型号
- 型号
- 关键词
| 型号 | PDTB123ET,235 | PDTB123ET |
|---|---|---|
| 描述 | Small Signal Bipolar Transistor | Small Signal Bipolar Transistor |
| 厂商名称 | Nexperia | Nexperia |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | compliant | compliant |
| 其他特性 | BUILT IN BIAS RESISTANCE RATIO IS 1 | BUILT IN BIAS RESISTANCE RATIO IS 1 |
| 最大集电极电流 (IC) | 0.5 A | 0.5 A |
| 集电极-发射极最大电压 | 50 V | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 40 | 40 |
| JEDEC-95代码 | TO-236AB | TO-236AB |
| JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 |
| 元件数量 | 1 | 1 |
| 端子数量 | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | PNP | PNP |
| 表面贴装 | YES | YES |
| 端子形式 | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL |
| 晶体管应用 | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON |