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RN2106

Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

器件类别：分立半导体    晶体管   

厂商名称：Toshiba(东芝)

厂商官网：http://toshiba-semicon-storage.com/

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
符合
厂商名称
Toshiba(东芝)
包装说明
2-2H1A, 3 PIN
针数
3
Reach Compliance Code
unknow
ECCN代码
EAR99
其他特性
BUILT-IN RESISTOR RATIO IS 10
最大集电极电流 (IC)
0.1 A
基于收集器的最大容量
6 pF
集电极-发射极最大电压
50 V
配置
SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
80
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
NOT SPECIFIED
极性/信道类型
PNP
最大功率耗散 (Abs)
0.1 W
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
200 MHz
VCEsat-Max
0.3 V
文档预览
RN2101∼RN2106
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2101, RN2102, RN2103,
RN2104, RN2105, RN2106
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Built-in bias resistors
Simplified circuit design
Fewer parts and simplified manufacturing process
Complementary to RN1101~RN1106
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2101~2106
RN2101~2106
RN2101~2104
RN2105, 2106
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
−50
−50
−10
−5
−100
100
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 2.4 mg
―
―
2-2H1A
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
RN2101∼RN2106
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off
current
RN2101~2106
RN2101
RN2102
Emitter cut-off current
RN2103
RN2104
RN2105
RN2106
RN2101
RN2102
DC current gain
RN2103
RN2104
RN2105
RN2106
Collector-emitter
saturation voltage
RN2101~2106
RN2101
RN2102
Input voltage (ON)
RN2103
RN2104
RN2105
RN2106
Input voltage (OFF)
Transition frequency
Collector Output
capacitance
RN2101~2104
RN2105, 2106
RN2101~2106
RN2101~2106
RN2101
RN2102
Input resistor
RN2103
RN2104
RN2105
RN2106
RN2101~2104
Resistor ratio
RN2105
RN2106
R1/R2
―
R1
―
V
I (OFF)
f
T
C
ob
―
―
―
V
CE
=
−5
V,
I
C
=
−0.1
mA
V
CE
=
−10
V,
I
C
=
−5
mA
V
CB
=
−10
V, I
E
= 0,
f = 1 MHz
V
I (ON)
―
V
CE
=
−0.2
V,
I
C
=
−5
mA
V
CE (sat)
―
I
C
=
−5
mA,
I
B
=
−0.25
mA
h
FE
―
V
CE
=
−5
V,
I
C
=
−10
mA
I
EBO
―
V
EB
=
−10
V, I
C
= 0
Symbol
I
CBO
I
CEO
Test
Circuit
―
Test Condition
V
CB
=
−50
V, I
E
= 0
V
CE
=
−50
V, I
B
= 0
Min
―
―
−0.82
−0.38
−0.17
−0.082
V
EB
=
−5
V, I
C
= 0
−0.078
−0.074
30
50
70
80
80
80
―
−1.1
−1.2
−1.3
−1.5
−0.6
−0.7
−1.0
−0.5
―
―
3.29
7
15.4
32.9
1.54
3.29
0.9
Typ.
―
―
―
―
―
―
―
―
―
―
―
―
―
―
−0.1
―
―
―
―
―
―
―
―
200
3
4.7
10
22
47
2.2
4.7
1.0
Max
−100
−500
−1.52
−0.71
−0.33
−0.15
−0.145
−0.138
―
―
―
―
―
―
−0.3
−2.0
−2.4
−3.0
−5.0
−1.1
−1.3
−1.5
−0.8
―
6
6.11
13
28.6
61.1
2.86
6.11
1.1
kΩ
V
MHz
pF
V
V
mA
Unit
nA
0.0421 0.0468 0.0515
0.09
0.1
0.11
2
2007-11-01
RN2101∼RN2106
RN2102
RN2101
RN2103
RN2104
RN2105
RN2106
3
2007-11-01
RN2101∼RN2106
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
4
2007-11-01
RN2101∼RN2106
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
5
2007-11-01
查看更多>
参数对比
与RN2106相近的元器件有：RN2101_07、RN2101、RN2103、RN2102、RN2104、RN2105。描述及对比如下：
型号 RN2106 RN2101_07 RN2101 RN2103 RN2102 RN2104 RN2105
描述 Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
是否无铅 含铅 - 含铅 含铅 含铅 含铅 含铅
是否Rohs认证 符合 - 符合 符合 符合 符合 符合
厂商名称 Toshiba(东芝) - - Toshiba(东芝) Toshiba(东芝) - Toshiba(东芝)
包装说明 2-2H1A, 3 PIN - SMALL OUTLINE, R-PDSO-G3 2-2H1A, 3 PIN 2-2H1A, 3 PIN 2-2H1A, 3 PIN 2-2H1A, 3 PIN
针数 3 - 3 3 3 3 3
Reach Compliance Code unknow - unknow unknow unknow unknow unknow
ECCN代码 EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 BUILT-IN RESISTOR RATIO IS 10 - BUILT-IN RESISTOR RATIO IS 1 BUILT-IN RESISTOR RATIO IS 1 BUILT-IN RESISTOR RATIO IS 1 BUILT-IN RESISTOR RATIO IS 1 BUILT-IN RESISTOR RATIO IS 21.36
最大集电极电流 (IC) 0.1 A - 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
基于收集器的最大容量 6 pF - 6 pF 6 pF 6 pF 6 pF 6 pF
集电极-发射极最大电压 50 V - 50 V 50 V 50 V 50 V 50 V
配置 SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 80 - 30 70 50 80 80
JESD-30 代码 R-PDSO-G3 - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
元件数量 1 - 1 1 1 1 1
端子数量 3 - 3 3 3 3 3
最高工作温度 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度（摄氏度） NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 PNP - PNP PNP PNP PNP PNP
最大功率耗散 (Abs) 0.1 W - 0.1 W 0.1 W 0.1 W 0.1 W 0.1 W
认证状态 Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES - YES YES YES YES YES
端子形式 GULL WING - GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL - DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON - SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 200 MHz - 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz
VCEsat-Max 0.3 V - 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V
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