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PDTC123JM,315

100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
100 mA, 50 V, NPN, 硅, 小信号晶体管

器件类别:分立半导体    晶体管   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

器件标准:

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器件参数
参数名称
属性值
Brand Name
NXP Semiconductor
是否Rohs认证
符合
厂商名称
NXP(恩智浦)
零件包装代码
DFN
包装说明
1.0 X 0.6 MM, 0.5 MM HEIGHT, ULTRA SMALL, PLASTIC, SMD, SC-101, 3 PIN
针数
3
制造商包装代码
SOT883
Reach Compliance Code
compliant
ECCN代码
EAR99
Is Samacsys
N
其他特性
BUILT-IN BIAS RESISTOR RATIO IS 21.36
外壳连接
COLLECTOR
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
50 V
配置
SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
100
JESD-30 代码
R-PBCC-N3
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
CHIP CARRIER
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN
最大功率耗散 (Abs)
0.25 W
认证状态
Not Qualified
表面贴装
YES
端子面层
Tin (Sn)
端子形式
NO LEAD
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
PDTC123J series
NPN resistor-equipped transistors;
R1 = 2.2 k, R2 = 47 k
Rev. 7 — 21 December 2011
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Package
NXP
PDTC123JE
PDTC123JM
PDTC123JT
PDTC123JU
SOT416
SOT883
SOT23
SOT323
JEITA
SC-75
SC-101
-
SC-70
JEDEC
-
-
-
PNP
complement
PDTA123JE
PDTA123JM
PDTA123JU
Package
configuration
ultra small
leadless ultra small
small
very small
Type number
TO-236AB PDTA123JT
1.2 Features and benefits
100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
1.3 Applications
Digital application in automotive and
industrial segments
Control of IC inputs
Cost-saving alternative for BC847/857
series in digital applications
Switching loads
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
1.54
17
Typ
-
-
2.20
21
Max
50
100
2.86
26
Unit
V
mA
k
NXP Semiconductors
PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
input (base)
GND (emitter)
output (collector)
1
2
006aaa144
sym007
Simplified outline
Graphic symbol
SOT23; SOT323; SOT416
3
R1
3
1
R2
2
SOT883
1
2
3
input (base)
GND (emitter)
output (collector)
1
3
2
Transparent
top view
1
R2
R1
3
2
sym007
3. Ordering information
Table 4.
Ordering information
Package
Name
PDTC123JE
PDTC123JM
PDTC123JT
PDTC123JU
SC-75
SC-101
-
SC-70
Description
plastic surface-mounted package; 3 leads
Version
SOT416
Type number
leadless ultra small plastic package; 3 solder lands; SOT883
body 1.0
0.6
0.5 mm
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 3 leads
SOT23
SOT323
4. Marking
Table 5.
Marking codes
Marking code
[1]
28
DW
*25
*49
Type number
PDTC123JE
PDTC123JM
PDTC123JT
PDTC123JU
[1]
* = placeholder for manufacturing site code.
PDTC123J_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 21 December 2011
2 of 17
NXP Semiconductors
PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
V
I
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
output current
peak collector current
total power dissipation
PDTC123JE (SOT416)
PDTC123JM (SOT883)
PDTC123JT (SOT23)
PDTC123JU (SOT323)
T
j
T
amb
T
stg
[1]
[2]
[3]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
Max
50
50
10
+12
5
100
100
150
250
250
200
150
+150
+150
Unit
V
V
V
V
V
mA
mA
mW
mW
mW
mW
C
C
C
single pulse; t
p
1 ms
T
amb
25
C
[1][2]
[2][3]
[1]
[1]
-
-
-
-
-
-
65
65
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB with 70
m
copper strip line, standard footprint.
PDTC123J_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 21 December 2011
3 of 17
NXP Semiconductors
PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
300
P
tot
(mW)
200
(3)
(1)
006aac778
(2)
100
0
-75
-25
25
75
125
175
T
amb
(°C)
(1) SOT23; FR4 PCB, standard footprint
SOT883; FR4 PCB with 70
m
copper strip line, standard footprint
(2) SOT323; FR4 PCB, standard footprint
(3) SOT416; FR4 PCB, standard footprint
Fig 1.
Power derating curves
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
PDTC123JE (SOT416)
PDTC123JM (SOT883)
PDTC123JT (SOT23)
PDTC123JU (SOT323)
[1]
[2]
[3]
Conditions
in free air
[1][2]
[2][3]
[1]
[1]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
830
500
500
625
K/W
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB with 70
m
copper strip line, standard footprint.
PDTC123J_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 21 December 2011
4 of 17
NXP Semiconductors
PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
10
3
duty cycle = 1
Z
th(j-a)
(K/W)
10
2
0.1
0.05
0.02
10
0
0.01
0.75
0.5
0.33
0.2
006aac781
1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTC123JE (SOT416); typical values
006aac782
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, 70
m
copper strip line
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTC123JM (SOT883); typical values
PDTC123J_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 21 December 2011
5 of 17
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参数对比
与PDTC123JM,315相近的元器件有:PDTC123JU,115、PDTC123JT,215、PDTC123JT,235。描述及对比如下:
型号 PDTC123JM,315 PDTC123JU,115 PDTC123JT,215 PDTC123JT,235
描述 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Brand Name NXP Semiconductor NXP Semiconduc NXP Semiconduc NXP Semiconduc
是否Rohs认证 符合 符合 符合 符合
零件包装代码 DFN SC-70 TO-236 TO-236
包装说明 1.0 X 0.6 MM, 0.5 MM HEIGHT, ULTRA SMALL, PLASTIC, SMD, SC-101, 3 PIN SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
针数 3 3 3 3
制造商包装代码 SOT883 SOT323 SOT23 SOT23
Reach Compliance Code compliant compli compli compli
ECCN代码 EAR99 EAR99 EAR99 EAR99
其他特性 BUILT-IN BIAS RESISTOR RATIO IS 21.36 BUILT-IN BIAS RESISTOR RATIO IS 21.37 BUILT-IN BIAS RESISTOR RATIO IS 21.36 BUILT-IN BIAS RESISTOR RATIO IS 21.36
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V
配置 SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 100 100 100 100
JESD-30 代码 R-PBCC-N3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e3 e3 e3 e3
湿度敏感等级 1 1 1 1
元件数量 1 1 1 1
端子数量 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 CHIP CARRIER SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED 260 260 260
极性/信道类型 NPN NPN NPN NPN
最大功率耗散 (Abs) 0.25 W 0.2 W 0.25 W 0.25 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES
端子面层 Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
端子形式 NO LEAD GULL WING GULL WING GULL WING
端子位置 BOTTOM DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED 40 40 40
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1
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