PDTA113E series
PNP resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
Rev. 05 — 2 September 2009
Product data sheet
1. Product profile
1.1 General description
PNP Resistor-Equipped Transistors (RET).
Table 1.
Product overview
Package
NXP
PDTA113EE
PDTA113EK
PDTA113EM
PDTA113ES
[1]
PDTA113ET
PDTA113EU
[1]
Type number
JEITA
SC-75
SC-59A
SC-101
SC-43A
-
SC-70
JEDEC
-
TO-236
-
TO-92
TO-236AB
-
NPN
complement
PDTC113EE
PDTC113EK
PDTC113EM
PDTC113ES
PDTC113ET
PDTC113EU
SOT416
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
Also available in SOT54A and SOT54 variant packages (see
Section 2)
1.2 Features
I
Built-in bias resistors
I
Simplifies circuit design
I
Reduces component count
I
Reduces pick and place costs
1.3 Applications
I
General purpose switching and
amplification
I
Inverter and interface circuits
I
Circuit drivers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
0.7
0.8
Typ
-
-
1
1
Max
−50
−100
1.3
1.2
Unit
V
mA
kΩ
NXP Semiconductors
PDTA113E series
PNP resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
2. Pinning information
Table 3.
Pin
SOT54
1
2
3
input (base)
output (collector)
GND (emitter)
1
2
3
001aab347
006aaa148
Pinning
Description
Simplified outline
Symbol
2
R1
1
R2
3
SOT54A
1
2
3
input (base)
output (collector)
GND (emitter)
1
2
3
001aab348
006aaa148
2
R1
1
R2
3
SOT54 variant
1
2
3
input (base)
output (collector)
GND (emitter)
1
2
3
001aab447
006aaa148
2
R1
1
R2
3
SOT23, SOT323, SOT346, SOT416
1
2
3
input (base)
GND (emitter)
output (collector)
1
2
006aaa144
sym003
3
R1
3
1
R2
2
SOT883
1
2
3
input (base)
GND (emitter)
output (collector)
1
3
2
Transparent
top view
1
R2
R1
3
2
sym003
PDTA113E_SER_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 2 September 2009
2 of 18
NXP Semiconductors
PDTA113E series
PNP resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
3. Ordering information
Table 4.
Ordering information
Package
Name
PDTA113EE
PDTA113EK
PDTA113EM
PDTA113ES
[1]
PDTA113ET
PDTA113EU
[1]
Type number
Description
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
leadless ultra small plastic package; 3 solder lands;
body 1.0
×
0.6
×
0.5 mm
Version
SOT416
SOT346
SOT883
SC-75
SC-59A
SC-101
SC-43A
-
SC-70
plastic single-ended leaded (through hole) package; SOT54
3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
SOT23
SOT323
Also available in SOT54A and SOT54 variant packages (see
Section 2
and
Section 9).
4. Marking
Table 5.
Marking codes
Marking code
[1]
16
17
G4
TA113E
*15
*14
Type number
PDTA113EE
PDTA113EK
PDTA113EM
PDTA113ES
PDTA113ET
PDTA113EU
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PDTA113E_SER_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 2 September 2009
3 of 18
NXP Semiconductors
PDTA113E series
PNP resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
V
I
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
output current (DC)
peak collector current
total power dissipation
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
T
stg
T
j
T
amb
[1]
[2]
[3]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
-
Max
−50
−50
−10
+10
−10
−100
−100
150
250
250
500
250
200
+150
150
+150
Unit
V
V
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
°C
°C
°C
T
amb
≤
25
°C
[1]
[1]
[2][3]
[1]
[1]
[1]
-
-
-
-
-
-
−65
-
−65
storage temperature
junction temperature
ambient temperature
Refer to standard mounting conditions
Reflow soldering is the only recommended soldering method.
Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60
µm
copper strip line.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
[1]
[2]
[3]
Refer to standard mounting conditions.
Reflow soldering is the only recommended soldering method.
Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60
µm
copper strip line.
Conditions
in free air
[1]
[1]
[2][3]
[1]
[1]
[1]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
-
-
-
833
500
500
250
500
625
K/W
K/W
K/W
K/W
K/W
K/W
PDTA113E_SER_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 2 September 2009
4 of 18
NXP Semiconductors
PDTA113E series
PNP resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol
I
CBO
I
CEO
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance
V
CB
=
−10
V; I
E
= i
e
= 0 A;
f = 1 MHz
Conditions
V
CB
=
−50
V; I
E
= 0 A
V
CE
=
−30
V; I
B
= 0 A
V
CE
=
−30
V; I
B
= 0 A;
T
j
= 150
°C
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−5
V; I
C
=
−40
mA
I
C
=
−30
mA; I
B
=
−1.5
mA
V
CE
=
−5
V; I
C
=
−100 µA
V
CE
=
−300
mV; I
C
=
−20
mA
Min
-
-
-
-
30
-
-
−2
0.7
0.8
-
Typ
-
-
-
-
-
-
−1.3
−1.7
1
1
-
Max
−100
−1
−50
−4
-
−150
−0.5
-
1.3
1.2
2
pF
mV
V
V
kΩ
Unit
nA
µA
µA
mA
I
EBO
h
FE
V
CEsat
V
I(off)
V
I(on)
R1
R2/R1
C
c
PDTA113E_SER_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 2 September 2009
5 of 18
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