PXFC191507FC
Thermally-Enhanced High Power RF LDMOS FET
150 W, 28 V, 1805 – 1990 MHz
Description
The PXFC191507FC is a 150-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 1805
to 1990 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flanges. Manufactured with Wolfspeed's advanced LDMOS process,
this device provides excellent thermal performance and superior
reliability.
PXFC191507FC
Package H-37248G-4/2
Features
V
DD
= 28 V, I
DQ
= 960 mA, V
GS
= 2.65 V,
ƒ = 1990 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
Gain
Two-carrier WCDMA Drive-up
•
•
60
50
Efficiency (%)
40
30
20
10
Broadband internal input and output matching
Typical Pulsed CW performance, 1990 MHz, 28 V,
10 µs pulse width, 10% duty cycle, class AB test
- Output power at P
1dB
= 140 W
- Efficiency = 54%
- Gain = 19.5 dB
Typical single-carrier WCDMA performance,
1990 MHz, 28 V, 10 dB PAR @ 0.01% CCDF, Test
Model 1 with 16DPCH
- Output power = 32 W avg
- Efficiency = 34%
- Gain = 20 dB
- ACPR = –31 dBc@ 5 MHz
Capable of handling 10:1 VSWR
@28 V, 150 W
(CW) output power
Integrated ESD protection : Human Body Model,
Class 1C (per JESD22-A114)
Low thermal resistance
Pb-free and RoHS compliant
22
21
20
19
18
17
16
•
Gain (dB)
Efficiency
•
•
•
•
c191507fc_g1
29
33
37
41
45
49
53
0
Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Specifications
(tested in Wolfspeed production test fixture)
V
DD
= 28 V, I
DQ
= 960 mA, P
OUT
= 32 W avg, ƒ
1
= 1980 MHz, ƒ
2
= 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
G
ps
Min
19
29
—
Typ
20.5
31
–33
Max
—
—
–31
Unit
dB
%
dBc
h
D
IMD
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 03, 2018-06-25
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PXFC191507FC
DC Characteristics
(each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
2
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V(
BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.3
—
Typ
—
0.05
—
0.05
2.6
—
Max
—
1
10
—
2.9
1
Unit
V
µA
µA
W
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 26 V, I
DQ
= 960 mA
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 140 W CW)
Symbol
V
DSS
V
GS
V
DD
T
J
T
STG
R
qJC
Value
65
–6 to +10
0 to +32
225
–65 to +150
0.43
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PXFC191507FC V1 R0
PXFC191507FC V1 R250
Order Code
PXFC191507FC-V1-R0
PXFC191507FC-V1-R250
Package Description
H-37248G-4/2, earless flange
H-37248G-4/2, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Rev. 03, 2018-06-25
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PXFC191507FC
Typical Performance
(data taken in a production test fixture)
Two-carrier WCDMA Drive-up
3
-5
-15
V
DD
= 28 V, I
DQ
= 960 mA, V
GS
= 2.65 V,
ƒ = 1990 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
IMD Low
IMD Up
ACPR
Efficiency
V
DD
= 28 V, I
DQ
= 960 mA, V
GS
= 2.65V,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
60
50
Two-carrier WCDMA Drive-up
-10
-20
IMD & ACPR (dBc)
1930 IMDL
1930 IMDU
1960 IMDL
1960 IMDU
1990 IMDL
Efficiency (%)
IMD (dBc)
-25
-35
-45
-55
-65
40
30
20
10
c191507fc_g2
-30
-40
-50
-60
29
33
37
41
45
49
53
0
29
33
37
41
45
49
c191507fc_g3
53
Output Power (dBm)
Output Power (dBm)
Pulsed CW Performance
V
DD
= 28 V, I
DQ
= 960 mA
1930 Gain
1960 Gain
1990 Gain
1930 Eff
1960 Eff
1990 Eff
Gain
22
21
60
50
22
21
V
DD
= 24 V Gain
V
DD
= 28 V Gain
V
DD
= 32 V Gain
V
DD
= 24 V Eff
V
DD
= 28 V Eff
V
DD
= 32 V Eff
I
DQ
= 960 mA, ƒ = 1990 MHz
Pulsed CW Performance
at various V
DD
60
50
40
Gain
Gain (dB)
Gain (dB)
20
19
18
17
40
30
20
10
Efficiency (%)
20
19
18
17
16
Efficiency
c191507fc_g5
30
20
10
0
Efficiency
16
30
35
40
45
50
c191507fc_g4
55
0
27
32
37
42
47
52
57
Output Power (dBm)
Output Power (dBm)
Rev. 03, 2018-06-25
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Efficiency (%)
PXFC191507FC
Typical Performance
(cont.)
Small Signal CW Performance
Gain & Input Return Loss
V
DD
= 28 V, I
DQ
= 960 mA
4
22
21
Gain
0
-5
-10
-15
IRL
20
19
18
17
1800
-20
-25
2100
1850
1900
1950
2000
2050
c191507fc_g6
Frequency (MHz)
Broadband Circuit Impedance
D
Input Return Loss (dB)
Gain (dB)
Z Source
G
S
Z Load
Freq
[MHz]
1930
1960
1990
Z Source
W
R
1.34
1.28
1.25
jX
–4.30
–4.15
–4.04
R
Z Load
W
jX
–3.14
–2.99
–2.86
1.55
1.54
1.52
Load Pull Performance
Main Side Load Pull Performance
– Pulsed CW signal: 100 µs, 10% duty cycle, V
DD
= 28 V, I
DQ
= 960 mA
P
1dB
Max Output Power
Freq
[MHz]
1805
1880
1930
1990
Zs
[
W]
1.00 – j3.39
1.38 – j3.80
1.88 – j4.65
2.85 – j4.62
Zl
[W]
1.36 – j2.81
1.26 – j3.35
1.14 – j3.38
1.31 – j3.40
Gain
[dB]
18.2
17.8
17.6
18.4
P
OUT
[dBm]
52.30
52.10
52.10
52.00
P
OUT
[W]
170
164
162
157
PAE
[%]
58.1
54.7
52.1
56.4
Zl
[W]
2.82 – j2.46
2.48 – j2.33
2.25 – j2.06
1.81 – j2.40
Gain
[dB]
20.4
20.2
20.1
19.9
Max PAE
P
OUT
[dBm]
50.40
50.50
50.20
50.60
P
OUT
[W]
110
112
104
116
PAE
[%]
65.7
64.8
63.7
62.8
Rev. 03, 2018-06-25
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PXFC191507FC
Reference Circuit , 1930 – 1990 MHz
C802
R804
R803
C801
R802
R801
S1
C803
R805
5
(61)
RO4350, .020
(61)
C101
C102
R101
+
S3
S2
C201 C202 C203 C204
C209
V
DD
C211
C104
RF_IN
C103
C212
C213
C214
RF_OUT
V
DD
R102
C106
C105
C205 C206 C207 C208
C210
RO4350, .020
PXFC191507FC_IN_01
Reference circuit assembly diagram (not to scale)
PXFC191507FC_OUT_01
c 1 9 1 5 0 7 f c _ C D _ 0 8 - 2 6 - 2 0 1 4
Rev. 03, 2018-06-25
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
