RD28F3202C3T110,RD28F3202C3T110 pdf中文资料,RD28F3202C3T110引脚图,RD28F3202C3T110电路-Datasheet-电子工程世界

器件参数

参数名称

属性值

厂商名称

Intel(英特尔)

零件包装代码

BGA

包装说明

LFBGA,

针数

Reach Compliance Code

unknown

其他特性

SRAM IS CONFIGURED AS 128 K X 16

JESD-30 代码

R-PBGA-B72

长度

12 mm

内存密度

33554432 bit

内存集成电路类型

MEMORY CIRCUIT

内存宽度

功能数量

端子数量

字数

2097152 words

字数代码

2000000

工作模式

ASYNCHRONOUS

最高工作温度

85 °C

最低工作温度

-40 °C

组织

2MX16

封装主体材料

PLASTIC/EPOXY

封装代码

LFBGA

封装形状

RECTANGULAR

封装形式

GRID ARRAY, LOW PROFILE, FINE PITCH

认证状态

Not Qualified

座面最大高度

1.4 mm

最大供电电压 (Vsup)

3.3 V

最小供电电压 (Vsup)

2.7 V

标称供电电压 (Vsup)

3 V

表面贴装

YES

技术

CMOS

温度等级

INDUSTRIAL

端子形式

BALL

端子节距

0.8 mm

端子位置

BOTTOM

宽度

8 mm

参数对比

与RD28F3202C3T110相近的元器件有：RD28F3204C3B100、RD28F3204C3B110、RD28F3208C3T100、RD28F3208C3T110、RD28F3202C3B110、RD28F3208C3B110。描述及对比如下：

型号	RD28F3202C3T110	RD28F3204C3B100	RD28F3204C3B110	RD28F3208C3T100	RD28F3208C3T110	RD28F3202C3B110	RD28F3208C3B110
描述	Memory Circuit, 2MX16, CMOS, PBGA72, 8 X 12 MM, 1.40 MM HEIGHT, STACK, CSP-72	Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA72, 8 X 12 MM, 1.40 MM HEIGHT, STACK, CSP-72	Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA68, 8 X 14 MM, 1.40 MM HEIGHT, STACK, CSP-68	Memory IC	Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA68, 8 X 14 MM, 1.40 MM HEIGHT, STACK, CSP-68	Memory Circuit, 2MX16, CMOS, PBGA72, 8 X 12 MM, 1.40 MM HEIGHT, STACK, CSP-72	Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA68, 8 X 14 MM, 1.40 MM HEIGHT, STACK, CSP-68
包装说明	LFBGA,	LFBGA, BGA68,8X12,32	LFBGA, BGA68,8X12,32	,	LFBGA, BGA68,8X12,32	LFBGA,	LFBGA, BGA68,8X12,32
Reach Compliance Code	unknown	unknow	unknow	unknown	compliant	unknown	compliant
厂商名称	Intel(英特尔)	-	-	Intel(英特尔)	Intel(英特尔)	Intel(英特尔)	Intel(英特尔)
零件包装代码	BGA	BGA	BGA	-	BGA	BGA	BGA
针数	72	72	68	-	68	72	68
其他特性	SRAM IS CONFIGURED AS 128 K X 16	SRAM IS CONFIGURED AS 256 K X 16	SRAM IS ORGANISED AS 256K X 16	-	SRAM IS ORGANISED AS 512K X 16	SRAM IS CONFIGURED AS 128 K X 16	SRAM IS ORGANISED AS 512K X 16
JESD-30 代码	R-PBGA-B72	R-PBGA-B72	R-PBGA-B68	-	R-PBGA-B68	R-PBGA-B72	R-PBGA-B68
长度	12 mm	12 mm	14 mm	-	14 mm	12 mm	14 mm
内存密度	33554432 bit	33554432 bi	33554432 bi	-	33554432 bit	33554432 bit	33554432 bit
内存集成电路类型	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	-	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT
内存宽度	16	16	16	-	16	16	16
功能数量	1	1	1	-	1	1	1
端子数量	72	72	68	-	68	72	68
字数	2097152 words	2097152 words	2097152 words	-	2097152 words	2097152 words	2097152 words
字数代码	2000000	2000000	2000000	-	2000000	2000000	2000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	-	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-25 °C	-	-25 °C	-40 °C	-25 °C
组织	2MX16	2MX16	2MX16	-	2MX16	2MX16	2MX16
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LFBGA	LFBGA	LFBGA	-	LFBGA	LFBGA	LFBGA
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	-	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
认证状态	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.4 mm	1.4 mm	1.4 mm	-	1.4 mm	1.4 mm	1.4 mm
最大供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	-	3.3 V	3.3 V	3.3 V
最小供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	-	2.7 V	2.7 V	2.7 V
标称供电电压 (Vsup)	3 V	3 V	3 V	-	3 V	3 V	3 V
表面贴装	YES	YES	YES	-	YES	YES	YES
技术	CMOS	CMOS	CMOS	-	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	OTHER	-	OTHER	INDUSTRIAL	OTHER
端子形式	BALL	BALL	BALL	-	BALL	BALL	BALL
端子节距	0.8 mm	0.8 mm	0.8 mm	-	0.8 mm	0.8 mm	0.8 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM
宽度	8 mm	8 mm	8 mm	-	8 mm	8 mm	8 mm
最长访问时间	-	100 ns	110 ns	-	110 ns	-	110 ns
混合内存类型	-	FLASH+SRAM	FLASH+SRAM	-	FLASH+SRAM	-	FLASH+SRAM
封装等效代码	-	BGA68,8X12,32	BGA68,8X12,32	-	BGA68,8X12,32	-	BGA68,8X12,32
电源	-	3 V	3 V	-	3 V	-	3 V
最大待机电流	-	0.000045 A	0.000045 A	-	0.000006 A	-	0.000006 A
最大压摆率	-	0.055 mA	0.055 mA	-	0.055 mA	-	0.055 mA
Base Number Matches	-	1	1	1	1	-	-