PDTA123T series
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = open
Rev. 02 — 3 September 2009
Product data sheet
1. Product profile
1.1 General description
PNP Resistor-Equipped Transistors (RET) family.
Table 1.
Product overview
Package
NXP
PDTA123TE
PDTA123TK
PDTA123TM
PDTA123TS
[1]
PDTA123TT
PDTA123TU
[1]
Type number
NPN complement
JEITA
SC-75
SC-59A
SC-101
SC-43A
-
SC-70
JEDEC
-
TO-236
-
TO-92
TO-236AB
-
PDTC123TE
PDTC123TK
PDTC123TM
PDTC123TS
PDTC123TT
PDTC123TU
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
Also available in SOT54A and SOT54 variant packages (see
Section 2)
1.2 Features
I
Built-in bias resistors
I
Simplifies circuit design
I
100 mA output current capability
I
Reduces component count
I
Reduces pick and place costs
1.3 Applications
I
Digital applications
I
Controlling IC inputs
I
Cost-saving alternative for BC857 series
in digital applications
I
Switching loads
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
Conditions
open base
Min
-
-
1.54
Typ
-
-
2.2
Max
−50
−100
2.86
Unit
V
mA
kΩ
NXP Semiconductors
PDTA123T series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
2. Pinning information
Table 3.
Pin
SOT54
1
2
3
input (base)
output (collector)
GND (emitter)
1
2
3
001aab347
006aaa217
R1
Pinning
Description
Simplified outline
Symbol
2
1
3
SOT54A
1
2
3
input (base)
output (collector)
GND (emitter)
1
2
3
001aab348
006aaa217
R1
2
1
3
SOT54 variant
1
2
3
input (base)
output (collector)
GND (emitter)
1
2
3
001aab447
006aaa217
R1
2
1
3
SOT23; SOT323; SOT346; SOT416
1
2
3
input (base)
GND (emitter)
output (collector)
1
1
2
006aaa144
sym009
3
R1
3
2
SOT883
1
2
3
input (base)
GND (emitter)
output (collector)
1
3
2
Transparent
top view
1
R1
3
2
sym009
PDTA123T_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 3 September 2009
2 of 10
NXP Semiconductors
PDTA123T series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
3. Ordering information
Table 4.
Ordering information
Package
Name
PDTA123TE
PDTA123TK
PDTA123TM
PDTA123TS
[1]
PDTA123TT
PDTA123TU
[1]
Type number
Description
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
leadless ultra small plastic package; 3 solder lands;
body 1.0
×
0.6
×
0.5 mm
plastic single-ended leaded (through hole) package;
3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
Version
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
SC-75
SC-59A
SC-101
SC-43A
-
SC-70
Also available in SOT54A and SOT54 variant packages (see
Section 2
and
Section 9)
4. Marking
Table 5.
Marking codes
Marking code
[1]
2A
GA
FA
TA123T
ZL*
*1S
Type number
PDTA123TE
PDTA123TK
PDTA123TM
PDTA123TS
PDTA123TT
PDTA123TU
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PDTA123T_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 3 September 2009
3 of 10
NXP Semiconductors
PDTA123T series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current
peak collector current
total power dissipation
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
T
stg
T
j
T
amb
[1]
[2]
[3]
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
[1]
[2][3]
[1]
[1]
[1]
Min
-
-
-
-
-
Max
−50
−50
−5
−100
−100
Unit
V
V
V
mA
mA
-
-
-
-
-
-
−65
-
−65
150
250
250
500
250
200
+150
150
+150
mW
mW
mW
mW
mW
mW
°C
°C
°C
storage temperature
junction temperature
ambient temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB with 60
µm
copper strip line, standard footprint.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
[1]
[2]
[3]
Conditions
in free air
[1]
[1]
[2][3]
[1]
[1]
[1]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
-
-
-
833
500
500
250
500
625
K/W
K/W
K/W
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB with 60
µm
copper strip line, standard footprint.
PDTA123T_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 3 September 2009
4 of 10
NXP Semiconductors
PDTA123T series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol
I
CBO
I
CEO
Parameter
collector-base cut-off
current
Conditions
V
CB
=
−50
V; I
E
= 0 A
Min
-
-
-
-
30
-
1.54
V
CB
=
−10
V; I
E
= i
e
= 0 A;
f = 1 MHz
-
Typ
-
-
-
-
-
-
2.2
-
Max
−100
−1
−50
−100
-
−150
2.86
3
mV
kΩ
pF
Unit
nA
µA
µA
nA
collector-emitter cut-off V
CE
=
−30
V; I
B
= 0 A
current
V
CE
=
−30
V; I
B
= 0 A;
T
j
= 150
°C
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
bias resistor 1 (input)
collector capacitance
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−5
V; I
C
=
−20
mA
I
C
=
−10
mA; I
B
=
−0.5
mA
I
EBO
h
FE
V
CEsat
R1
C
c
500
h
FE
400
(1)
006aaa691
−1
006aaa692
V
CEsat
(V)
300
(2)
−10
−1
200
(3)
(1)
(2)
(3)
100
0
−10
−1
−1
−10
I
C
(mA)
−10
2
−10
−2
−10
−1
−1
−10
I
C
(mA)
−10
2
V
CE
=
−5
V
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
I
C
/I
B
= 20
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
Fig 1.
DC current gain as a function of collector
current; typical values
Fig 2.
Collector-emitter saturation voltage as a
function of collector current; typical values
PDTA123T_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 3 September 2009
5 of 10
