NTE263 (NPN) & NTE264 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in
a TO220 type package designed for general purpose amplifier and low–speed switching applications.
Features:
D
High DC Current Gain:
= 2500 Typ (NTE263)
h
FE
= 3500 Typ (NTE264)
D
Collector–Emitter Sustaining Voltage: V
CEO(sus)
= 100V Min
D
Low Collector–Emitter Saturation Voltage:
V
CE(sat)
= 2V Max @ I
C
= 5A
D
Monolithic Construction with Built–In Base–Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Base Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Total Power Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.52W/°C
Total Power Dissipation (T
A
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/°C
Operating Junction Temperature range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.92°C/W
Thermal Resistance, Junction–to–Ambient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
V
CEO(sus)
I
C
= 200mA, I
B
= 0, Note 1
I
CEO
I
CEX
Emitter Cutoff Current
ON Characteristics
(Note 1)
DC Current Gain
h
FE
V
CE(sat)
V
BE(on)
I
C
= 5A, V
CE
= 3V
I
C
= 10A, V
CE
= 3V
Collector–Emitter Saturation Voltage
I
C
= 5A, I
B
= 0.01A
I
C
= 10A, I
B
= 0.1A
Base–Emitter ON Voltage
I
C
= 3A, V
CE
= 3V
I
C
= 10A, V
CE
= 3V
Dynamic Characteristics
Small–Signal Current Gain
Output Capacitance
Small–Signal Current Gain
|h
fe
|
C
ob
h
fe
I
C
= 1A, V
CE
= 5V, f
test
= 1MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
I
C
= 1A, V
CE
= 5V, f = 1kHz
20
–
1000
–
–
–
–
200
–
pF
1000
100
–
–
–
–
–
–
–
–
–
–
20000
–
2
3
2.8
4.5
V
V
V
V
I
EBO
V
CE
= 100V, I
B
= 0
V
CE
= 100V, V
EB(off)
= 1.5V
V
CE
= 100V, V
EB(off)
= 1.5V, T
C
= +125°C
V
BE
= 5V, I
C
= 0
100
–
–
–
–
–
–
–
–
–
–
1.0
300
3
5
V
mA
µA
mA
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
NTE263
.420 (10.67)
Max
C
B
.147 (3.75)
Dia Max
.110 (2.79)
E
.500
(12.7)
Min
.250 (6.35)
Max
NTE264
C
B
Base
.100 (2.54)
Emitter
Collector/Tab
.500
(12.7)
Max
.070 (1.78) Max
E
Microchip MCU
