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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D102
PMSTA92
PNP high-voltage transistor
Product data sheet
Supersedes data of 1999 Jun 01
2001 Feb 20
NXP Semiconductors
Product data sheet
PNP high-voltage transistor
FEATURES
•
S-mini package
•
High voltage.
APPLICATIONS
•
Primarily intended for use in telephony and professional
communication equipment.
handbook, halfpage
PMSTA92
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
DESCRIPTION
PNP transistor in a microminiature (SMD) plastic package
intended for surface mounted applications.
MARKING
TYPE NUMBER
PMSTA92
MARKING CODE
tD2
Fig.1
1
Top view
2
MAM048
3
1
2
Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air; note 1
VALUE
625
UNIT
K/W
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−300
−300
−5
−100
−200
−100
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
2001 Feb 20
2
NXP Semiconductors
Product data sheet
PNP high-voltage transistor
CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
V
CB
=
−200
V; I
E
= 0
V
BE
=
−3
V; I
C
= 0
I
C
=
−1
mA; V
CE
=
−10
V
I
C
=
−10
mA; V
CE
=
−10
V
I
C
=
−30
mA; V
CE
=
−10
V
V
CEsat
V
BEsat
C
c
C
e
f
T
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
saturation voltage
saturation voltage
collector-base capacitance
emitter-base capacitance
transition frequency
I
C
=
−20
mA; I
B
=
−2
mA; note 1
I
C
=
−20
mA; I
B
=
−2
mA; note 1
V
CB
=
−20
V; I
E
= i
e
= 0; f = 1 MHz
V
EB
=
−5
V; I
C
= i
c
= 0; f = 1 MHz
V
CE
=
−20
V; I
C
=
−10
mA;
f = 100 MHz
MIN.
−
−
40
40
30
−
−
−
−
50
TYP.
−
−
−
−
−
−
−
1.9
20
−
PMSTA92
MAX.
−100
−100
−
−
−
−250
−900
3.5
−
−
UNIT
nA
nA
mV
mV
pF
pF
MHz
2001 Feb 20
3
NXP Semiconductors
Product data sheet
PNP high-voltage transistor
PACKAGE OUTLINE
PMSTA92
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
EIAJ
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
2001 Feb 20
4
