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OM6531SSV

Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL PACKAGE-7

器件类别：分立半导体    晶体管   

厂商名称：International Rectifier （ Infineon ）

厂商官网：http://www.irf.com/

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
International Rectifier （ Infineon ）
零件包装代码
SIP
包装说明
FLANGE MOUNT, R-MSFM-P7
针数
6
Reach Compliance Code
compliant
其他特性
HIGH SPEED
外壳连接
ISOLATED
最大集电极电流 (IC)
15 A
集电极-发射极最大电压
1000 V
配置
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 代码
R-MSFM-P7
JESD-609代码
e0
元件数量
2
端子数量
7
最高工作温度
150 °C
封装主体材料
METAL
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度（摄氏度）
NOT SPECIFIED
极性/信道类型
N-CHANNEL
认证状态
Not Qualified
表面贴装
NO
端子面层
TIN LEAD
端子形式
PIN/PEG
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
POWER CONTROL
晶体管元件材料
SILICON
标称断开时间 (toff)
500 ns
标称接通时间 (ton)
250 ns
文档预览
OM6531SS
OM6532SS
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC ISOLATED SIP PACKAGE
1000 Volt, 15 Amp, N-Channel IGBT
In A Hermetic Metal Package
FEATURES
•
•
•
•
•
•
•
•
Two Isolated IGBTs In A Hermetic SIP Package
High Input Impedance
Low On-Voltage
High Current Capability
High Switching Speed
Low Tail Current
Available With Free Wheeling Diodes
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This IGBT power transistor features the high switching speeds of a power MOSFET
and the low on-resistance of a bipolar transistor. It is ideally suited for high power
switching applications such as frequency converters for 3Ø motors, UPS and high
power SMPS.
MAXIMUM RATINGS
@ 25°C Unless Specified Otherwise
PART
NUMBER
OM6531SS
OM6532SS
I
C
(Cont.)
@ 90°C, A
15
15
V
(BR)CES
V
1000
1000
V
CE (sat)
(Typ.)
V
4.0
4.0
T
f
(Typ.)
ns
300
300
S-7
q
JC
°C/W
1.50
1.50
P
D
W
85
85
T
J
°C
150
150
3.1
SCHEMATIC
.118
MECHANICAL OUTLINE
1.375
.770
.302
.150 DIA.
2 PLS.
.270
MAX
.040
.275
REF
E
1
K
1
G
1
Output K
2
G
2
C
2
.820
OM6531SS
1 2 3 4 5 6 7
E K G O K G C
.545
.500
MIN.
E
1
K
1
G
1
Output K
2
G
2
C
2
.150
TYP.
.900
± .002
.040 DIA.
7 PLCS.
.145
Pin 1:
Pin 2:
Pin 3:
Pin 4:
Pin 5:
Pin 6:
Pin 7:
Emitter
Kelvin
Gate
Output
Kelvin
Gate
Collector
OM6532SS (with Diodes)
PACKAGE OPTIONS
MOD-PAK
IGBTs are also available in Z-Tab, dual and quad pak styles -
Please call the factory for more information.
4 11 R2
Supersedes 2 07 R1
3.1 - 167
3.1
PRELIMINARY DATA: OM6532SS
IGBT CHARACTERISTICS
Min. Typ. Max. Units Test Conditions
1000
150
700
±100
V
µA
µA
nA
V
CE
= 0
I
C
= 150 µA
V
CE
= Max. Rat., V
GE
= 0
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
C
= 125°C
I
GES
Gate Emitter Leakage
Current
Parameter - ON
V
GE(th)
Gate Threshold Voltage
Saturation Voltage
V
CE(sat)
Collector Emitter
Saturation Voltage
Dynamic
g
fs
C
ies
C
oes
C
res
T
d(on)
t
r
T
d(off)
t
f
T
d(off)
t
f
E
off
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Delay Time
Fall Time
Turn-Off Losses
3.5
1300
100
50
50
200
200
300
200
200
1.1
S
pF
pF
pF
nS
nS
nS
nS
nS
nS
V
CEclamp
= 600 V, I
C
= 10 A
V
GE
= 15 V, R
g
= 3.3
V
CE
= 20 V, I
C
= 10 A
V
GE
= 0
V
CE
= 25 V
f = 1 mHz
V
CC
= 600 V, I
C
= 10 A
V
GE
= 15 V, R
g
= 3.3 ,
T
j
= 125°C
4.0
4.5
V
4.5
3.0
6.5
V
V
V
CE
= V
GE
, I
C
= 700 µA
V
GE
= 15 V, I
C
= 10 A
T
C
= 25°C
V
GE
= 15 V, I
C
= 10 A
T
C
= 125°C
g
fs
C
ies
C
oes
C
res
T
d(on)
t
r
T
d(off)
t
f
T
d(off)
t
f
E
off
V
f
I
r
t
rr
V
CE(sat)
Collector Emitter
V
GE
