
71.7 mJ
外壳连接
DRAIN
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
25 V
最大漏极电流 (ID)
75 A
最大漏源导通电阻
0.013 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JESD-30 代码
R-PSSO-G2
JESD-609代码
e0
湿度敏感等级
1
元件数量
1
端子数量
2
工作模式
ENHANCEMENT MODE
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
240
极性/信道类型
N-CHANNEL
最大脉冲漏极电流 (IDM)
225 A
认证状态
COMMERCIAL
表面贴装
YES
端子面层
TIN LEAD
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
30
晶体管应用
SWITCHING
晶体管元件材料
SILICON
参数对比
与NTB75N03RT4相近的元器件有:NTP75N03R、NTB75N03RG、NTB75N03RT4G、NTP75N03RG、NTB75N03R。描述及对比如下:
型号 NTB75N03RT4 NTP75N03R NTB75N03RG NTB75N03RT4G NTP75N03RG NTB75N03R
描述 75A, 25V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418AA-01, D2PAK-3 75A, 25V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN 75A, 25V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418AA-01, D2PAK-3 75A, 25V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418AA-01, D2PAK-3 75A, 25V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN 75A, 25V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418AA-01, D2PAK-3
是否无铅 含铅 不含铅 含铅 不含铅 不含铅 含铅
是否Rohs认证 不符合 不符合 符合 符合 符合 不符合
包装说明 CASE 418AA-01, D2PAK-3 CASE 221A-09, 3 PIN LEAD FREE, CASE 418AA-01, D2PAK-3 LEAD FREE, CASE 418AA-01, D2PAK-3 CASE 221A-09, 3 PIN CASE 418AA-01, D2PAK-3
针数 3 3 3 3 3 3
制造商包装代码 CASE 418AA-01 CASE 221A-09 CASE 418AA-01 CASE 418AA-01 CASE 221A-09 CASE 418AA-01
Reach Compliance Code unknow unknown unknown unknown unknown unknow
雪崩能效等级(Eas) 71.7 mJ 71.7 mJ 71.7 mJ 71.7 mJ 71.7 mJ 71.7 mJ
外壳连接 DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 25 V 25 V 25 V 25 V 25 V 25 V
最大漏极电流 (ID) 75 A 75 A 75 A 75 A 75 A 75 A
最大漏源导通电阻 0.013 Ω 0.013 Ω 0.013 Ω 0.013 Ω 0.013 Ω 0.013 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PSSO-G2 R-PSFM-T3 R-PSSO-G2 R-PSSO-G2 R-PSFM-T3 R-PSSO-G2
JESD-609代码 e0 e0 e3 e3 e3 e0
湿度敏感等级 1 NOT SPECIFIED 1 NOT SPECIFIED NOT SPECIFIED 1
元件数量 1 1 1 1 1 1
端子数量 2 3 2 2 3 2
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE FLANGE MOUNT SMALL OUTLINE SMALL OUTLINE FLANGE MOUNT SMALL OUTLINE
峰值回流温度(摄氏度) 240 240 260 NOT SPECIFIED 260 235
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
最大脉冲漏极电流 (IDM) 225 A 225 A 225 A 225 A 225 A 225 A
认证状态 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
表面贴装 YES NO YES YES NO YES
端子面层 TIN LEAD TIN LEAD MATTE TIN MATTE TIN MATTE TIN TIN LEAD
端子形式 GULL WING THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE GULL WING
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 30 30 NOT SPECIFIED NOT SPECIFIED 40 NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
厂商名称 Rochester Electronics - Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics
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