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T4
57
PMN48XP
20 V, 4.1 A P-channel Trench MOSFET
Rev. 1 — 21 April 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Low R
DSon
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; I
D
= -2.4 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-12
-
-
Typ
-
-
-
48
Max
-20
12
-4.1
55
Unit
V
V
A
mΩ
Static characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
D
D
G
S
D
D
drain
drain
gate
source
drain
drain
1
2
3
S
017aaa094
Simplified outline
6
5
4
Graphic symbol
D
G
SOT457 (TSOP6)
NXP Semiconductors
PMN48XP
20 V, 4.1 A P-channel Trench MOSFET
3. Ordering information
Table 3.
Ordering information
Package
Name
PMN48XP
TSOP6
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
Type number
4. Marking
Table 4.
PMN48XP
Marking codes
Marking code
ZV
Type number
5. Limiting values
Table 5.
Symbol
V
DS
V
GS
I
D
I
DM
P
tot
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 µs
T
amb
= 25 °C
T
sp
= 25 °C
T
j
T
amb
T
stg
I
S
[1]
[2]
[2]
[1]
[1]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
= 25 °C
Min
-
-12
-
-
-
-
-
-
-55
-55
-65
T
amb
= 25 °C
[1]
Max
-20
12
-4.1
-2.5
-20
530
1285
6250
150
150
150
-1.4
Unit
V
V
A
A
A
mW
mW
mW
°C
°C
°C
A
junction temperature
ambient temperature
storage temperature
source current
Source-drain diode
-
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PMN48XP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 21 April 2011
2 of 15
NXP Semiconductors
PMN48XP
20 V, 4.1 A P-channel Trench MOSFET
120
P
der
(%)
80
017aaa123
120
I
der
(%)
80
017aaa124
40
40
0
−75
−25
25
75
125
T
j
(°C)
175
0
−75
−25
25
75
125
T
j
(°C)
175
Fig 1.
Normalized total power dissipation as a
function of junction temperature
Fig 2.
Normalized continuous drain current as a
function of junction temperature
PMN48XP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 21 April 2011
3 of 15
NXP Semiconductors
PMN48XP
20 V, 4.1 A P-channel Trench MOSFET
–10
2
I
D
(A)
–10
(1)
(2)
017aaa202
Limit R
DSon
= V
DS
/I
D
–1
(3)
(4)
(5)
–10
–1
(6)
–10
–2
–10
–1
–1
–10
V
DS
(V)
–10
2
I
DM
= single pulse
(1) t
p
= 100 µs
(2) t
p
= 1 ms
(3) t
p
= 10 ms
(4) DC; T
sp
= 25 °C
(5) t
p
= 100 ms
(6) DC; T
amb
= 25 °C; drain mounting pad 6 cm
2
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
PMN48XP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 21 April 2011
4 of 15