= ±20 V
V
CE
= 0 V
V
GE(th)
I
GES
Gate Emitter Leakage
Current
Parameter - ON
Gate Threshold Voltage
Saturation Voltage
V
CE(sat)
Collector Emitter
Saturation Voltage
Dynamic
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Delay Time
Fall Time
Turn-Off Losses
Maximum Forward Voltage
Maximum Reverse Current
Reverse Recovery Time
3.5
1300
100
50
50
200
200
300
200
200
1.1
1.85
1.70
500
7.0
50
S
pF
pF
pF
nS
nS
nS
nS
nS
nS
V
CEclamp
= 600 V, I
C
= 10 A
V
GE
= 15 V, R
g
= 3.3
V
CE
= 20 V, I
C
= 10 A
V
GE
= 0
V
CE
= 25 V
f = 1 mHz
V
CC
= 600 V, I
C
= 10 A
V
GE
= 15 V, R
g
= 3.3 ,
T
j
= 125°C
4.0
4.5
V
4.5
3.0
6.5
V
V
V
CE
= V
GE
, I
C
= 700 µA
V
GE
= 15 V, I
C
= 10 A
T
C
= 25°C
V
GE
= 15 V, I
C
= 10 A
T
C
= 125°C
V
CE(sat)
Collector Emitter
±100
nA
I
CES
Parameter - OFF
(see Note 1)
V
(BR)CES
Collector Emitter
Breakdown Voltage
Zero Gate Voltage
Drain Current
150
700
µA
µA
Min. Typ. Max. Units Test Conditions
1000
V
V
CE
= 0
I
C
= 150 µA
V
CE
= Max. Rat., V
GE
= 0
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
C
= 125°C
V
GE
= ±20 V
V
CE
= 0 V
OM6531SS - OM6532SS
PRELIMINARY DATA: OM6531SS
IGBT CHARACTERISTICS
Parameter - OFF
V
(BR)CES
Collector Emitter
Breakdown Voltage
I
CES
Zero Gate Voltage
Drain Current
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Switching-Resistive Load
Switching-Resistive Load
Switching-Inductive Load
Switching-Inductive Load
mWs L = 1 mH, T
j
= 125°C
mWs L = 1 mH, T
j
= 125°C
V
V
µA
mA
nS
I
F
= 30 A, T
C
= 25°C
I
F
= 30 A, T
C
= 150°C
V
R
= 1000 V, T
C
= 25°C
V
R
= 800 V, T
C
= 125°C
I
F
= 1 A, d
i
/ d
t
= -15 A µ/S
V
R
= 30 V, T
j
= 25°C
DIODE CHARACTERISTICS
Note 1: Limited by diode I
r
characteristic.
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参数对比
与OM6531SSV相近的元器件有：OM6531SST、OM6532SSV、OM6532SST。描述及对比如下：
型号 OM6531SSV OM6531SST OM6532SSV OM6532SST
描述 Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL PACKAGE-7 Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL PACKAGE-7 Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL PACKAGE-7 Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL PACKAGE-7
是否无铅 含铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合 不符合
厂商名称 International Rectifier （ Infineon ） International Rectifier （ Infineon ） International Rectifier （ Infineon ） International Rectifier （ Infineon ）
零件包装代码 SIP SIP SIP SIP
包装说明 FLANGE MOUNT, R-MSFM-P7 FLANGE MOUNT, R-MSFM-P7 FLANGE MOUNT, R-MSFM-P7 FLANGE MOUNT, R-MSFM-P7
针数 6 6 6 6
Reach Compliance Code compliant compliant compliant compliant
其他特性 HIGH SPEED HIGH SPEED HIGH SPEED HIGH SPEED
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED
最大集电极电流 (IC) 15 A 15 A 15 A 15 A
集电极-发射极最大电压 1000 V 1000 V 1000 V 1000 V
配置 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 代码 R-MSFM-P7 R-MSFM-P7 R-MSFM-P7 R-MSFM-P7
JESD-609代码 e0 e0 e0 e0
元件数量 2 2 2 2
端子数量 7 7 7 7
最高工作温度 150 °C 150 °C 150 °C 150 °C
封装主体材料 METAL METAL METAL METAL
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO
端子面层 TIN LEAD TIN LEAD TIN LEAD TIN LEAD
端子形式 PIN/PEG PIN/PEG PIN/PEG PIN/PEG
端子位置 SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管应用 POWER CONTROL POWER CONTROL POWER CONTROL POWER CONTROL
晶体管元件材料 SILICON SILICON SILICON SILICON
标称断开时间 (toff) 500 ns 500 ns 500 ns 500 ns
标称接通时间 (ton) 250 ns 250 ns 250 ns 250 ns
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